cu2 znsns4单晶光致发光光谱的退火行为

S. Seto, H. Araki
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引用次数: 5

摘要

本文测量了用碘输运法生长的Cu2ZnSnS4 (CZTS)单晶在10 K时的光致发光(PL)光谱,并探讨了Zn和s饱和下PL光谱的退火变化。所有晶体均表现为贫S和贫Zn成分,且接近于Cu/(Zn + Sn)的化学计量组成。观测到的PL光谱分为两组;一个是峰值在~ 1.3 eV (1.3 eV波段)的PL波段,另一个是峰值在~ 1.35 eV (1.35 eV波段)的PL波段。SEM观察发现,在镜面状晶面的晶体中观察到1.35-eV的能带,而在具有一些小的暗区域的晶体中观察到1.3-eV的能带,这些暗区域的成分是cu贫的。600℃下zn饱和退火导致PL峰位移约0.1 eV,从1.295 eV到1.185 eV。550℃的s饱和退火使发光完全消失。讨论了这些退火行为的含义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Annealing behaviour of photoluminescence spectra on Cu 2 ZnSnS 4 single crystals
We have measured photoluminescence (PL) spectra at 10 K for Cu2ZnSnS4 (CZTS) single crystals grown by the iodine transport method and explored the anneal changes of PL spectra under a Zn and S-saturation. All the crystals showed S- and Zn-poor composition, and nearly stoichiometric composition of Cu/(Zn + Sn). The observed PL spectra are divided into two groups; one is PL band with a peak at ∼1.3 eV (1.3-eV band), and another is PL band with a peak at ∼1.35 eV (1.35-eV band). It was found from SEM observations that the 1.35-eV band was observed in crystals with a mirror-like facet and, on the other hand, the 1.3-eV band was seen in the crystals with some small dark areas where the composition is Cu-poor. The Zn-saturated annealing at 600 °C caused the PL peak shift of ∼0.1 eV, from 1.295 to 1.185 eV. The S-saturated annealing at 550 °C caused a disappearance of PL emission. The implications of these annealing behaviour are discussed.
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