AlN多型性的系统理论研究

T. Ito, T. Akiyama, K. Nakamura
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引用次数: 0

摘要

用从头算系统地研究了块状AlN的多型。计算结果表明AlN强烈倾向于2H。然而,具有al空位(VAl)和n空位(VN)的3C、6H、4H和2H结构AlN之间的能量差异表明,与VN相比,AlN中的4H与2H相互竞争。富al条件下产生VN的倾向于4H-AlN,富n条件下产生VN的倾向于2H-AlN。这与实验结果一致。本文还从键序和键长两个方面讨论了石墨AlN的稳定性。这些结果与其他III-N化合物如BN稳定石墨结构,GaN和InN在离子性方面倾向于2H的结果进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Systematic Theoretical Investigations of Polytypism in AlN
Polytypes of AlN in bulk form is systematically investigated using ab initio calculations. The calculated results imply that AlN strongly favors the 2H. However, the energy differences among 3C, 6H, 4H, and 2H structured AlN with Al-vacancy (VAl) and N-vacancy (VN) suggests that 4H becomes competitive with 2H in AlN with VN. Moreover, it is found that Al-rich condition producing VN tends to relatively favor the 4H-AlN, while the 2H-AlN is preferable under N-rich condition suppressing VN formation. This is consistent with experimental results. The stability of graphitic AlN is also discussed in terms of bond order and bond length. These results are compared with those of other III-N compounds such as BN stabilizing graphitic structure, GaN, and InN favoring 2H in terms of ionicity.
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