稀土(Nd和Tb) Co掺杂对ZnO薄膜性能的影响

A. E. Fakir, M. Sekkati, G. Schmerber, A. Belayachi, Z. Edfouf, M. Regragui, F. C. E. Moursli, Z. Sekkat, A. Dinia, A. Slaoui, M. Abd-lefdil
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引用次数: 10

摘要

采用化学喷雾热解法,在350℃加热玻璃衬底上制备了稀土共掺杂氧化锌薄膜。研究了掺杂率对结构、光学和电学性能的影响。x射线衍射证实所有制备的薄膜都具有偏向c轴取向的六方纤锌矿结构。XRD技术检测范围内未见稀土及其氧化物的峰。紫外-可见-近红外光谱在75%以上具有显著的光透射率,随Tb浓度的增加而减小,随稀土掺杂剂的加入而增大光学带隙。光致发光光谱主要是由激子的辐射复合引起的发射带和ZnO基体中各种缺陷引起的大能带。此外,在(Nd, Tb)共掺杂薄膜中观察到Nd3+离子的能带发射。电阻率约为3.7 10-2 Ω·cm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of Rare Earth (Nd and Tb) Co‐Doping on ZnO Thin Films Properties
Zinc oxide thin films co-doped with rare earth (Nd and Tb) have been grown on heated glass substrates (350 °C) by chemical spray pyrolysis method. The effect of doping rate on structural, optical, and electrical properties is studied. X-ray diffraction confirmed that all the prepared films have the hexagonal wurtzite structure with a preferred orientation toward the c-axis. No peaks belonging to rare earth or their oxides are observed in the limit of XRD technique detection. UV–visible-NIR spectra show a significant optical transmission above 75%, which decrease with the increase of Tb concentration and an increase of the optical band gap with the insertion of the rare earth dopants. Photoluminescence spectra are dominated by an emission band attributed to the radiative recombination of excitons and a large band attributed to the various defects in ZnO matrix. In addition band emissions from Nd3+ ions are observed in the (Nd, Tb) co-doped films. Electrical resistivity of about 3.7 10–2 Ω · cm was achieved.
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