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Physica Status Solidi (c)最新文献

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Interfacial and space charge dielectric effects in Polypyrrole/ZnO composites 聚吡咯/ZnO复合材料的界面和空间电荷介电效应
Physica Status Solidi (c) Pub Date : 2017-06-16 DOI: 10.1002/PSSC.201700001
A. N. Papathanassiou, I. Sakellis, E. Vitoratos, S. Sakkopoulos
{"title":"Interfacial and space charge dielectric effects in Polypyrrole/ZnO composites","authors":"A. N. Papathanassiou, I. Sakellis, E. Vitoratos, S. Sakkopoulos","doi":"10.1002/PSSC.201700001","DOIUrl":"https://doi.org/10.1002/PSSC.201700001","url":null,"abstract":"Polypyrrole/zinc oxide composites were studied by Broadband Dielectric Spectroscopy in the frequency range 10 mHz–1 MHz for temperatures ranging from 15 K to room temperature. Lowering temperature, the dc conductivity was suppressed revealing underlying dielectric relaxation mechanisms. For 20, 30 and 40 wt.% ZnO composites, a relaxation was detected in the vicinity of range 104–10­5 Hz. Its typical mean relaxation time and its concentration dependence are compatible with Sillar's model for interfacial polarization in heterogeneous matter. At high ZnO concentrtion, a low-frequency relaxation also appeared around 0.01–10 Hz, stemming from space charge polarization. The shift of the relaxation upon temperature provides an insight to the dynamics of relaxing charge entities. Composites consisting of 10 wt.% ZnO are most suitable optoelectronic material, as they combine good electrical conduction, low capacitance effects and ohmic sample-electrode contacts.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76271289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Luminescent and electrical properties of oxygen‐implanted silicon 氧注入硅的发光和电学性质
Physica Status Solidi (c) Pub Date : 2017-06-13 DOI: 10.1002/PSSC.201700114
D. Danilov, O. Vyvenko, A. Loshachenko, B. Ber, D. Kasantsev, N. Sobolev
{"title":"Luminescent and electrical properties of oxygen‐implanted silicon","authors":"D. Danilov, O. Vyvenko, A. Loshachenko, B. Ber, D. Kasantsev, N. Sobolev","doi":"10.1002/PSSC.201700114","DOIUrl":"https://doi.org/10.1002/PSSC.201700114","url":null,"abstract":"Light emitting diodes with an active defect-rich region produced by oxygen implantation and a subsequent multistep annealing of silicon wafers were investigated by means of transmission electron microscopy, SIMS, capacitance voltage, deep level transient spectroscopy, electroluminescence (EL), and cathodoluminescence (CL) techniques. The properties of two groups of n-based samples with and without thermal pre-treatment at 1000 °C for 15 min were compared regarding their defect structure, defects electrical activity, luminescent spectra as well as the impact of prolonged intense electron irradiation. The observed difference in the properties of such groups was explained by a difference in the density and oxygen content of oxygen-related defects. A significant distinction between EL and CL spectra at low excitation levels was found and interpreted to be due to particular defect kinds in near-surface and the deepest layers of the implanted region. The blue shift of EL spectra upon excitation increase reported previously is explained by the increase of penetration depth of the holes and specific depth distribution of the defects of different kinds.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84793497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Two‐stage mechanism of Zn nanoparticles formation in ZnO crystal by Nd:YAG laser radiation Nd:YAG激光在ZnO晶体中形成锌纳米颗粒的两阶段机制
Physica Status Solidi (c) Pub Date : 2017-06-13 DOI: 10.1002/PSSC.201700038
A. Medvids, L. Grase, P. Onufrijevs, H. Mimura, V. Yukhymchuk, G. Mežinskis
{"title":"Two‐stage mechanism of Zn nanoparticles formation in ZnO crystal by Nd:YAG laser radiation","authors":"A. Medvids, L. Grase, P. Onufrijevs, H. Mimura, V. Yukhymchuk, G. Mežinskis","doi":"10.1002/PSSC.201700038","DOIUrl":"https://doi.org/10.1002/PSSC.201700038","url":null,"abstract":"Zn nanoparticles characteristics like size and concentration can be tailored by laser irradiation. A pulsed Nd:YAG laser was operated at a wavelength of 266 nm, pulse duration of 3 ns, and a maximum intensity of 315.0 MW cm−2. Zinc nanoparticles formation is proposed to occur in two stages. In the first stage, Zn interstitials (Zni) are generated at the irradiated site. In the second stage, Zni agglomerate to increase the size of Zn nanoparticles up to 120 nm. Zni formation is implied from an increase in the electrical conductivity, but agglomeration occurs from heat treatment provided by laser irradiation. Single laser pulse irradiation creates small nanoparticles about 7 nm in size. Further laser pulses reduces the concentration of small nanoparticles and increases the size of nanoparticles up to 120 nm. The size and structure was observed by field emission scanning electron microscope and Raman spectroscopy. Topography and electrical conductivity was mapped by atomic force microscopy.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86639871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Ab initio study of electronic structure and magnetic properties of CoMnTaZ (Z = Si, Ge) quaternary Heusler compounds comtaz (Z = Si, Ge)季系Heusler化合物的电子结构和磁性能的从头算研究
Physica Status Solidi (c) Pub Date : 2017-06-13 DOI: 10.1002/PSSC.201700127
M. Attallah, M. Ibrir, Saadi Berri, S. Lakel
{"title":"Ab initio study of electronic structure and magnetic properties of CoMnTaZ (Z = Si, Ge) quaternary Heusler compounds","authors":"M. Attallah, M. Ibrir, Saadi Berri, S. Lakel","doi":"10.1002/PSSC.201700127","DOIUrl":"https://doi.org/10.1002/PSSC.201700127","url":null,"abstract":"The electronic structures and magnetic properties of CoMnTaSi and CoMnTaGe Heusler alloys with LiMgPbSb-type structure investigated firstly by using the first-principles calculations. We have applied the full-potential linearized augmented plane waves plus local orbitals (FP-L/APW+LO) method. Exchange-correlation effects are treated using the generalized gradient approximations GGA and GGA+U. The GGA calculation shows the CoMnTaSi and CoMnTaGe compounds at its equilibrium lattice constant are HM ferromagnet with an indirect band gap Γ → X of 0.34 and 0.39 eV and a HM gap of 0.34 and 0.13 eV in the spin-down channel. The CoMnTaZ (Z = Si, Ge) compounds have an integer total magnetic moment of 1.00 μB, satisfying the Slater–Pauling rule mtot = (Nv − 24). The similar results are also obtained by GGA+U calculation. Therefore, these new materials are good candidates for potential applications in spintronic.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"21 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75488093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Quartz modification by Zn ion implantation and swift Xe ion irradiation Zn离子注入和快速Xe离子辐照改性石英
Physica Status Solidi (c) Pub Date : 2017-06-06 DOI: 10.1002/PSSC.201700112
V. Privezentsev, V. Kulikauskas, A. Didyk, V. Skuratov, E. Steinman, A. Tereshchenko, N. N. Kolesnikov, A. Trifonov, O. Sakharov, S. Ksenich
{"title":"Quartz modification by Zn ion implantation and swift Xe ion irradiation","authors":"V. Privezentsev, V. Kulikauskas, A. Didyk, V. Skuratov, E. Steinman, A. Tereshchenko, N. N. Kolesnikov, A. Trifonov, O. Sakharov, S. Ksenich","doi":"10.1002/PSSC.201700112","DOIUrl":"https://doi.org/10.1002/PSSC.201700112","url":null,"abstract":"The quartz slides were implanted by 64Zn+ ions with dose of 5 × 1016/cm2 and energy of 100 keV. After implantation, the amorphous metallic Zn nanoparticles with an average radius of 3.5 nm were created. The sample surface becomes nonuniform, its roughness is increased and its values rise up to 6 nm compared to virgin state, and the roughness maximum is at a value of about 0.8 nm. The surface is made up of valleys and hillocks which have a round shape with an average diameter about 200 nm. At the center of these hillocks are pores with a depth up to 6 nm and a diameter of about 20 nm. After implantation in UV-vis diapason, the optical transmission decreases while PL peak (apparently due to oxygen deficient centers) at wavelength of 400 nm increases. Then the samples were subjected to swift Xe ion irradiation with the fluences of 1 × 1012–7.5 × 1014/cm2 and energy of 167 MeV. After Xe irradiation, the sample surface roughness shat down to values of 0.5 nm and the roughness maximum is at a value of about 0.1 nm. Optical transmission in UV-vis diapason increases. The PL peak at wavelength of 400 nm is decreased while a PL peak at wavelength of 660 nm is raised. This peak is presumably due to non-bridging oxygen hole centers or/and NPs with structure Si(core)/SiO2(shell). \u0000 \u0000HRTEM image of Zn-implanted quartz subsurface layer. One can see the Zn amorphous nanoparticles, which confirms the electron diffraction pattern (insert).","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"25 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90938816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two‐particle self‐consistent analysis for the electron‐hole asymmetry of superconductivity in cuprate superconductors 铜超导体中电子空穴不对称性的二粒子自一致分析
Physica Status Solidi (c) Pub Date : 2017-06-01 DOI: 10.1002/pssc.201600157
D. Ogura, K. Kuroki
{"title":"Two‐particle self‐consistent analysis for the electron‐hole asymmetry of superconductivity in cuprate superconductors","authors":"D. Ogura, K. Kuroki","doi":"10.1002/pssc.201600157","DOIUrl":"https://doi.org/10.1002/pssc.201600157","url":null,"abstract":"","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"155 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78510976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electronic structure of Cu2ZnSn(SxSe1−x)4 surface and CdS/Cu2ZnSn(SxSe1−x)4 interface Cu2ZnSn(SxSe1−x)4表面和CdS/Cu2ZnSn(SxSe1−x)4界面的电子结构
Physica Status Solidi (c) Pub Date : 2017-06-01 DOI: 10.1002/PSSC.201600178
Yusuke Udaka, Shin’ichi Takaki, Keisuke Isowaki, T. Nagai, K. Kim, Shinho Kim, H. Tampo, H. Shibata, K. Matsubara, S. Niki, N. Sakai, T. Kato, H. Sugimoto, N. Terada
{"title":"Electronic structure of Cu2ZnSn(SxSe1−x)4 surface and CdS/Cu2ZnSn(SxSe1−x)4 interface","authors":"Yusuke Udaka, Shin’ichi Takaki, Keisuke Isowaki, T. Nagai, K. Kim, Shinho Kim, H. Tampo, H. Shibata, K. Matsubara, S. Niki, N. Sakai, T. Kato, H. Sugimoto, N. Terada","doi":"10.1002/PSSC.201600178","DOIUrl":"https://doi.org/10.1002/PSSC.201600178","url":null,"abstract":"Changes of the electronic structure of the Cu2ZnSn(SxSe1−x)4 [CZTSSe] films and the band alignment at the interfaces between CdS buffer and the CZTSSe in conjunction with the anion-mixing ratio x = 0–1 have been investigated using in situ X-ray, ultraviolet photoemission spectroscopy (XPS, UPS), and inverse photoemission spectroscopy (IPES). Changes of the UPS and IPES spectra in conjunction with x have revealed that the electronic structure of the CZTSSe surface is characterized with the preferential rise of conduction band minimum (CBM) in conjunction with the increase of x. As x increases, interface induced band bending decreases from 0.5 to 0.6 at the CdS/CZTSe (x = 0) interface to 0.1–0.2 at the CdS/CZTS (x = 1) one. And the downward shift of CBM due to the deposition of the CdS layer is enhanced as x increases. These changes result in the monotonous decrease of conduction band offset (CBO) in conjunction with the increase of x: CBO at the x = 0 and 1 interfaces are +0.5 and −0.14 to −0.15 eV, respectively. The values of CBO are consistent with the device properties; occasional emergence of double junction like current–voltage characteristics in the CdS/CZTSe-based cells, serious voltage-loss in the CdS/CZTS ones, and the highest performance achieved in the CdS/CZTSSe ones.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"61 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83146492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Phase transformation during simultaneous chalcogenization of CuIn(S,Se) 2 thin films using metalorganic sources 金属有机源CuIn(S,Se) 2薄膜同步硫化过程中的相变
Physica Status Solidi (c) Pub Date : 2017-06-01 DOI: 10.1002/PSSC.201600159
R. Shoji, Y. Kayama, S. Chichibu, M. Sugiyama
{"title":"Phase transformation during simultaneous chalcogenization of CuIn(S,Se)\u0000 2\u0000 thin films using metalorganic sources","authors":"R. Shoji, Y. Kayama, S. Chichibu, M. Sugiyama","doi":"10.1002/PSSC.201600159","DOIUrl":"https://doi.org/10.1002/PSSC.201600159","url":null,"abstract":"Simultaneous chalcogenization of CuIn(Sy,Se1-y)2 (CISSe) thin films has been demonstrated using organometallic sources such as diethylselenide [(C2H5)2Se] and ditertiarybutylsulfide [(t-C4H9)2S] to obtain homogeneous CISSe pseudobinary alloys with controlled amounts of Se and S species. Low-temperature chalcogenization at 300 °C resulted in the formation of Cu-SSe and In-SSe alloys diffused into the Cu11In9 metallic precursor. On the other hand, high-temperature chalcogenization produced CISSe thin films without additional phases. The obtained results can be used for elucidating the mechanism of simultaneous chalcogenization and development of high-performance and cost-effective commercial applications.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"37 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89780496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Site selective doping of Zn for the p ‐type Cu(In,Ga)Se 2 thin film for solar cell application 太阳能电池用p型Cu(In,Ga)Se 2薄膜Zn的选择性掺杂
Physica Status Solidi (c) Pub Date : 2017-06-01 DOI: 10.1002/PSSC.201600170
S. Shirakata
{"title":"Site selective doping of Zn for the\u0000 p\u0000 ‐type Cu(In,Ga)Se\u0000 2\u0000 thin film for solar cell application","authors":"S. Shirakata","doi":"10.1002/PSSC.201600170","DOIUrl":"https://doi.org/10.1002/PSSC.201600170","url":null,"abstract":"Selective doping of a Zn impurity at the group III site in a Cu(In, Ga)Se2 (CIGS) film was performed by the doping of Zn at the first stage of the three-stage method. The p-type CIGS:Zn film was obtained, which is in contrast to the n-type CIGS:Zn film obtained by the Zn impurity doping at the second and third-stages. Based on excitation intensity dependence of photoluminescence (PL) at low-temperature, the change in the acceptor level was observed. The enhancement of carrier concentration as a result of Zn-doping in the p-type CIGS:Zn film was observed. The CIGS:Zn solar cells exhibited η of 14.5% and Voc of 0.658 V, which are higher than that of the corresponding solar cells using the undoped CIGS films","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"47 4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89046110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Yb valence state in Yb5Rh4Ge10 Yb5Rh4Ge10中Yb的价态
Physica Status Solidi (c) Pub Date : 2017-06-01 DOI: 10.1002/PSSC.201600164
H. Sato, Y. Utsumi, K. Katoh, K. Mimura, S. Ueda, H. Yamaoka, A. Rousuli, M. Arita, K. Umeo, K. Shimada, H. Namatame, M. Taniguchi
{"title":"Yb valence state in Yb5Rh4Ge10","authors":"H. Sato, Y. Utsumi, K. Katoh, K. Mimura, S. Ueda, H. Yamaoka, A. Rousuli, M. Arita, K. Umeo, K. Shimada, H. Namatame, M. Taniguchi","doi":"10.1002/PSSC.201600164","DOIUrl":"https://doi.org/10.1002/PSSC.201600164","url":null,"abstract":"Temperature- and pressure-dependent Yb valence state in Yb5Rh4Ge10 has been investigated by means of Yb 3d hard X-ray photoemission spectroscopy (HAXPES) and Yb L3 absorption spectroscopy (XAS). The mean Yb valence derived from the Yb 3d HAXPES is estimated to be ∼2.78 at 300 K and decreases to ∼2.74 at 20 K. On the other hand, the Yb valence deduced from the Yb L3 XAS at 300 K is almost constant with ∼2.81 in the pressure range between 9.2 and 34.7 GPa.","PeriodicalId":20065,"journal":{"name":"Physica Status Solidi (c)","volume":"32 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80029411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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