Physica Status Solidi (c)最新文献_第10页

Annealing effects on Ga‐doped ZnO thin films grown by atmospheric spray pyrolysis using diethylzinc solution 二乙基锌溶液常压喷雾热解制备Ga掺杂ZnO薄膜的退火效应

Physica Status Solidi (c) Pub Date : 2017-06-01 DOI: 10.1002/pssc.201600177

K. Yoshino, Himeka Tominaga, Akiko Ide, K. Nishioka, T. Naka

引用次数: 0

Observation of the c ‐ f hybridization effect in valence‐transition system EuPtP 价跃迁体系EuPtP中c - f杂化效应的观察

Physica Status Solidi (c) Pub Date : 2017-06-01 DOI: 10.1002/pssc.201600185

H. Anzai, K. Ichiki, E. Schwier, H. Iwasawa, M. Arita, H. Sato, K. Shimada, H. Namatame, M. Taniguchi, A. Mitsuda, H. Wada, K. Mimura

引用次数: 0

Structural analysis of co‐evaporated In 2 S 3 and In 2 S 3 :V for solar cell absorber applications 用于太阳能电池吸收剂的co -蒸发in2o3和in2o3:V的结构分析

Physica Status Solidi (c) Pub Date : 2017-06-01 DOI: 10.1002/PSSC.201600204

Leonard A. Wägele, D. Rata, G. Gurieva, R. Scheer

引用次数: 6

Annealing behaviour of photoluminescence spectra on Cu 2 ZnSnS 4 single crystals cu2 znsns4单晶光致发光光谱的退火行为

Physica Status Solidi (c) Pub Date : 2017-06-01 DOI: 10.1002/PSSC.201600158

S. Seto, H. Araki

引用次数: 5

Preparation of Zn 2 SiO 4 :Mn 2+ films by electrical discharge pulse method 放电脉冲法制备zn2 sio4: mn2 +薄膜

Physica Status Solidi (c) Pub Date : 2017-06-01 DOI: 10.1002/PSSC.201600179

M. Hattori, Yuya Suzuki, A. Goto, M. Dohi

引用次数: 2

Improvement of photoelectric conversion efficiencies of dye‐sensitized solar cells consisting of hemispherical TiO 2 films 半球形二氧化钛薄膜染料敏化太阳能电池光电转换效率的提高

Physica Status Solidi (c) Pub Date : 2017-06-01 DOI: 10.1002/PSSC.201600186

Shogo Izumi, Ayame Mizuno, N. Ohtani

引用次数: 0

Low band‐gap CuIn(S,Se) 2 thin film solar cells using molecular ink with 9.5% efficiency (Phys. Status Solidi C 6/2017) 使用分子墨水的低带隙CuIn(S,Se) 2薄膜太阳能电池效率为9.5%。Solidi C 6/2017)

Physica Status Solidi (c) Pub Date : 2017-06-01 DOI: 10.1002/PSSC.201770006

Yajie Wang, Xianzhong Lin, Lan Wang, T. Köhler, M. Lux‐Steiner, R. Klenk

引用次数: 0

Optical properties and electronic structures of CuSbS 2 , CuSbSe 2 , and CuSb(S 1−x Se x ) 2 solid solution cusbs2、CuSbSe 2和CuSb(s1−x Se x) 2固溶体的光学性质和电子结构

Physica Status Solidi (c) Pub Date : 2017-06-01 DOI: 10.1002/PSSC.201600196

T. Wada, T. Maeda

{"title":"Optical properties and electronic structures of CuSbS\u0000 2\u0000 , CuSbSe\u0000 2\u0000 , and CuSb(S\u0000 1−x\u0000 Se\u0000 x\u0000 )\u0000 2\u0000 solid solution","authors":"T. Wada, T. Maeda","doi":"10.1002/PSSC.201600196","DOIUrl":"https://doi.org/10.1002/PSSC.201600196","url":null,"abstract":"To clarify electronic structures of CuSbS2, CuSbSe2, and CuSb(S1−xSex)2 solid solutions, these powder samples were synthesized by a mechanochemical process and post-heating. CuSbS2 and CuSbSe2 have indirect and direct band gaps, of which the direct band gaps are a little wider than the indirect band gaps. The ionization energies of CuSb(S1−xSex)2 (0.0 ≤ x ≤ 1.0) powders were measured by photoemission yield spectroscopy (PYS). Energy levels of the valence band maximum (VBM) of the CuSb(S1−xSex)2 samples were estimated from the ionization energies. The electron affinity, energy level of conduction band minimum (CBM), of the CuSb(S1−xSex)2 samples could also be determined by adding the value of the optical band gap to the energy level of the VBM. The energy level of the VBM of the CuSb(S1−xSex)2 system monotonically increases from −5.45 eV for CuSbS2 (x = 0.0) to −5.15 eV for CuSbSe2 (x = 1.0). On the other hand, the energy levels of the indirect CBM of the CuSb(S1−xSex)2 system slightly decrease from −4.05 eV for CuSbS2 to −4.11 eV for CuSbSe2. The energy levels of the direct CBM also slightly decrease from −4.00 eV for CuSbS2 to −4.07 eV for CuSbSe2. We show the band alignment of CuSbS2 (CuSbSe2)-based solar cells with a standard device structure of ZnO/CdS/CuSbS2 (CuSbSe2) absorber.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87778701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 29

X‐ray characterization of self‐organized periodic body‐centered tetragonal lattices of SiGe dots SiGe点自组织周期体心四边形晶格的X射线表征

Physica Status Solidi (c) Pub Date : 2017-05-31 DOI: 10.1002/PSSC.201700004

P. Zaumseil, Y. Yamamoto, G. Capellini

引用次数: 0

Optical and electronic properties of periodic Si nanostructures 周期性硅纳米结构的光学和电子性质

Physica Status Solidi (c) Pub Date : 2017-05-30 DOI: 10.1002/PSSC.201700093

A. Tavkhelidze, A. Bayramov, Y. Aliyeva, L. Jangidze, G. Skhiladze, S. Asadullayeva, O. Alekperov, N. Mamedov

{"title":"Optical and electronic properties of periodic Si nanostructures","authors":"A. Tavkhelidze, A. Bayramov, Y. Aliyeva, L. Jangidze, G. Skhiladze, S. Asadullayeva, O. Alekperov, N. Mamedov","doi":"10.1002/PSSC.201700093","DOIUrl":"https://doi.org/10.1002/PSSC.201700093","url":null,"abstract":"Nanogratings (NGs) on the surface of the top Si layer of a Si/SiO2/ substrate device structure were prepared using laser interference lithography. Electron transport, photoluminescence, and Raman scattering were then studied on the plain Si and NG Si structures to see the effect of NG introduction. As a result of NG-introduction and very likely G-doping maintenance, all samples studied in this work displayed a 2 to 3 order of magnitude reduction in resistivity for NG Si. The Hall coefficient indicated that electrons are main charge carriers that is also expected for exactly G-doping. Plain Si layer did not show any photoluminescence either for 532 nm (2.38 eV) or 325 nm (3.81 eV) laser excitation. A broad photoluminescence band, composed of a number of almost equidistant peaks was observed on NG Si layer between the photon energies 1.5 and 3.5 eV. Both Stocks and anti-Stocks components for 522.65 cm−1 phonons at room temperature were observed in the Raman spectra of NG Si layer. Estimated from the ratio between the intensities of Stocks and anti-Stocks components, the drop (if any) in phonon gas temperature below ambient (295 K) does not exceed 3 K.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"27 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83514094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4