Thermal Impedance Extraction From Electrical Measurements for Double‐Ended Gate Transistors

Abstract

Transistor's thermal impedance is a parameter of prime importance to predict the device peak temperature in applications of power and RF electronics featuring time-dependent dissipated power. In the context of the upcoming GaN HEMT technology, an innovative methodology is hereby detailed for the extraction of a transistor thermal dynamic behavior. This technique uses the dependence of the Gate resistance over temperature and thus only requires common electrical measurement of the device. An original technique is introduced to make this method robust to an inherent electrical coupling effect.