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Physica Status Solidi (c)最新文献

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Characterization of Nanometer‐Sized Oxygen Precipitates in Highly B‐Doped Czochralski Silicon 高B掺杂Czochralski硅中纳米级氧沉淀的表征
Physica Status Solidi (c) Pub Date : 2017-12-01 DOI: 10.1002/PSSC.201700161
D. Kot, G. Kissinger, M. Schubert, S. Marschmeyer, G. Schwalb, A. Sattler
{"title":"Characterization of Nanometer‐Sized Oxygen Precipitates in Highly B‐Doped Czochralski Silicon","authors":"D. Kot, G. Kissinger, M. Schubert, S. Marschmeyer, G. Schwalb, A. Sattler","doi":"10.1002/PSSC.201700161","DOIUrl":"https://doi.org/10.1002/PSSC.201700161","url":null,"abstract":"","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73223798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hydrophilic Luminescent Silicon Nanoparticles in Steric Colloidal Solutions: Their Size, Agglomeration, and Toxicity 立体胶体溶液中的亲水发光硅纳米粒子:它们的大小、团聚和毒性
Physica Status Solidi (c) Pub Date : 2017-12-01 DOI: 10.1002/pssc.201700195
K. Herynková, Petra Šimáková, O. Cibulka, A. Fučíková, M. Kalbáčová
{"title":"Hydrophilic Luminescent Silicon Nanoparticles in Steric Colloidal Solutions: Their Size, Agglomeration, and Toxicity","authors":"K. Herynková, Petra Šimáková, O. Cibulka, A. Fučíková, M. Kalbáčová","doi":"10.1002/pssc.201700195","DOIUrl":"https://doi.org/10.1002/pssc.201700195","url":null,"abstract":"","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"2012 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87720151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spatially‐Resolved Spectroscopic Characterization of Reflective and Transparent Materials at a Micro‐Meter Scale Using Coherence Scanning Interferometry 利用相干扫描干涉测量技术在微米尺度上对反射和透明材料进行空间分辨光谱表征
Physica Status Solidi (c) Pub Date : 2017-12-01 DOI: 10.1002/PSSC.201700157
R. Claveau, R. Claveau, P. Montgomery, M. Flury, M. Flury
{"title":"Spatially‐Resolved Spectroscopic Characterization of Reflective and Transparent Materials at a Micro‐Meter Scale Using Coherence Scanning Interferometry","authors":"R. Claveau, R. Claveau, P. Montgomery, M. Flury, M. Flury","doi":"10.1002/PSSC.201700157","DOIUrl":"https://doi.org/10.1002/PSSC.201700157","url":null,"abstract":"The development of new technologies and innovative products today is often accompanied by the emergence of new micro and nanomaterials. Due to their wider use in many applications, performing accurate characterization of these materials is becoming essential. The high performance of coherence scanning interferometry for materials characterization in terms of topographic, roughness and thickness measurements as well as for tomographic analysis of transparent layers has already been well demonstrated. However, demands regarding the spectral characterization of these materials requires new operation modes using the combination of spectral measurements with high resolution imaging. In this work we present a technique for local spectral measurements by careful processing of the entire interferometric signal over the scanned depth at each pixel in the image, so providing spatially resolved measurements in both the lateral and axial directions. Being a far‐field technique, and because the sample is illuminated with a white light source, spectral information is obtained over large areas (150 × 150 μm2) at the same time and for all the wavelengths. Spectroscopic mapping of a sample consisting of four different materials (Si, Al, Ag, Ti) and depth‐resolved measurements performed through a thin layer of PDMS are reported. Spectral measurements are made over an area of about 1–2 μm2, with an axial resolution of 1 μm, these features being dependent on the optical parameters of the system.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"55 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86466570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The Nitrogen Acceptor in 2H‐Polytype Synthetic MoS2: Frequency and Temperature Dependent ESR Analysis 2H多型合成二硫化钼中的氮受体:频率和温度相关ESR分析
Physica Status Solidi (c) Pub Date : 2017-12-01 DOI: 10.1002/PSSC.201700211
B. Schoenaers, A. Stesmans, V. Afanas'ev
{"title":"The Nitrogen Acceptor in 2H‐Polytype Synthetic MoS2: Frequency and Temperature Dependent ESR Analysis","authors":"B. Schoenaers, A. Stesmans, V. Afanas'ev","doi":"10.1002/PSSC.201700211","DOIUrl":"https://doi.org/10.1002/PSSC.201700211","url":null,"abstract":"","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85404082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Scan‐Free Grazing Emission XRF Measurements in the Laboratory Using a CCD 使用CCD的实验室无扫描掠射XRF测量
Physica Status Solidi (c) Pub Date : 2017-12-01 DOI: 10.1002/PSSC.201700158
Veronika Szwedowski, J. Baumann, I. Mantouvalou, Leona J. Bauer, W. Malzer, B. Kanngießer
{"title":"Scan‐Free Grazing Emission XRF Measurements in the Laboratory Using a CCD","authors":"Veronika Szwedowski, J. Baumann, I. Mantouvalou, Leona J. Bauer, W. Malzer, B. Kanngießer","doi":"10.1002/PSSC.201700158","DOIUrl":"https://doi.org/10.1002/PSSC.201700158","url":null,"abstract":"","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"23 1","pages":"1700158"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85504677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Determination of Shape and Sphericity of Silicon Quantum Dots Imaged by EFTEM‐Tomography 用EFTEM -断层成像法测定硅量子点的形状和球形度
Physica Status Solidi (c) Pub Date : 2017-11-06 DOI: 10.1002/PSSC.201700216
D. Hiller, S. Gutsch, J. López-Vidrier, M. Zacharias, S. Estradé, F. Peiró, I. Cruz-Matías, D. Ayala
{"title":"Determination of Shape and Sphericity of Silicon Quantum Dots Imaged by EFTEM‐Tomography","authors":"D. Hiller, S. Gutsch, J. López-Vidrier, M. Zacharias, S. Estradé, F. Peiró, I. Cruz-Matías, D. Ayala","doi":"10.1002/PSSC.201700216","DOIUrl":"https://doi.org/10.1002/PSSC.201700216","url":null,"abstract":"The shape of size-controlled silicon nanocrystals (Si NCs) embedded in SiO2 is investigated by tomographic energy-filtered transmission electron microscopy (EFTEM). The sphericity of the quantum dots is determined by computational analyses. In contrast to other fabrication methods, we demonstrate that the NCs in superlattices are non-agglomerated, individual clusters with slightly oblate spheroidal shape. This allows for low surface-to-volume ratios and thereby low non-radiative defect densities as required by optoelectronic or sensing applications. A near-spherical shape is also a prerequisite for the direct comparison of Si quantum dots (QDs) with theoretical simulations","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"13 1","pages":"1610-1642"},"PeriodicalIF":0.0,"publicationDate":"2017-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87864539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
An innovative ion sensitive device based on side‐contacted field effect diode 一种基于侧接触场效应二极管的新型离子敏感器件
Physica Status Solidi (c) Pub Date : 2017-11-02 DOI: 10.1002/PSSC.201700202
E. Mohammadi, N. Manavizadeh
{"title":"An innovative ion sensitive device based on side‐contacted field effect diode","authors":"E. Mohammadi, N. Manavizadeh","doi":"10.1002/PSSC.201700202","DOIUrl":"https://doi.org/10.1002/PSSC.201700202","url":null,"abstract":"In this paper, side-contacted field effect diode as an ion sensitive device is proposed to take advantages of field effect diodes family in sensing ionic species in solutions. To analyze the behavior of ion sensitive side-contacted field effect diode, an accurate model has been developed in a simulation environment tool to mimic the characteristics of the solution and the results compared with the literature. While dual gate ion sensitive FETs have been introduced to beat the Nernst limit, results show that dual gate ion sensitive side-contacted field effect diodes can provide better performance. Effects of various parameters such as silicon body thickness and doping concentration have been studied. In contrast of ISFETs, the proposed device offers more sensitivity at the thicker silicon body. Results indicate that dual gate ion sensitive side-contacted field effect diodes can be regarded as an interesting candidate for bio-sensing applications.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82353013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Study on Strain Relaxation Distribution in GaN‐Based µLEDs by Kelvin Probe Force Microscopy 用开尔文探针力显微镜研究GaN基微led的应变松弛分布
Physica Status Solidi (c) Pub Date : 2017-11-02 DOI: 10.1002/PSSC.201700222
J. Zhan, Zhizhong Chen, Q. Jiao, Yulong Feng, Chengcheng Li, Yifan Chen, F. Jiao, X. Kang, Shunfeng Li, T. Yu, Guoyi Zhang, B. Shen
{"title":"Study on Strain Relaxation Distribution in GaN‐Based µLEDs by Kelvin Probe Force Microscopy","authors":"J. Zhan, Zhizhong Chen, Q. Jiao, Yulong Feng, Chengcheng Li, Yifan Chen, F. Jiao, X. Kang, Shunfeng Li, T. Yu, Guoyi Zhang, B. Shen","doi":"10.1002/PSSC.201700222","DOIUrl":"https://doi.org/10.1002/PSSC.201700222","url":null,"abstract":"Polarization in InGaN quantum-wells (QWs) is the key issue for GaN-based light emitting diodes (LEDs). Kelvin probe force microscopy (KPFM) is used to detect the strain relaxation distribution on the mesa of micro LEDs (µLEDs). The results of KPFM are analyzed with the help of numerical calculation. The effects of space charge layer (SCL) and polarization on the band structures are taken into consideration. Comparing the data of KPFM getting from µLEDs with different diameter, the smaller size µLEDs have larger area affected by strain relaxation. This phenomenon guarantees the excellent performance for µLEDs.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82590943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Interstitials Embedded in Pre‐Patterned Si Substrate on Location of Ge Nanoislands 预图片化Si衬底中嵌入的间隙对锗纳米岛位置的影响
Physica Status Solidi (c) Pub Date : 2017-11-02 DOI: 10.1002/PSSC.201700200
P. Novikov, T. Atovullaev, Zh. V. Smagina, A. Dvurechenskii, K. V. Pavskii
{"title":"Effect of Interstitials Embedded in Pre‐Patterned Si Substrate on Location of Ge Nanoislands","authors":"P. Novikov, T. Atovullaev, Zh. V. Smagina, A. Dvurechenskii, K. V. Pavskii","doi":"10.1002/PSSC.201700200","DOIUrl":"https://doi.org/10.1002/PSSC.201700200","url":null,"abstract":"Large-area periodical pattern on Si(100) was fabricated using combination of nanoimprint lithography and ion irradiation through mask. Ordered structures with grooves and ridges were prepared by the selective etching of regions amorphized by ion irradiation. Laterally ordered chains of Ge nanoislands were grown by molecular beam epitaxy of Ge on the pre-patterned Si substrates. It was shown, that the location of subsequently grown Ge nanoislands depends upon the sidewall inclination in grooves. The effect is ascribed to strain induced by Ge interstitials under the groove's bottom. Our proposal was confirmed by molecular dynamics calculations that allowed the determination of strain in grooves as dependent on the groove's shape.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"6 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87745982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optical Modeling of Ultrathin Silicon Solar Cells with PC1D 利用PC1D对超薄硅太阳能电池进行光学建模
Physica Status Solidi (c) Pub Date : 2017-11-02 DOI: 10.1002/PSSC.201700155
L. Abenante
{"title":"Optical Modeling of Ultrathin Silicon Solar Cells with PC1D","authors":"L. Abenante","doi":"10.1002/PSSC.201700155","DOIUrl":"https://doi.org/10.1002/PSSC.201700155","url":null,"abstract":"We show that the optical diffusion model embedded in the numerical simulation program PC1D systematically underestimates light-generated currents in thin textured Si solar cells. The demonstration exploits the exact analytical solution to minority-carrier transport in uniformly doped regions and the fact that, at the first pass of internal light, the average optical propagation angle, θ, with respect to the device normal is determined by surface texture. We provide a simple correction procedure to remove the aforementioned systematical error. One can so reliably model with PC1D the optical performance of textured thin devices at standard Lambertian regimen (θ = 60° at all wavelengths, λ) that starts at either the first or the second pass of trapped light. We exploit such a possibility to scrutinize with PC1D a reported non-standard Lambertian optical model, where θ varies with λ.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85358888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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