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Physica Status Solidi (c)最新文献

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Influence of the magnetron power on the Er-related photoluminescence of AlN:Er films prepared by magnetron sputtering 磁控功率对磁控溅射制备的AlN:Er薄膜Er相关光致发光的影响
Physica Status Solidi (c) Pub Date : 2019-09-13 DOI: 10.1002/pssc.200982606
S. S. Hussain, V. Brien, H. Rinnert, P. Pigeat
{"title":"Influence of the magnetron power on the Er-related photoluminescence of AlN:Er films prepared by magnetron sputtering","authors":"S. S. Hussain, V. Brien, H. Rinnert, P. Pigeat","doi":"10.1002/pssc.200982606","DOIUrl":"https://doi.org/10.1002/pssc.200982606","url":null,"abstract":"The effect of magnetron power on the room temperature 1.54 μm infra-red photoluminescence intensity of erbium doped AlN films grown by r.f. magnetron sputtering, has been studied. The AlN:Er thin films were deposited on (001) Silicon substrates. The study presents relative photoluminescence intensities of nanocrystallized samples prepared with identical sputtering parameters for two erbium doping levels (0.5 and 1.5 at%). The structural evolution of the crystallites as a function of the power is followed by transmission electron microscopy. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"43 1","pages":"72-75"},"PeriodicalIF":0.0,"publicationDate":"2019-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75103149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Ellipsometric and X‐Ray Spectrometric Investigation of Fibrinogen Protein Layers 纤维蛋白原蛋白层的椭圆偏振和X射线光谱研究
Physica Status Solidi (c) Pub Date : 2017-12-01 DOI: 10.1002/PSSC.201700210
B. Kalas, B. Pollakowski, A. Nutsch, C. Streeck, J. Nádor, M. Fried, B. Beckhoff, P. Petrik
{"title":"Ellipsometric and X‐Ray Spectrometric Investigation of Fibrinogen Protein Layers","authors":"B. Kalas, B. Pollakowski, A. Nutsch, C. Streeck, J. Nádor, M. Fried, B. Beckhoff, P. Petrik","doi":"10.1002/PSSC.201700210","DOIUrl":"https://doi.org/10.1002/PSSC.201700210","url":null,"abstract":"","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"185 1","pages":"1700210"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74928175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Strain and Compositional Analysis of (Si)Ge Fin Structures Using High Resolution X‐Ray Diffraction 用高分辨率X射线衍射分析(Si)Ge翅片结构的应变和成分
Physica Status Solidi (c) Pub Date : 2017-12-01 DOI: 10.1002/PSSC.201700156
A. Schulze, R. Loo, L. Witters, H. Mertens, A. Gawlik, N. Horiguchi, N. Collaert, M. Wormington, P. Ryan, W. Vandervorst, M. Caymax
{"title":"Strain and Compositional Analysis of (Si)Ge Fin Structures Using High Resolution X‐Ray Diffraction","authors":"A. Schulze, R. Loo, L. Witters, H. Mertens, A. Gawlik, N. Horiguchi, N. Collaert, M. Wormington, P. Ryan, W. Vandervorst, M. Caymax","doi":"10.1002/PSSC.201700156","DOIUrl":"https://doi.org/10.1002/PSSC.201700156","url":null,"abstract":"","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"83 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72932342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Construction of the Energy Band Diagram of Hydrogen Terminated Diamond and Silicon Nanowires 氢端金刚石和硅纳米线能带图的构建
Physica Status Solidi (c) Pub Date : 2017-12-01 DOI: 10.1002/PSSC.201700152
S. Challinger, I. Baikie, A. G. Birdwell, S. Strehle
{"title":"Construction of the Energy Band Diagram of Hydrogen Terminated Diamond and Silicon Nanowires","authors":"S. Challinger, I. Baikie, A. G. Birdwell, S. Strehle","doi":"10.1002/PSSC.201700152","DOIUrl":"https://doi.org/10.1002/PSSC.201700152","url":null,"abstract":"","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"38 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85557138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Use of Rayleigh-Rice Theory for Analysis of Ellipsometry Data on Rough CIGS Films 用瑞利-赖斯理论分析粗CIGS薄膜的椭偏数据
Physica Status Solidi (c) Pub Date : 2017-12-01 DOI: 10.1002/PSSC.201700217
S. Jensen, D. Rosu, A. Hertwig, P. Hansen
{"title":"Use of Rayleigh-Rice Theory for Analysis of Ellipsometry Data on Rough CIGS Films","authors":"S. Jensen, D. Rosu, A. Hertwig, P. Hansen","doi":"10.1002/PSSC.201700217","DOIUrl":"https://doi.org/10.1002/PSSC.201700217","url":null,"abstract":"Ellipsometry is a useful tool for studying the optical properties of thin films such as photovoltaic devices. We employ Muller matrix ellipsometry to study the thin film photovoltaic material copper indium gallium selenide Cu(In,Ga) Se2 (CIGS), a commercially relevant material with high energy conversion efficiency. Confocal microscopy reveals an rms roughness of 68 nm, which greatly affects the ellipsometry data. Rayleigh-Rice theory is employed to account for the optical properties of the surface roughness in the ellipsometry experiment, and a library search method is used to compare Muller parameters calculated for various CIGS compositions, to the measured data. The Muller parameters calculated with the Rayleigh-Rice model are found to correspond well with the measured data, and a surface roughness of 37nm and a correlation length of 125nm are extracted.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"4 1","pages":"201700217"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74217615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Proceedings of the 2017 E‐MRS Spring Meeting Symposium P Silicon & Silicon Nanostructures: From Recent Fundamental Research to Novel Applications 2017年E - MRS春季会议论文集P硅和硅纳米结构:从最近的基础研究到新的应用
Physica Status Solidi (c) Pub Date : 2017-12-01 DOI: 10.1002/pssc.201720016
{"title":"Proceedings of the 2017 E‐MRS Spring Meeting Symposium P Silicon & Silicon Nanostructures: From Recent Fundamental Research to Novel Applications","authors":"","doi":"10.1002/pssc.201720016","DOIUrl":"https://doi.org/10.1002/pssc.201720016","url":null,"abstract":"","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79847325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanoscale Mapping of Semi‐Crystalline Polypropylene 半结晶聚丙烯的纳米尺度制图
Physica Status Solidi (c) Pub Date : 2017-12-01 DOI: 10.1002/PSSC.201700153
K. Abrams, Q. Wan, Nicola Stehling, C. Jiao, A. Talari, I. Rehman, C. Rodenburg
{"title":"Nanoscale Mapping of Semi‐Crystalline Polypropylene","authors":"K. Abrams, Q. Wan, Nicola Stehling, C. Jiao, A. Talari, I. Rehman, C. Rodenburg","doi":"10.1002/PSSC.201700153","DOIUrl":"https://doi.org/10.1002/PSSC.201700153","url":null,"abstract":"We reveal nanoscale information of semi-crystalline polypropylene with the use of a new secondary electron hyperspectral imaging technique. The innovative combination of cryo-SEM and low voltage allows for the optimized imaging of these beam-sensitive materials. Through the collection of secondary electron hyperspectral imaging data, mapping of molecular order on the nano-scale in the scanning electron microscope (SEM) can be achieved.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76860580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Effect of Cooling Rate on Dopant Spatial Localization and Phase Transformation in Cu‐Doped Y‐Stabilized ZrO2 Nanopowders 冷却速率对Cu掺杂Y稳定ZrO2纳米粉体中掺杂物空间定位和相变的影响
Physica Status Solidi (c) Pub Date : 2017-12-01 DOI: 10.1002/PSSC.201700183
N. Korsunska, M. Baran, I. Vorona, V. Nosenko, S. Lavoryk, Yu. O. Polishchuk, V. Kladko, X. Portier, L. Khomenkova
{"title":"Effect of Cooling Rate on Dopant Spatial Localization and Phase Transformation in Cu‐Doped Y‐Stabilized ZrO2 Nanopowders","authors":"N. Korsunska, M. Baran, I. Vorona, V. Nosenko, S. Lavoryk, Yu. O. Polishchuk, V. Kladko, X. Portier, L. Khomenkova","doi":"10.1002/PSSC.201700183","DOIUrl":"https://doi.org/10.1002/PSSC.201700183","url":null,"abstract":"The effect of calcination temperature (TC = 500–1000 °C) and cooling rate on the dopant distribution in Cu‐doped Y‐stabilized ZrO2 nanopowders is studied. The powders are produced by co‐precipitation technique and investigated by attenuated total reflection, UV‐vis diffuse reflectance, electron paramagnetic resonance, and transmission electron microscopy methods. The cooling rate is found to affect the amount of Cu substances on grain surface, the powders subjected to fast cooling (quenching) showed higher amount of Cu‐related complexes on the grains’ surface than their counterparts cooled with furnace after calcination. It is observed that Cu impurities diffuse inside ZrO2 grains from Cu‐related surface substances when TC   800 °C, outward migration of Cu dopants takes place. Simultaneously, the intensity of 275‐nm absorption band decreases, the monoclinic ZrO2 phase forms and its contribution rises with TC. It is proposed that monoclinic phase formation is caused by the replacement of Cu atoms from lattice sites to interstitials leading to an appearance of the channels for Y out‐diffusion via cation vacancies and destabilization of ZrO2 tetragonal phase.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"14 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87089200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low‐k Spacers for 22 nm FDSOI Technology 用于22nm FDSOI技术的低k间隔器
Physica Status Solidi (c) Pub Date : 2017-12-01 DOI: 10.1002/PSSC.201700196
F. Koehler, Bianca Antonioli, D. Triyoso, H. Tao, K. Hempel
{"title":"Low‐k Spacers for 22 nm FDSOI Technology","authors":"F. Koehler, Bianca Antonioli, D. Triyoso, H. Tao, K. Hempel","doi":"10.1002/PSSC.201700196","DOIUrl":"https://doi.org/10.1002/PSSC.201700196","url":null,"abstract":"","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88924183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Carrier Multiplication in Silicon Nanocrystals:Theoretical Methodologies and Role of the Passivation 硅纳米晶体中的载流子倍增:理论方法和钝化的作用
Physica Status Solidi (c) Pub Date : 2017-12-01 DOI: 10.1002/pssc.201700198
I. Marri, M. Govoni, S. Ossicini
{"title":"Carrier Multiplication in Silicon Nanocrystals:Theoretical Methodologies and Role of the Passivation","authors":"I. Marri, M. Govoni, S. Ossicini","doi":"10.1002/pssc.201700198","DOIUrl":"https://doi.org/10.1002/pssc.201700198","url":null,"abstract":"Carrier multiplication is a non-radiative recombination mechanism that leads to the generation of two or more electron-hole pairs after absorption of a single photon. By reducing the occurrence of dissipative effects, this process can be exploited to increase solar cell performance. In this work we introduce two different theoretical fully ab-initio tools that can be adopted to study carrier multiplication in nanocrystals. The tools are described in detail and compared. Subsequently we calculate carrier multiplication lifetimes in H- and OH- terminated silicon nanocrystals, pointed out the role played by the passivation on the carrier multiplication processes.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"16 1","pages":"1700198-1700198"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75293945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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