Integrated 2T1C pixel circuit with a-Si TFT and NMOS for active matrix mini-LED displays

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2024-02-07 DOI:10.1088/1361-6641/ad238c

Chenming Zhong, Guangyao Li, Xi Zheng, Lihong Zhu, Jianbang Zhuang, Yijun Lu, Zhong Chen, Weijie Guo

引用次数: 0

Abstract

The 2T1C pixel driver circuit for mini-LED direct display has been proposed, which separates the switching transistor and the driver transistor from the same display substrate, replaces the driver transistor with n-metal oxide semiconductor (NMOS), and combines printed circuit board substrate and thin-film transistor (TFT) substrate to improve the driving capability of the circuit. The NMOS was soldered with mini-LEDs simultaneously onto a substrate which connects to the a-Si TFT array. Two driving modes for a 32-level gray-scale display panel were investigated to compare the voltage-current and optical characteristics. The results demonstrated that the drain-driving mode is better suited for high brightness and high-power display application scenarios as it supports higher-driven currents, but the source-driving mode is more appropriate for precision gray-scale applications due to the higher current linearity of the mode.

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集成 2T1C 像素电路，采用 a-Si TFT 和 NMOS，用于有源矩阵微型 LED 显示器

提出了用于微型 LED 直接显示的 2T1C 像素驱动电路，该电路将开关晶体管和驱动晶体管从同一个显示基板上分离出来，用正金属氧化物半导体（NMOS）取代驱动晶体管，并将印刷电路板基板和薄膜晶体管（TFT）基板结合起来，以提高电路的驱动能力。NMOS 与微型 LED 同时焊接在连接到非晶硅 TFT 阵列的基板上。研究了 32 级灰度显示面板的两种驱动模式，以比较电压-电流和光学特性。结果表明，漏极驱动模式更适合高亮度和高功率显示应用场景，因为它支持更高的驱动电流，但源极驱动模式更适合精密灰度应用，因为该模式的电流线性度更高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.