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Physica Status Solidi (c)最新文献

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The Impact of Na and K on Properties of Cu2ZnSnS4 Thin Films Prepared by Ultrasonic Spray Technique Na和K对超声喷涂Cu2ZnSnS4薄膜性能的影响
Physica Status Solidi (c) Pub Date : 2017-10-24 DOI: 10.1002/PSSC.201700170
M. Sekkati, M. Taibi, G. Schmerber, E. Benamar, M. Regragui, F. C. E. Moursli, C. Leuvrey, Z. Edfouf, Z. Sekkat, A. Dinia, A. Slaoui, M. Abd-lefdil
{"title":"The Impact of Na and K on Properties of Cu2ZnSnS4 Thin Films Prepared by Ultrasonic Spray Technique","authors":"M. Sekkati, M. Taibi, G. Schmerber, E. Benamar, M. Regragui, F. C. E. Moursli, C. Leuvrey, Z. Edfouf, Z. Sekkat, A. Dinia, A. Slaoui, M. Abd-lefdil","doi":"10.1002/PSSC.201700170","DOIUrl":"https://doi.org/10.1002/PSSC.201700170","url":null,"abstract":"CZTS thin films are deposited onto glass and Mo-coated glass substrates by ultrasonic spray technique, followed by a sulfurization under argon atmosphere at 500 °C during 1 h. We have investigated how the addition of the alkali can influence Cu2ZnSnS4 thin films properties. X-ray diffraction and Raman spectroscopy proved that CZTS has the kesterite structure with a preferential orientation along 112. The values of Cu/(Zn+Sn) and (Zn/Sn) ratios, determined by energy dispersive spectroscopy, for undoped CZTS and alkali-doped CZTS are observed to be affected by the alkali doping. The electrical resistivity, for CZTS films deposited on glass substrates, decreased after alkali doping from 9.2 10−1 Ω · cm for undoped CZTS to reach 1.8 10−1 and 4.2 10−1 Ω · cm for 15% content of Na and K, respectively.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84159635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Local Formation of InAs Nanocrystals in Si by Masked Ion Implantation and Flash Lamp Annealing 掩膜离子注入和闪光灯退火在Si中局部形成InAs纳米晶
Physica Status Solidi (c) Pub Date : 2017-10-13 DOI: 10.1002/PSSC.201700188
L. Rebohle, R. Wutzler, S. Prucnal, R. Hübner, Y. Georgiev, A. Erbe, R. Böttger, M. Glaser, A. Lugstein, M. Helm, W. Skorupa
{"title":"Local Formation of InAs Nanocrystals in Si by Masked Ion Implantation and Flash Lamp Annealing","authors":"L. Rebohle, R. Wutzler, S. Prucnal, R. Hübner, Y. Georgiev, A. Erbe, R. Böttger, M. Glaser, A. Lugstein, M. Helm, W. Skorupa","doi":"10.1002/PSSC.201700188","DOIUrl":"https://doi.org/10.1002/PSSC.201700188","url":null,"abstract":"The integration of high-mobility III–V compound semiconductors emerges as a promising route for Si device technologies to overcome the limits of further down-scaling. In this work, we investigate the possibilities to form InAs nanocrystals in a thin Si layer at laterally defined positions with the help of masked ion beam implantation and flash lamp annealing. In detail, a cladding layer was deposited on a silicon-on-insulator (SOI) wafer and patterned by electron beam lithography in order to serve as an implantation mask. The wafer was subsequently implanted with As and In, followed by flash lamp annealing leading to the formation of InAs nanoparticles in the implanted areas. The structures were investigated by Raman spectroscopy, scanning, and transmission electron microscopy as well as energy-dispersive X-ray spectroscopy. Depending on the size of the implantation window, several, one or no nanoparticle is formed. Finally, the perspectives for using this technique for the local modification of Si nanowires are discussed.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77447889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Characterization of CuIn0.7Ga0.3Se2 Thin Films Deposited by Single Stage Thermal Evaporation Process 单段热蒸发沉积CuIn0.7Ga0.3Se2薄膜的表征
Physica Status Solidi (c) Pub Date : 2017-10-09 DOI: 10.1002/PSSC.201700145
H. Karaagac, Elif Peksu, H. Behzad, S. Akgoz, M. Parlak
{"title":"Characterization of CuIn0.7Ga0.3Se2 Thin Films Deposited by Single Stage Thermal Evaporation Process","authors":"H. Karaagac, Elif Peksu, H. Behzad, S. Akgoz, M. Parlak","doi":"10.1002/PSSC.201700145","DOIUrl":"https://doi.org/10.1002/PSSC.201700145","url":null,"abstract":"Single phase CuIn0.7Ga0.3Se2 (CIGS) thin films are successfully deposited on glass substrates via a single stage thermal evaporation from a stoichiometric powder of CIGS. X-ray photoelectron spectroscopy measurements reveal the existence of Cu- and Ga-rich surface of the as-grown CIGS thin films. The post-growth annealing process lead to migration of the metallic atoms from the surface region into the bulk during the crystallization process, which subsequently causes a significant reduction in the reflection and a change in the mechanism of conduction. From the photoconductivity measurements it was deduced that the deposited CIGS films demonstrated a drastic decrease in resistivity under different illumination intensities. The post-growth annealing effect on the morphology and structure of CIGS thin films is investigated by means of the atomic force microscopy and X-ray diffraction measurements, respectively. Results show that there is a significant change in surface roughness as well as in degree of crystallinity of the films following the annealing process at different temperatures.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75053271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD PE-ALD制备n-GaP/p-Si异质结太阳能电池
Physica Status Solidi (c) Pub Date : 2017-10-09 DOI: 10.1002/PSSC.201700150
A. Gudovskikh, A. Uvarov, I. Morozov, A. Baranov, D. Kudryashov, E. Nikitina, J. Kleider
{"title":"n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD","authors":"A. Gudovskikh, A. Uvarov, I. Morozov, A. Baranov, D. Kudryashov, E. Nikitina, J. Kleider","doi":"10.1002/PSSC.201700150","DOIUrl":"https://doi.org/10.1002/PSSC.201700150","url":null,"abstract":"Significant progress in photovoltaic conversion of solar energy can be achieved by new technological approaches that will improve the efficiency of solar cells and make them appropriate for mass production. A new technological approach for the growth of III-V compounds on Si substrates using low temperature plasma-enhanced atomic layer deposition (PE-ALD) is explored in the paper. This technique, which consists of alternatively changing the phosphorus and gallium atom source flows providing the growth of one monolayer by cycle, was developed for the growth of GaP films on Si substrates in a standard PECVD setup at 380 °C using PH3 and TMG (Trimethylgallium) as sources of III and V atoms. First (n)GaP/(p)c-Si anisotype heterojunction solar cell structures fabricated by PE-ALD exhibit open circuit voltage values similar to that obtained for (n)a-Si:H/(p)c-Si heterojunctions fabricated using the same (p)c-Si substrates. However (n)GaP/(p)c-Si solar cells demonstrates a potential to extend a high quantum efficiency in the short wavelength region due to lower absorption losses in the GaP emitter layer.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90321116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Luminescent Downshifting Layers Using Organic Dyes and Quantum Dots 利用有机染料和量子点的发光降移层
Physica Status Solidi (c) Pub Date : 2017-10-01 DOI: 10.1002/PSSC.201700178
Charlène Crevant, C. Lucchesi, M. Paire, J. Guillemoles
{"title":"Luminescent Downshifting Layers Using Organic Dyes and Quantum Dots","authors":"Charlène Crevant, C. Lucchesi, M. Paire, J. Guillemoles","doi":"10.1002/PSSC.201700178","DOIUrl":"https://doi.org/10.1002/PSSC.201700178","url":null,"abstract":"","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"83 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90314123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Cu2O as a Potential Intermediate Transparent Conducting Oxide Layer for Monolithic Perovskite‐CIGSe Tandem Solar Cells Cu2O作为单片钙钛矿- CIGSe串联太阳能电池潜在的中间透明导电氧化层
Physica Status Solidi (c) Pub Date : 2017-10-01 DOI: 10.1002/PSSC.201700164
Yajie Wang, A. Steigert, G. Yin, V. Parvan, R. Klenk, R. Schlatmann, I. Lauermann
{"title":"Cu2O as a Potential Intermediate Transparent Conducting Oxide Layer for Monolithic Perovskite‐CIGSe Tandem Solar Cells","authors":"Yajie Wang, A. Steigert, G. Yin, V. Parvan, R. Klenk, R. Schlatmann, I. Lauermann","doi":"10.1002/PSSC.201700164","DOIUrl":"https://doi.org/10.1002/PSSC.201700164","url":null,"abstract":"","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89938429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Study of Electron Traps Associated With Oxygen Superlattices in n‐Type Silicon n型硅中与氧超晶格相关的电子阱研究
Physica Status Solidi (c) Pub Date : 2017-09-28 DOI: 10.1002/PSSC.201700136
E. Simoen, S. Jayachandran, A. Delabie, M. Caymax, M. Heyns
{"title":"Study of Electron Traps Associated With Oxygen Superlattices in n‐Type Silicon","authors":"E. Simoen, S. Jayachandran, A. Delabie, M. Caymax, M. Heyns","doi":"10.1002/PSSC.201700136","DOIUrl":"https://doi.org/10.1002/PSSC.201700136","url":null,"abstract":"In this paper, the deep levels found by Deep-Level Transient Spectroscopy in Si-O superlattices (SLs) on n-type silicon are reported. Samples have been grown with one, two or five silicon-oxygen layers, separated by 3 nm of silicon. A Cr Schottky barrier (SB) is thermally evaporated on top of the SL. Similar as for p-type silicon, no deep levels have been found for a bias pulse in depletion, while a broad distribution of electron traps shows up when pulsing into forward bias. At the same time, these bands are absent in a zero SL reference sample. Similar as for the p-type results, the trap filling of the electron states exhibits a logarithmic capture. The possible origin of this slow filling will be discussed.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"54 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75956281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Systematic Theoretical Investigations of Polytypism in AlN AlN多型性的系统理论研究
Physica Status Solidi (c) Pub Date : 2017-09-22 DOI: 10.1002/PSSC.201700212
T. Ito, T. Akiyama, K. Nakamura
{"title":"Systematic Theoretical Investigations of Polytypism in AlN","authors":"T. Ito, T. Akiyama, K. Nakamura","doi":"10.1002/PSSC.201700212","DOIUrl":"https://doi.org/10.1002/PSSC.201700212","url":null,"abstract":"Polytypes of AlN in bulk form is systematically investigated using ab initio calculations. The calculated results imply that AlN strongly favors the 2H. However, the energy differences among 3C, 6H, 4H, and 2H structured AlN with Al-vacancy (VAl) and N-vacancy (VN) suggests that 4H becomes competitive with 2H in AlN with VN. Moreover, it is found that Al-rich condition producing VN tends to relatively favor the 4H-AlN, while the 2H-AlN is preferable under N-rich condition suppressing VN formation. This is consistent with experimental results. The stability of graphitic AlN is also discussed in terms of bond order and bond length. These results are compared with those of other III-N compounds such as BN stabilizing graphitic structure, GaN, and InN favoring 2H in terms of ionicity.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"6 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90007380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tailoring Nano-Textures for Optimized Light In-Coupling in Liquid Phase Crystallized Silicon Thin-Film Solar Cells 为优化液相晶体硅薄膜太阳能电池的光耦合定制纳米结构
Physica Status Solidi (c) Pub Date : 2017-09-19 DOI: 10.1002/PSSC.201700175
G. Köppel, D. Eisenhauer, B. Rech, C. Becker
{"title":"Tailoring Nano-Textures for Optimized Light In-Coupling in Liquid Phase Crystallized Silicon Thin-Film Solar Cells","authors":"G. Köppel, D. Eisenhauer, B. Rech, C. Becker","doi":"10.1002/PSSC.201700175","DOIUrl":"https://doi.org/10.1002/PSSC.201700175","url":null,"abstract":"Thin-film solar cells based on liquid phase crystallized silicon (LPC Si) with 8–20 μm thick absorber layers demand for advanced light management to achieve high photocurrent densities. Open-circuit voltages (Voc) >600 mV underline the high silicon material quality of LPC silicon thin-films on nano-textured glass superstrates. We present a 500 nm-pitched sinusoidal nano-texture which outperforms larger pitched gratings with respect to light in-coupling at the buried glass-silicon interface. In the wavelength range of interest reflection of incident light is minimized to values close to 4%, which is the reflection at the sun-facing air-glass interface. Further, the electronic material quality of sinusoidally textured devices is analyzed on basis of a comparison of maximum achieved open-circuit voltages on different texture types. The Voc on sinusoidally textured glass superstrates could be raised to 630 mV by changing the interlayer deposition method from a PVD to a PECVD process. Thus, we are able to unify high optical and electronic properties of silicon absorber layers on sinusoidaly textured glass substrates. These results constitute a crucial step toward fully exploiting the optical potential of LPC silicon thin-film solar cells.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"51 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78902353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Synthesis and Characterization of MnO2 Nanowires: Lattice Vibrations and Photoluminescence Properties 二氧化锰纳米线的合成与表征:晶格振动和光致发光性能
Physica Status Solidi (c) Pub Date : 2017-09-19 DOI: 10.1002/PSSC.201700176
A. M. Toufiq, Fengping Wang, H. U. Shah
{"title":"Synthesis and Characterization of MnO2 Nanowires: Lattice Vibrations and Photoluminescence Properties","authors":"A. M. Toufiq, Fengping Wang, H. U. Shah","doi":"10.1002/PSSC.201700176","DOIUrl":"https://doi.org/10.1002/PSSC.201700176","url":null,"abstract":"In this paper, 1D single-crystalline MnO2 nanowires have been synthesized using facile hydrothermal growth method using KMnO4 and Na2S2O8 as starting reaction reagents. The morphology, phase structure and composition of the as-prepared nanomaterial were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) with selected area electron diffraction (SAED), and energy dispersive X-ray spectroscopy (EDX). FESEM and TEM analysis shows that the as-prepared MnO2 nanowires have diameters of 25–35 nm. The structural features of as-synthesized MnO2 nanowires are studied to analyze the near-neighbor environment of oxygen coordination around manganese cations using Raman scattering (RS) spectroscopy. Photoluminescence Spectrophotometer was employed to study the optical properties of the synthesized material at room temperature which exhibits prominent emission bands located in green-violet spectral region.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"69 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84910952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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