用开尔文探针力显微镜研究GaN基微led的应变松弛分布

Physica Status Solidi (c) Pub Date : 2017-11-02 DOI:10.1002/PSSC.201700222

J. Zhan, Zhizhong Chen, Q. Jiao, Yulong Feng, Chengcheng Li, Yifan Chen, F. Jiao, X. Kang, Shunfeng Li, T. Yu, Guoyi Zhang, B. Shen

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引用次数: 0

摘要

InGaN量子阱中的偏振是gan基发光二极管的关键问题。采用开尔文探针力显微镜(KPFM)检测微型led(µled)表面的应变松弛分布。结合数值计算，对KPFM的结果进行了分析。考虑了空间电荷层(SCL)和极化对能带结构的影响。对比不同直径µled的KPFM数据，尺寸越小的µled受应变松弛影响的面积越大。这种现象保证了µled的优异性能。

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Study on Strain Relaxation Distribution in GaN‐Based µLEDs by Kelvin Probe Force Microscopy

Polarization in InGaN quantum-wells (QWs) is the key issue for GaN-based light emitting diodes (LEDs). Kelvin probe force microscopy (KPFM) is used to detect the strain relaxation distribution on the mesa of micro LEDs (µLEDs). The results of KPFM are analyzed with the help of numerical calculation. The effects of space charge layer (SCL) and polarization on the band structures are taken into consideration. Comparing the data of KPFM getting from µLEDs with different diameter, the smaller size µLEDs have larger area affected by strain relaxation. This phenomenon guarantees the excellent performance for µLEDs.

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Physica Status Solidi (c)

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