Physica Status Solidi (c)最新文献_第7页

Refined Analysis of Low-Temperature Data of Hall-Effect Measurements on Sb-Doped n-Ge on the Basis of an Impurity-Hubbard-Band Model 基于杂质- hubard - band模型的sb掺杂n-Ge霍尔效应低温测量数据精细化分析

Physica Status Solidi (c) Pub Date : 2017-08-21 DOI: 10.1002/PSSC.201700151

Y. Kajikawa

{"title":"Refined Analysis of Low-Temperature Data of Hall-Effect Measurements on Sb-Doped n-Ge on the Basis of an Impurity-Hubbard-Band Model","authors":"Y. Kajikawa","doi":"10.1002/PSSC.201700151","DOIUrl":"https://doi.org/10.1002/PSSC.201700151","url":null,"abstract":"The Hall-effect measurement data on Sb-doped n-Ge reported by Fritzsche [J. Phys. Chem. Solids 6, 69 (1958)] have been analyzed considering not only the bottom Hubbard band formed from the neutral donor (D0) states but also the top Hubbard band formed from the negatively charged donor (D−) states. Taking into account the degeneracy factors for the D0 and D− states as well as the dependence of the dielectric constant on the concentration of the D0 states, simultaneous fits to the experimental data of the temperature-dependent conductivity and the Hall coefficient have been performed with assuming the hopping drift mobility expressed as μi = μ0i(Eμi/kBT)3/2exp(−Eμi/kBT) and the hopping Hall factor expressed as AHi = (kBT/IHi)exp(KHEμi/kBT), where i = 2 and 3 for the top and the bottom Hubbard band, respectively. The deduced values of Eμ3 from the fits have been proved to be well explained by the molecular-pair theory. The energy separation U between the top and the bottom Hubbard band has also been obtained through the fits with assuming U = Eμ2. It is shown that the fits have been satisfactorily performed with assuming a constant value of KH= 2/3.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"6 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79199991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Influence of the Chemical Activity of Implanted Ions on the Structure of the Damaged Si Layer in SIMOX Substrates 注入离子的化学活性对SIMOX衬底中受损Si层结构的影响

Physica Status Solidi (c) Pub Date : 2017-08-02 DOI: 10.1002/PSSC.201700137

K. Shcherbachev, V. Mordkovich, E. Skryleva, D. Kiselev

{"title":"Influence of the Chemical Activity of Implanted Ions on the Structure of the Damaged Si Layer in SIMOX Substrates","authors":"K. Shcherbachev, V. Mordkovich, E. Skryleva, D. Kiselev","doi":"10.1002/PSSC.201700137","DOIUrl":"https://doi.org/10.1002/PSSC.201700137","url":null,"abstract":"High-resolution X-ray diffraction (HRXRD), X-ray reflectometry (XRR), X-ray photoelectron spectroscopy (XPS), and Atomic-force microscopy (AFM) were used to study the influence of the chemical activity of implanted ions (N+, O+, F+ or Ne+) on the structure of the damaged Si layer in SIMOX substrates. The implantation conditions were chosen so that the number of primary defects and the projected range were approximately the same for the implanted ions. HRXRD showed that the depth distribution of the residual damage depends on the chemical activity of the impurity. This may result from the quasi-chemical interaction between the radiation-induced point defects (VSi and Sii) and the impurity atoms. The shape of the density profiles and the thickness of the transition surface layer obtained from the XRR data are different for the implanted ions. The [100] faceted surface features of the samples prepared by SIMOX technology are preserved after implantation with the ions. AFM revealed a reduction of the lateral correlation length. The magnitude of this effect depends on the chemical activity of the implanted ions. Silicon oxidation at a depth of 10–15 nm is shown by XPS to change depending on the implanted ion.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"59 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88464209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Crystalline silicon growth on aluminum substrate for photovoltaic application 光伏应用的铝基晶体硅生长

Physica Status Solidi (c) Pub Date : 2017-07-19 DOI: 10.1002/PSSC.201700173

P. Bellanger, S. B. Shivarudraiah, C. Leuvrey, A. Dinia, G. Schmerber, F. Jomard, A. Ulyashin, T. Fix, S. Roques, Florian Mugler, A. Slaoui

{"title":"Crystalline silicon growth on aluminum substrate for photovoltaic application","authors":"P. Bellanger, S. B. Shivarudraiah, C. Leuvrey, A. Dinia, G. Schmerber, F. Jomard, A. Ulyashin, T. Fix, S. Roques, Florian Mugler, A. Slaoui","doi":"10.1002/PSSC.201700173","DOIUrl":"https://doi.org/10.1002/PSSC.201700173","url":null,"abstract":"In this work, we investigate the direct formation of crystalline silicon thin films using ECR-PECVD process on aluminum substrates for solar cells applications. The aluminum substrate offers the advantages of being flexible and highly reflective in addition to serve as the back contact for the cell device. The substrates were pure aluminum or silicon rich aluminum sheets. Monocrystalline silicon substrates were used as reference substrates. Silane and hydrogen were used as precursor gases. Silicon growth was done at different substrate temperatures. The grown silicon films were characterized by Raman spectroscopy, SIMS and XRD techniques. Silicon thicknesses between 230 and 1370 nm were obtained on different types of aluminum substrates. The analyses show that the grown silicon films formed at 480 °C under SiH4: 40 sccm and H2 = 10 sccm are amorphous silicon at the initial stage and become nanocrystalline (nc-Si:H) as the deposition proceeds. The crystalline fraction of those films extracted from Raman spectra is found around 40–60% and XRD analysis shows grain silicon size between 41 and 83 A. Finally, SIMS analysis have revealed graded doping distribution profiles which is indicative of the formation of a nc-Si:H(i)/nc-Si:H (p+)/Al substrate, well suited for solar cell structures.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"50 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84470393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Cathodoluminescence study of killer defects in GaN wafers on sapphire substrates 蓝宝石衬底GaN晶圆杀伤缺陷的阴极发光研究

Physica Status Solidi (c) Pub Date : 2017-07-01 DOI: 10.1002/PSSC.201700054

T. Sekiguchi, Woong Lee, Xianjia Luo, T. Kimura, Yujin Cho

引用次数: 2

The beginning of wine and viticulture 葡萄酒和葡萄栽培的开端

Physica Status Solidi (c) Pub Date : 2017-07-01 DOI: 10.1002/pssc.201700008

S. Estreicher

引用次数: 7

Trapping and diffusion behaviour of hydrogen simulated with TCAD in projection range of carbon‐cluster implanted silicon epitaxial wafers for CMOS image sensors 用TCAD模拟了氢在CMOS图像传感器碳簇植入硅外延片投影范围内的俘获和扩散行为

Physica Status Solidi (c) Pub Date : 2017-07-01 DOI: 10.1002/PSSC.201700036

Ryosuke Okuyama, S. Shigematsu, R. Hirose, Ayumi Masada, T. Kadono, Yoshihiro Koga, Hidehiko Okuda, K. Kurita

{"title":"Trapping and diffusion behaviour of hydrogen simulated with TCAD in projection range of carbon‐cluster implanted silicon epitaxial wafers for CMOS image sensors","authors":"Ryosuke Okuyama, S. Shigematsu, R. Hirose, Ayumi Masada, T. Kadono, Yoshihiro Koga, Hidehiko Okuda, K. Kurita","doi":"10.1002/PSSC.201700036","DOIUrl":"https://doi.org/10.1002/PSSC.201700036","url":null,"abstract":"The trapping and diffusion behaviour of hydrogen in projection range of carbon-cluster was investigated by using a technology computer aided design (TCAD) simulation for high performance complementary metal–oxide–semiconductor (CMOS) image sensors. The hydrogen behaviour seemingly contributes to passivating the interface state density of the isolation region and process-induced defects during the CMOS image sensor fabrication process. This hydrogen behaviour was simulated by a TCAD simulation assuming a reaction model in which the cluster of carbon and silicon self-interstitial (carbon-interstitial cluster) binds to hydrogen. We found that the hydrogen profiles of TCAD agreed with the secondary ion mass spectrometry (SIMS) results after epitaxial growth and high-temperature heat-treatment, thus suggesting that the hydrogen in the projection range of the carbon cluster forms a binding state with the carbon-interstitial cluster. In addition, hydrogen gradually diffused out from the projection range of the carbon-cluster after high-temperature heat-treatment. Therefore, the hydrogen behaviour in projection range of the carbon-cluster is considered to contribute to the CMOS image sensor fabrication process to achieve high electrical performance.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"69 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88454583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

Development of fountain detectors for spectroscopy of secondary electron in SEM 扫描电镜中二次电子光谱喷泉探测器的研制

Physica Status Solidi (c) Pub Date : 2017-07-01 DOI: 10.1002/PSSC.201700057

T. Agemura, H. Iwai, T. Sekiguchi

引用次数: 2

Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons 0.9 MeV电子和15 MeV质子辐照下漂浮区n型硅中磷空位配合物开放空位体积的正电子探测

Physica Status Solidi (c) Pub Date : 2017-06-27 DOI: 10.1002/PSSC.201700120

N. Arutyunov, V. Emtsev, M. Elsayed, R. Krause-Rehberg, N. Abrosimov, G. Oganesyan, V. Kozlovski

{"title":"Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons","authors":"N. Arutyunov, V. Emtsev, M. Elsayed, R. Krause-Rehberg, N. Abrosimov, G. Oganesyan, V. Kozlovski","doi":"10.1002/PSSC.201700120","DOIUrl":"https://doi.org/10.1002/PSSC.201700120","url":null,"abstract":"For the first time the samples, cut from the same wafer of crystals of float-zone silicon, n−FZ−Si(P) and n−FZ−Si(Bi), were subjected to irradiation with 0.9-MeV electrons and 15-MeV protons at RT for studying them by low-temperature positron annihilation lifetime spectroscopy. Measurements of Hall effect have been used for the materials characterization. The discussion is focused on the open vacancy volume (Vop) of the thermally stable group-V-impurity-vacancy complexes comprising the phosphorus atoms; the bismuth-related vacancy complexes are briefly considered. The data of positron probing of PV pairs (E-centers), divacancies, and the thermally stable defects in the irradiated n−FZ−Si(P) materials are compared. Beyond a reliable detecting of the defect-related positron annihilation lifetime in the course of isochronal annealing at ∼ 500 °C, the recovery of concentration of phosphorus-related shallow donor states continues up to ∼650–700 °C. The open vacancy volumes Vop to be characterized by long positron lifetimes Δτ2 ∼271–289 ps in (gr.-V-atom)–Vop complexes are compared with theoretical data available for the vacancies, τ(V1), and divacancies, τ(V2). The extended semi-vacancies, 2Vs-ext, and relaxed vacancies, 2Vinw, are proposed as the open volume Vop in (gr.-V-atom)–Vop complexes. It is argued that at high annealing temperature the defect Ps–Vop–Ps is decomposed.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"30 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73921986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

A photo‐elastic microscopy study of the temperature dependency of stress induced by through silicon vias in silicon 硅中硅通孔引起的应力温度依赖性的光弹性显微镜研究

Physica Status Solidi (c) Pub Date : 2017-06-23 DOI: 10.1002/PSSC.201700028

M. Herms, M. Wagner, J. Messemaeker, I. Wolf

引用次数: 2

Study on defect annealing potential and bulk micro defect formation using high temperature RTA conditions for Cz‐grown silicon 高温RTA条件下Cz生长硅缺陷退火电位和本体微缺陷形成的研究

Physica Status Solidi (c) Pub Date : 2017-06-21 DOI: 10.1002/PSSC.201700119

T. Müller, M. Gehmlich, G. Kissinger, D. Kot, A. Sattler, Alfred Miller, E. Daub

引用次数: 2