Physica Status Solidi (c)最新文献

{"title":"Optoelectronics Using 2D Colloidal Nanocrystals from Wide Band Gap to Narrow Band Gap Materials","authors":"Bertille Martinez, Clément Livache, N. Goubet, Eva Izquierdo, M. Silly, S. Ithurria, E. Lhuillier","doi":"10.1002/PSSC.201700138","DOIUrl":"https://doi.org/10.1002/PSSC.201700138","url":null,"abstract":"Colloidal nanocrystals are playing an increasing role for the development of low cost optoelectronics. Among these materials, 2D nanoplatelets (NPL) offer particularly well-controlled optical features and their integration into device such as transistor and photoconductor is here discussed. We present recent results obtained on the optoelectronic properties of CdSe/CdS and HgTe 2D nanoplatelets (NPL). The manuscript is organized along three main sections. The first part is an introduction to 2D NPLs and their structural and optical properties. The second part gets focused on CdSe/CdS NPL and their photoconductive properties. We in particular highlight the key role plays by the 2D geometries on the charge dissociation. Finally the last part of the paper discusses about the recent report of HgTe and HgSe NPL with optical features in the near infrared. Here we discuss how the surface chemistry can be used to tune the majority carrier and the photoconductive properties of the material.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76565506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Alkali Assisted Reduction of Open‐Circuit Voltage Deficit in CZTSe Solar Cells","authors":"S. Garud, B. Vermang, S. Sahayaraj, S. Ranjbar, G. Brammertz, M. Meuris, A. Smets, J. Poortmans","doi":"10.1002/PSSC.201700171","DOIUrl":"https://doi.org/10.1002/PSSC.201700171","url":null,"abstract":"Pure selenide Cu2ZnSnSe4 solar cells were fabricated with a maximum achieved open-circuit voltage (VOC) of 454 mV, which is on par with the highest known VOC for this technology (Bourdais et al., Adv. Energ. Mater. 2016, 6). A simple, non-vacuum, spin coating technique was developed for the introduction of alkali ions (Li+, K+, Rb+) before two annealing steps. The presence of Rb and Li ions in particular, was observed to reduce recombination in the bulk and increase minority charge carrier decay time. This resulted in the reduction of the redshift in the photoluminescence peak from the bandgap and the VOC deficit. Bandgap variations and electrostatic potential fluctuations in conduction and valence bands were investigated as aspects likely affected by alkali ions.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"13 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75902875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"TiF3:TiN nanocomposite thin films – a novel transparent conductor system","authors":"T. Blomberg, H. Huotari, M. Tuominen, Linda Lindroos","doi":"10.1002/PSSC.201700006","DOIUrl":"https://doi.org/10.1002/PSSC.201700006","url":null,"abstract":"","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"6 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75210147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical and morphological evolution of black TiOx synthesized in water by Nd:YAG laser","authors":"D. Spucches, M. Zimbone, G. Cacciato, F. Ruffino, V. Privitera, M. Grimaldi","doi":"10.1002/pssc.201700134","DOIUrl":"https://doi.org/10.1002/pssc.201700134","url":null,"abstract":"Optical and morphological properties of nanostructured TiOx film formed by 532 nm nanosecond pulsed laser irradiation in water is analysed. We observe three different surface features: blackening, surface pits and sub-surface bubbles. The appearance of these features is allowed once an irradiation fluence of 0.9 J cm−2 is used. Nevertheless, blackening, formation of pits and bubble are delayed until an accumulated fluence threshold of 7.5, 23 and 24 J cm−2 is achieved respectively. A fully evolved complex nano-porous structure is obtained at an accumulated fluence of 100 J cm−2. A possible mechanism of formation of these features was inferred.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"95 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73593753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cadmium Sulfide Is a Very Unusual Model Semiconductor","authors":"K. W. Böer","doi":"10.1002/PSSC.201700206","DOIUrl":"https://doi.org/10.1002/PSSC.201700206","url":null,"abstract":"CdS has three states that are thermodynamically stable, one at low fields and two at high fields when stationary high-field domains are initiated in a range of negative differential conductivity, one when the domain is attached to the cathode then the CdS is n-type. And the other one when the domain is attached to the anode and the CdS is turned p-type. When the photoconductivity of CdS is field quenched stronger than linearly, a band of lowest conductivity is introduced between the electrodes, the field in this band is increased to maintain current continuity. This is the high-field domain, that limits the current to a low, constant value. With increased bias the domain expands, but current and domain field remain constant. As long as the domain is attached to the cathode, stationarity is achieved by the limited supply of electrons from the blocking cathode. When the domain is expanded to reach the anode, then a new, higher field domain is generated at the anode that expands toward the cathode and stability is maintained because of the limited supply of holes from the blocking anode. The Minimum Entropy principle forces the current to remain constant by adjusting the width of the higher field, anode-adjacent domain: the transition from the cathode to the anode adjacent domain is not visible in the current that remains saturated, but the conductivity changes from n- to p-type, and now attains the third stable thermodynamic state. This is the first time CdS is p-type that can never be achieved by doping (where the CdS is self-compensating by a strong intrinsic donor). This is very unusual since the current in both cases is carried by drift alone: j = e n μn Fc = e p μp Fa and is forced to remain the same, even though carrier density and mobility are substantially different. All of this is accomplished by adjusting the width and the field of the high-field domain. There is one more unusual coincidence, because both domains require that they are created in a range of overcritical negative conductivity. That needs to have a defect distribution of donors and acceptors for providing this negative differential conductivity at a similar field for electron- and for hole-quenching. It is given by field excitation from Coulomb attractive traps that all lie in the kV cm−1 range. Cadmium sulfide which has an extensive distribution of Coulomb attractive electron and hole traps that can produce such conditions that no other known semiconductor can provide. This is believed to make CdS such an unusual model semiconductor that can perform the many applications, foremost in combination with p-type solar cells without pn-junction that with a thin layer of CdS create highly efficient solar cells.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"77 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79508602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Role of the post-annealing conditions on the conductivity of niobium doped titanium dioxide electrodes prepared by sol–gel and their function in organic solar cells","authors":"Peter Fischer, L. Montañez, Shah Alam, R. Roesch, U. Schubert, H. Hoppe, E. Rädlein","doi":"10.1002/PSSC.201700011","DOIUrl":"https://doi.org/10.1002/PSSC.201700011","url":null,"abstract":"In this work, we report the fabrication of indium tin oxide free organic solar cells and demonstrate the ability of niobium doped titanium dioxide (TNO) layers produced by sol–gel as feasible alternative electrode. The conductivity of the TNO was tailored by changing the layer thickness and the post-annealing conditions. Later, the crystal structure was revealed by X-ray diffraction. The post-annealing treatments were performed in a rapid thermal processing furnace under different gas atmospheres, temperatures and times. The conductivity of the samples was measured using a four-point set-up and the transparency through a UV–VIS spectrophotometer. A good sheet resistance of 181 Ω/□ is achieved when the electrode was heated in an N2/H2 atmosphere mixture at 1000 °C for 10 min. TNO based organic solar cells were manufactured and their performance was evaluated by current-voltage measurements. A power conversion efficiency of 0.71% was attained.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83672565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Anisotropic Magnetoresistance Effect of a Strong Ferromagnet: Magnetization Direction Dependence in a Model With Crystal Field [Phys. Status Solidi C 11, No. 5–6, 1026–1032 (2014)]","authors":"S. Kokado, M. Tsunoda","doi":"10.1002/PSSC.201700218","DOIUrl":"https://doi.org/10.1002/PSSC.201700218","url":null,"abstract":"","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"44 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90754963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electron Concentration Profiles in Modulation Doped Structures With Wide Quantum Well","authors":"L. Shchurova, Y. Galperin","doi":"10.1002/PSSC.201700190","DOIUrl":"https://doi.org/10.1002/PSSC.201700190","url":null,"abstract":"We calculate a concentration profile of Fermi electrons in modulation doped structures with a wide quantum well. The electron system with a sufficiently high density, such that the de Broglie wavelength of electrons is smaller than the potential well width, is considered. To calculate the spatial distribution of the electrons, we have formulated a hydrodynamic model with the consideration of electron-ion Coulomb interaction, screening effects, and exchange coupling. Within this model, we have obtained analytical solutions for the charge carrier concentration as a function of coordinates in the potential well. In quantum areas near the interfaces, we carried out quantum mechanical calculations for a screened exchange potential. The electron concentration profile is presented for modulation doped AlGaAs/GaAs/AlGaAs heterostructures.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"97 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73839489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Transport Properties of Graphene‐BiTeI Hybrid Structures","authors":"Z. Tajkov, D. Visontai, P. Rakyta, L. Oroszlány, J. Koltai","doi":"10.1002/PSSC.201700215","DOIUrl":"https://doi.org/10.1002/PSSC.201700215","url":null,"abstract":"Recent studies have shown that heterostructures comprised of graphene and certain chalcogenides are robust two-dimensional (2D) topological insulators. We developed a simplified model Hamiltonian for such systems and investigated their properties as the function of various parameter values. We mapped the phases of the system that can behave as an insulator, metal or topological insulator. We used this simplistic model to calculate transport characteristics on experimentally relevant sample sizes.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84762290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Atomic Layer Deposition for Vertically Integrated ZnO Thin Film Transistors: Toward 3D High Packing Density Thin Film Electronics","authors":"Zulkarneyn Sisman, Sami Bolat, A. Okyay","doi":"10.1002/PSSC.201700128","DOIUrl":"https://doi.org/10.1002/PSSC.201700128","url":null,"abstract":"We report on the first demonstration of the atomic layer deposition (ALD) based three dimensional (3D) integrated ZnO thin film transistors (TFTs) on rigid substrates. Devices exhibit high on-off ratio (∼106) and high effective mobility (∼11.8 cm2 V−1 s−1). It has also been demonstrated that the steps of fabrication result in readily stable electrical characteristics in TFTs, eliminating the need for post-production steps. These results mark the potential of our fabrication method for the semiconducting metal oxide-based vertical-integrated circuits requiring high packing density and high functionality.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91293294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}