带电流阻断层的高性能 β-Ga2O3 超级势垒整流器的设计与仿真

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2024-01-18 DOI:10.1088/1361-6641/ad1ccb

Zhenghua Wang, Lei Yuan, Bo Peng, Xinming Xie, Yuming Zhang, Renxu Jia

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引用次数: 0

摘要

本研究提出了一种带电流阻断层的β-Ga2O3 超级势垒整流器（CSBR）。通过 TCAD 仿真研究了它的静态特性、动态特性和浪涌能力。在导通电阻为 3.68 mΩ cm-2 和击穿电压为 2447 V 的情况下，Baliga 的功勋值（BFOM）可达到 1.62 GW cm-2，表现出卓越的性能。首先，该器件的导通和关断由金属氧化物半导体（MOS）结构控制。反向恢复时间为 11.2 ns，与肖特基二极管的反向恢复时间相当。仿真结果表明，电池的尺寸和电池中欧姆接触区的比例是影响反向恢复时间的关键参数。此外，采用双面冷却配置的 CSBR 还具有很强的浪涌能力。它可以承受 5000 A cm-2 的峰值浪涌电流密度，是其正向电流（VForward = 3.0 V）的 10 倍以上。总体而言，所提出的结构具有较高的 BFOM、出色的反向特性和高可靠性，显示了其在高压应用中的潜力。此外，CSBR 还可以嵌入 Ga2O3-MOSFET 中作为一个自由轮二极管。

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Design and simulation of high performance β-Ga2O3 super barrier rectifier with a current blocking layer

In this work, a β-Ga₂O₃ super barrier rectifier with a current blocking layer (CSBR) is proposed. Its static characteristics, dynamic characteristics and surge capability are investigated by TCAD simulation. The Baliga’s figure of merit (BFOM) can reach 1.62 GW cm⁻² with the on-resistance of 3.68 mΩ cm⁻² and the breakdown voltage of 2447 V, exhibiting excellent performance. Foremost, the turn-on and turn-off of the device is controlled by metal-oxide-semiconductor (MOS) structure. The reverse recovery time is 11.2 ns, which is compatible with that of a Schottky diode. Simulation results show that the dimensions of the cells and the proportion of the ohmic contact region in the cells are the key parameters affecting the reverse recovery time. In addition, the CSBR with double-side cooling configuration demonstrates high surge capability. It can sustain a peak surge current density of 5000 A cm⁻², which is more than 10 times its forward current (V _Forward = 3.0 V). Overall, the proposed structure has a high BFOM, excellent reverse characteristics and high reliability, demonstrating its potential in high voltage applications. Moreover, CSBR can be embedded into Ga₂O₃-MOSFET as a free-wheeling diode.

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.