Physica Status Solidi (c)最新文献_第8页

Optical properties and electronic structures of CuSbS 2 , CuSbSe 2 , and CuSb(S 1−x Se x ) 2 solid solution cusbs2、CuSbSe 2和CuSb(s1−x Se x) 2固溶体的光学性质和电子结构

Physica Status Solidi (c) Pub Date : 2017-06-01 DOI: 10.1002/PSSC.201600196

T. Wada, T. Maeda

{"title":"Optical properties and electronic structures of CuSbS\u0000 2\u0000 , CuSbSe\u0000 2\u0000 , and CuSb(S\u0000 1−x\u0000 Se\u0000 x\u0000 )\u0000 2\u0000 solid solution","authors":"T. Wada, T. Maeda","doi":"10.1002/PSSC.201600196","DOIUrl":"https://doi.org/10.1002/PSSC.201600196","url":null,"abstract":"To clarify electronic structures of CuSbS2, CuSbSe2, and CuSb(S1−xSex)2 solid solutions, these powder samples were synthesized by a mechanochemical process and post-heating. CuSbS2 and CuSbSe2 have indirect and direct band gaps, of which the direct band gaps are a little wider than the indirect band gaps. The ionization energies of CuSb(S1−xSex)2 (0.0 ≤ x ≤ 1.0) powders were measured by photoemission yield spectroscopy (PYS). Energy levels of the valence band maximum (VBM) of the CuSb(S1−xSex)2 samples were estimated from the ionization energies. The electron affinity, energy level of conduction band minimum (CBM), of the CuSb(S1−xSex)2 samples could also be determined by adding the value of the optical band gap to the energy level of the VBM. The energy level of the VBM of the CuSb(S1−xSex)2 system monotonically increases from −5.45 eV for CuSbS2 (x = 0.0) to −5.15 eV for CuSbSe2 (x = 1.0). On the other hand, the energy levels of the indirect CBM of the CuSb(S1−xSex)2 system slightly decrease from −4.05 eV for CuSbS2 to −4.11 eV for CuSbSe2. The energy levels of the direct CBM also slightly decrease from −4.00 eV for CuSbS2 to −4.07 eV for CuSbSe2. We show the band alignment of CuSbS2 (CuSbSe2)-based solar cells with a standard device structure of ZnO/CdS/CuSbS2 (CuSbSe2) absorber.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87778701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 29

Low band‐gap CuIn(S,Se) 2 thin film solar cells using molecular ink with 9.5% efficiency (Phys. Status Solidi C 6/2017) 使用分子墨水的低带隙CuIn(S,Se) 2薄膜太阳能电池效率为9.5%。Solidi C 6/2017)

Physica Status Solidi (c) Pub Date : 2017-06-01 DOI: 10.1002/PSSC.201770006

Yajie Wang, Xianzhong Lin, Lan Wang, T. Köhler, M. Lux‐Steiner, R. Klenk

引用次数: 0

X‐ray characterization of self‐organized periodic body‐centered tetragonal lattices of SiGe dots SiGe点自组织周期体心四边形晶格的X射线表征

Physica Status Solidi (c) Pub Date : 2017-05-31 DOI: 10.1002/PSSC.201700004

P. Zaumseil, Y. Yamamoto, G. Capellini

引用次数: 0

Optical and electronic properties of periodic Si nanostructures 周期性硅纳米结构的光学和电子性质

Physica Status Solidi (c) Pub Date : 2017-05-30 DOI: 10.1002/PSSC.201700093

A. Tavkhelidze, A. Bayramov, Y. Aliyeva, L. Jangidze, G. Skhiladze, S. Asadullayeva, O. Alekperov, N. Mamedov

{"title":"Optical and electronic properties of periodic Si nanostructures","authors":"A. Tavkhelidze, A. Bayramov, Y. Aliyeva, L. Jangidze, G. Skhiladze, S. Asadullayeva, O. Alekperov, N. Mamedov","doi":"10.1002/PSSC.201700093","DOIUrl":"https://doi.org/10.1002/PSSC.201700093","url":null,"abstract":"Nanogratings (NGs) on the surface of the top Si layer of a Si/SiO2/ substrate device structure were prepared using laser interference lithography. Electron transport, photoluminescence, and Raman scattering were then studied on the plain Si and NG Si structures to see the effect of NG introduction. As a result of NG-introduction and very likely G-doping maintenance, all samples studied in this work displayed a 2 to 3 order of magnitude reduction in resistivity for NG Si. The Hall coefficient indicated that electrons are main charge carriers that is also expected for exactly G-doping. Plain Si layer did not show any photoluminescence either for 532 nm (2.38 eV) or 325 nm (3.81 eV) laser excitation. A broad photoluminescence band, composed of a number of almost equidistant peaks was observed on NG Si layer between the photon energies 1.5 and 3.5 eV. Both Stocks and anti-Stocks components for 522.65 cm−1 phonons at room temperature were observed in the Raman spectra of NG Si layer. Estimated from the ratio between the intensities of Stocks and anti-Stocks components, the drop (if any) in phonon gas temperature below ambient (295 K) does not exceed 3 K.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"27 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83514094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Deep level centers in electron‐irradiated silicon crystals doped with copper at different temperatures 掺杂铜的电子辐照硅晶体在不同温度下的深能级中心

Physica Status Solidi (c) Pub Date : 2017-05-24 DOI: 10.1002/PSSC.201600267

N. Yarykin, J. Weber

{"title":"Deep level centers in electron‐irradiated silicon crystals doped with copper at different temperatures","authors":"N. Yarykin, J. Weber","doi":"10.1002/PSSC.201600267","DOIUrl":"https://doi.org/10.1002/PSSC.201600267","url":null,"abstract":"The effect of bombardment with energetic particles on the deep-level spectrum of copper-contaminated silicon wafers is studied by space charge spectroscopy methods. The p-type FZ-Si wafers were doped with copper in the temperature range of 645–750 °C and then irradiated with the 1015 cm−2 fluence of 5 MeV electrons at room temperature. Only the mobile Cui species and the CuPL centers are detected in significant concentrations in the non-irradiated Cu-doped wafers. The properties of the irradiated samples are found to qualitatively depend on the copper in-diffusion temperature Tdiff. For Tdiff > 700 °C, the irradiation partially reduces the Cui concentration and introduces additional CuPL centers while no standard radiation defects are detected. If Tdiff was below ∼700 °C, the irradiation totally removes the mobile Cui species. Instead, the standard radiation defects and their complexes with copper appear in the deep-level spectrum. A model for the defects reaction scheme during the irradiation is derived and discussed. \u0000 \u0000DLTS spectrum of the Cu-contaminated and then irradiated silicon qualitatively depends on the copper in-diffusion temperature.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91024687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Spectroscopic planar diffraction ellipsometry of Si‐based multilayer structure with subwavelength grating 基于亚波长光栅的硅基多层结构的平面衍射椭偏光谱

Physica Status Solidi (c) Pub Date : 2017-05-23 DOI: 10.1002/PSSC.201700092

N. Mamedov, A. Tavkhelidze, A. Bayramov, K. Akhmedova, Y. Aliyeva, G. Eyyubov, L. Jangidze, G. Skhiladze

引用次数: 5

Influence of irradiation on mechanical properties of Si‐Ge alloys 辐照对Si - Ge合金力学性能的影响

Physica Status Solidi (c) Pub Date : 2017-05-23 DOI: 10.1002/PSSC.201700123

A. Sichinava, G. Bokuchava, G. Chubinidze, N. Gapishvili, Giorgi Archuadze

引用次数: 0

High amplitude internal friction in monocrystalline germanium‐doped silicon 单晶掺锗硅的高振幅内摩擦

Physica Status Solidi (c) Pub Date : 2017-05-22 DOI: 10.1002/PSSC.201700107

I. Kurashvili, G. Darsavelidze, G. Bokuchava