Physica Status Solidi (c)最新文献_第5页

Photoluminescence from Ordered Ge/Si Quantum Dot Groups Grown on the Strain‐Patterned Substrates 应变图案衬底上生长的有序Ge/Si量子点群的光致发光

Physica Status Solidi (c) Pub Date : 2017-09-15 DOI: 10.1002/PSSC.201700187

A. Dvurechenskii, A. Zinovieva, V. Zinovyev, A. Nenashev, Zh. V. Smagina, S. Teys, A. Shklyaev, S. Erenburg, S. Trubina, O. M. Borodavchenko, V. Zhivulko, A. Mudryi

引用次数: 4

Coupling Optical and Electrical Modelling for the study of a-Si:H-based nanowire Array Solar Cells a-Si: h基纳米线阵列太阳能电池研究的耦合光学和电学建模

Physica Status Solidi (c) Pub Date : 2017-09-15 DOI: 10.1002/PSSC.201700181

Alexandra Levtchenko, R. Lachaume, Jérôme Michallon, S. Collin, J. Alvarez, S. D. Gall, Z. Djebbour, J. Kleider

{"title":"Coupling Optical and Electrical Modelling for the study of a-Si:H-based nanowire Array Solar Cells","authors":"Alexandra Levtchenko, R. Lachaume, Jérôme Michallon, S. Collin, J. Alvarez, S. D. Gall, Z. Djebbour, J. Kleider","doi":"10.1002/PSSC.201700181","DOIUrl":"https://doi.org/10.1002/PSSC.201700181","url":null,"abstract":"Coupled optical/electrical simulations have been performed on solar cells consisting in arrays of p-i-n radial nanowires based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell heterojunctions. Three-dimensional (3D) optical calculations based on rigorous coupled wave analysis (RCWA) are firstly performed and then coupled to a semiconductor device simulator that exploits the radial symmetry of the nanowires. By varying either the doping concentration of the c-Si core, or the work function of the Al-doped ZnO (AZO) back contact we can separate and originally highlight the contribution to the cells performance of the nanowires themselves (the radial cell) from the planar part in between the nanowires (the planar cell). We show that the short-circuit current density (Jsc) only depends on the doping of the c-Si core indicating that it is mainly influenced by the radial cell. On the contrary the open-circuit voltage (Voc) is strongly affected by the back contact conditions (AZO work function), revealing an important impact of the interspacing between the nanowires on the characteristics of the entire nanowire array. We explain this strong influence of the back contact conditions by the fact that it determines the band-bending in the a-Si:H absorber shell touching the AZO, i.e. in the planar part. Therefore, it directly impacts the potential drop (Vbi) in the same area. For low AZO work functions, the dark current density (Jdark) is increased in the planar region, where Vbi is lower, which degrades the Voc of the entire cell.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"56 1","pages":"1700181"},"PeriodicalIF":0.0,"publicationDate":"2017-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81000141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

High Sensitivity Flame Sensor Based on PbS Colloidal Quantum Dots 基于PbS胶体量子点的高灵敏度火焰传感器

Physica Status Solidi (c) Pub Date : 2017-09-15 DOI: 10.1002/PSSC.201700186

A. D. Iacovo, Carlo Venettacci, L. Colace, L. Scopa, S. Foglia

引用次数: 1

Flexible Cu(In,Ga)Se2 Based Solar Cells Using Molybdenum Foils as Substrate 以钼箔为衬底的柔性Cu(In,Ga)Se2基太阳能电池

Physica Status Solidi (c) Pub Date : 2017-09-14 DOI: 10.1002/PSSC.201700174

M. Stanley, M. Jubault, F. Donsanti, N. Naghavi

引用次数: 4

Impact of the Seed Layer Morphology on the Initial Growth of HPMC‐Si Ingot 种子层形态对HPMC - Si铸锭初始生长的影响

Physica Status Solidi (c) Pub Date : 2017-09-13 DOI: 10.1002/PSSC.201700177

Giri Wahyu Alam, E. Pihan, B. Marie, N. Mangelinck-Noël

引用次数: 2

Formation and Strain Analysis of Stacked Ge Quantum Dots With Strain‐Compensating Si1−xCx Spacer 应变补偿Si1−xCx间隔层叠加Ge量子点的形成和应变分析

Physica Status Solidi (c) Pub Date : 2017-09-11 DOI: 10.1002/PSSC.201700197

Y. Itoh, T. Kawashima, K. Washio

{"title":"Formation and Strain Analysis of Stacked Ge Quantum Dots With Strain‐Compensating Si1−xCx Spacer","authors":"Y. Itoh, T. Kawashima, K. Washio","doi":"10.1002/PSSC.201700197","DOIUrl":"https://doi.org/10.1002/PSSC.201700197","url":null,"abstract":"To stack Ge quantum dots (QDs) in a multilayer structure without undesirable enlargement of the QDs, the effects of both Si1−xCx spacer on a strain compensation of the embedded QDs and a sub-monolayer (ML) carbon (C) mediation on a formation of the Volmer-Weber (VW)-mode Ge QDs on the Si1−xCx spacer were investigated. In a Si1−xCx/Ge/Si(100) structure, lattice rexation of the embedded QDs was kept about 80% at x = 0.015. This maintaining the state of high relaxation attributed to a tensile strain from the Si1−xCx layer grown on a surface of a Si substrate around the QDs. In addition, by utilizing an analysis of Kelvin probe force microscopy, it was revealed that the sub-ML C mediation of 0.25 ML and over is effective to form the VW-mode Ge QDs on the Si1−xCx spacer. This is because the promotion of subdivision effect for the formation of the QDs via C mediation was also effective on the Si1−xCx surface. At C = 0.25 and 0.5 ML, diameter and density of second QDs were about 22 nm and 1.5 × 1011 cm−2, respectively. These results pave the way to stack the VW-mode Ge QDs in the multilayer structure without enlargement of the QDs.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89047903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of Structural, Optical, and Electrical Properties of In‐Doped SnO2 Thin Films Deposited by Spray Pyrolysis 喷雾热解沉积In掺杂SnO2薄膜的结构、光学和电学性质研究

Physica Status Solidi (c) Pub Date : 2017-09-11 DOI: 10.1002/PSSC.201700189

A. Hadri, A. E. Hat, M. Sekkati, A. Mzerd

{"title":"Investigation of Structural, Optical, and Electrical Properties of In‐Doped SnO2 Thin Films Deposited by Spray Pyrolysis","authors":"A. Hadri, A. E. Hat, M. Sekkati, A. Mzerd","doi":"10.1002/PSSC.201700189","DOIUrl":"https://doi.org/10.1002/PSSC.201700189","url":null,"abstract":"In this work, undoped and 1–5 at.% In-doped SnO2-δ films are deposited onto glass substrates at 350 °C by spray pyrolysis technique. The influence of dopant concentration is investigated using X-ray diffraction (XRD), UV-Visible spectroscopy, and Hall Effect measurements using van der Pauw method. X-ray diffraction studies indicate that all films had preferred orientation along (200) plane and are polycrystalline with tetragonal rutile structure. The calculated average crystallite sizes increased after doping. Substitution of In into SnO2-δ thin films can be confirmed by the shifting of the peaks in the XRD patterns. Optical transmittance of the films show high average transparency ∼80–90% in the visible region. Hall measurements show that the conduction type is dependent on In content. For low-doped films (In ≤3 at.%), the films are n-type, while at higher doping concentration the films are p-type. The calculated values of the mean free path are very small compared to the average crystallite sizes calculated using XRD measurements. Therefore, we suggest that ionized and/or neutral impurity scattering are the main scattering mechanisms in these films. The above-mentioned characteristics render these In-doped SnO2 films potential candidates for their use in light-emitting diode and in optoelectronic devices, with the advantage that they are prepared by a simple and economical technique.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"86 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76192961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Improved Reliability Performance of Junctionless Nanoscale DG MOSFET with Graded Channel Doping Engineering 采用渐变通道掺杂技术提高无结纳米级DG MOSFET的可靠性性能

Physica Status Solidi (c) Pub Date : 2017-09-07 DOI: 10.1002/PSSC.201700147

T. Bentrcia, F. Djeffal, D. Arar, Elasaad Chebaki

引用次数: 1

Efficiency Enhancement of a-Si:H/c-Si-Based Radial Solar Cell by Optimizing the Geometrical and Electrical Parameters 优化几何和电学参数提高a-Si:H/c- si基径向太阳能电池效率

Physica Status Solidi (c) Pub Date : 2017-09-07 DOI: 10.1002/PSSC.201700146

H. Ferhati, F. Djeffal, D. Arar, Z. Dibi

{"title":"Efficiency Enhancement of a-Si:H/c-Si-Based Radial Solar Cell by Optimizing the Geometrical and Electrical Parameters","authors":"H. Ferhati, F. Djeffal, D. Arar, Z. Dibi","doi":"10.1002/PSSC.201700146","DOIUrl":"https://doi.org/10.1002/PSSC.201700146","url":null,"abstract":"In this paper, a new particle swarm optimization-based approach is proposed for the geometrical optimization of the nanowires solar cells to achieve improved optical performance. The proposed hybrid approach combines the 3-D numerical analysis using accurate solutions of Maxwell's equations and metaheuristic investigation to boost the solar cell total absorbance efficiency. Our purpose resides on modulating the electric field and increasing the light trapping capability by optimizing the radial solar cell geometrical parameters. Moreover, a comprehensive study of vertical core-shell nanowire arrays optical parameters such as the integral absorption, reflection, and total absorbance efficiency is carried out, in order to reveal the optimized radial solar cells optical performance for low-cost photovoltaic applications. We find that the proposed hybrid approach plays a crucial role in improving the nanowires solar cells optical performance, where the optimized design exhibits superior total absorbance efficiency and lower total reflection in comparison with those provided by the conventional planar design. The obtained results make the proposed global optimization approach valuable for providing high-efficiency nanowires solar cells.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79883854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

PbS Colloidal Quantum Dot Near Infrared Photoconductors: DC and Noise Characterization PbS胶体量子点近红外光导体:直流和噪声特性

Physica Status Solidi (c) Pub Date : 2017-09-06 DOI: 10.1002/pssc.201700185

L. Colace, A. D. Iacovo, Carlo Venettacci

引用次数: 0