Physica Status Solidi (c)最新文献_第3页

Thermal Impedance Extraction From Electrical Measurements for Double‐Ended Gate Transistors 双端栅极晶体管电测量的热阻抗提取

Physica Status Solidi (c) Pub Date : 2017-11-01 DOI: 10.1002/PSSC.201700225

A. Cutivet, M. Bouchilaoun, Ahmed Chakroun, C. Rodriguez, A. Soltani, A. Jaouad, F. Boone, H. Maher

引用次数: 4

Vibrational Properties of Monodispersed CdS Nanoparticles Immersed in a Matrix Constituted of SnO 2 Nanostructured Thin Films 单分散CdS纳米粒子在二氧化钛纳米薄膜基体中的振动特性

Physica Status Solidi (c) Pub Date : 2017-11-01 DOI: 10.1002/PSSC.201700221

E. Campos-Gonzalez, P. Rodríguez-Fragoso, J. Santoyo-Salazar, S. Tomás, F. D. De Moure-Flores, G. González de la Cruz, O. Zelaya-Ángel

引用次数: 0

Femtosecond‐Laser Irradiation onto Sapphire Substrates in an N 2 Ambient Atmosphere 飞秒激光在二氧化氮环境下对蓝宝石衬底的辐照

Physica Status Solidi (c) Pub Date : 2017-11-01 DOI: 10.1002/PSSC.201700224

Reina Miyagawa, Kenzo Goto, O. Eryu

引用次数: 0

Revisiting Stabilities of Cubic Zincblende IV‐IV Materials From Density Functional Theory 从密度泛函理论重新审视立方氧化锌IV - IV材料的稳定性

Physica Status Solidi (c) Pub Date : 2017-11-01 DOI: 10.1002/PSSC.201700226

N. Hammou, A. Zaoui, M. Ferhat

引用次数: 2

Blue Phosphorescent Organic Light‐Emitting Diodes Using N‐Type Semiconductor Extra Emission Layer 利用N型半导体额外发射层的蓝色磷光有机发光二极管

Physica Status Solidi (c) Pub Date : 2017-11-01 DOI: 10.1002/PSSC.201700162

Geum Jae Yun, S. Yoo, S. Lee, J. W. Kim, J. Kang, Young Kwan Kim, W. Kim

引用次数: 0

Impact of Electron Irradiation on N‐ and O‐Enriched FZ Silicon p ‐in‐ n Pad Radiation Detectors 电子辐照对富氮和富氧FZ硅p - in - N衬垫辐射探测器的影响

Physica Status Solidi (c) Pub Date : 2017-11-01 DOI: 10.1002/PSSC.201700019

K. Lauer, Xumei Xu, D. Karolewski, U. Gohs, Michal Kwestarz, P. Kamiński, Robert Täschner, T. Klein, T. Wittig, R. Röder, T. Ortlepp

引用次数: 0

Comparison of FTPS Performed on Thin Films and Solar Cells 薄膜与太阳能电池FTPS之比较

Physica Status Solidi (c) Pub Date : 2017-10-25 DOI: 10.1002/PSSC.201700165

N. Puspitosari, C. Longeaud, R. Lachaume, L. Zeyu, Rusli, P. Cabarrocas

{"title":"Comparison of FTPS Performed on Thin Films and Solar Cells","authors":"N. Puspitosari, C. Longeaud, R. Lachaume, L. Zeyu, Rusli, P. Cabarrocas","doi":"10.1002/PSSC.201700165","DOIUrl":"https://doi.org/10.1002/PSSC.201700165","url":null,"abstract":"Fourier Transform Photocurrent Spectroscopy (FTPS) has been used to investigate on the absorption coefficient versus photon energy (α(hν)) spectroscopy of thin film semiconductors. We have developed an FTPS experiment to study the α(hν) spectrum of hydrogenated amorphous silicon (a-Si:H) thin films, to subsequently deduce information on the density of states in the sub bandgap region. In this work we studied whether the same α(hν) spectroscopy could be found both for coplanar a-Si:H films deposited on glass and for NIP diodes incorporating the same material as the intrinsic layer. The back and front contacts of the diodes are made of transparent conductive oxides, either ITO or ZnO. The results show that the Urbach tails of both coplanar and NIP diodes are very similar but that α at low photon energy is slightly lower for the diodes than for the coplanar samples. In addition, we noticed that the diode with ZnO contacts presents a rapid increase of α below 0.95 eV. Transmission-reflection measurements performed on the diodes show that the diode with ZnO contacts exhibits a weaker transmission in the same wavelength range where we observed an increase of α, though the reflection with both types of contacts remains the same, indicating a parasitic absorption of the back ZnO layer. These results show that FTPS measurements performed on diodes must be taken very cautiously and that one has to take into account the optical properties (e.g., absorption) of the contacts to properly deduce reliable α(hν) spectroscopy.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85987812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Influence of Rare Earth (Nd and Tb) Co‐Doping on ZnO Thin Films Properties 稀土(Nd和Tb) Co掺杂对ZnO薄膜性能的影响

Physica Status Solidi (c) Pub Date : 2017-10-25 DOI: 10.1002/PSSC.201700169

A. E. Fakir, M. Sekkati, G. Schmerber, A. Belayachi, Z. Edfouf, M. Regragui, F. C. E. Moursli, Z. Sekkat, A. Dinia, A. Slaoui, M. Abd-lefdil

引用次数: 10

Investigation of Optical Gain in 1.55 μm p-i-n GaNAsBi-Based DQWs 1.55 μm p-i-n ganasbi基DQWs光增益研究

Physica Status Solidi (c) Pub Date : 2017-10-25 DOI: 10.1002/PSSC.201700163

I. Guizani, K. Chakir, M. M. Habchi, A. Rebey

引用次数: 3

Surface Modifications of Na and K Metal Incorporated Cu(In,Ga)Se2 Absorbers Investigated by Synchrotron‐Based Spectroscopies 同步加速器研究Na和K金属含Cu(In,Ga)Se2吸收剂的表面修饰

Physica Status Solidi (c) Pub Date : 2017-10-25 DOI: 10.1002/PSSC.201700167

I. Majumdar, B. Ümsür, B. Chacko, D. Greiner, M. Lux‐Steiner, R. Schlatmann, I. Lauermann

{"title":"Surface Modifications of Na and K Metal Incorporated Cu(In,Ga)Se2 Absorbers Investigated by Synchrotron‐Based Spectroscopies","authors":"I. Majumdar, B. Ümsür, B. Chacko, D. Greiner, M. Lux‐Steiner, R. Schlatmann, I. Lauermann","doi":"10.1002/PSSC.201700167","DOIUrl":"https://doi.org/10.1002/PSSC.201700167","url":null,"abstract":"Na and K metals have been evaporated on a Cu(In,Ga)Se2 (CIGSe) thin film solar cell absorber at 400 °C in order to investigate the effect of alkali metal incorporation on the very near-surface (up to 5 nm) region of the CIGSe absorber using soft X-ray spectroscopy techniques, focusing on the main compositional and electronic modifications of the absorber surface. Quantitative X-ray photoelectron spectroscopy (XPS) showed Cu deficiency and Se enrichment on the CIGSe surface after alkali treatment which may play a role in assisting Na diffusion away from the surface, leaving behind a significantly higher K content than Na along the entire range of the CIGSe surface region probed, although nominally equal amounts of Na and K metal have been evaporated onto the CIGSe surface. A [K]/([K]+[Cu]) concentration ratio of 0.99 ± 0.01 at an information depth of ≈1.7 nm from the surface may indicate the formation of a wide band gap compound like KInSe2 (Eg ∼ 2.67 eV) on the CIGSe surface as a result of alkali metal deposition. Ultra-violet photoemission spectroscopy (UPS) and near edge X-ray absorption fine structure spectroscopy (NEXAFS) measurements further confirm a 1.09 eV surface band gap increase along with a type-inversion at the surface of the alkali metal-incorporated CIGSe as compared to the untreated CIGSe with a surface band gap of 1.3 ± 0.2 eV. These changes in the surface composition and electronic structure of the modified CIGSe surface as a result of the alkaline treatment could be attributed to the increase in alkali-treated CIGSe-based thin film solar cell efficiencies seen in recent years.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"72 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89409829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1