Ab initio study of electronic structure and magnetic properties of CoMnTaZ (Z = Si, Ge) quaternary Heusler compounds

M. Attallah, M. Ibrir, Saadi Berri, S. Lakel
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引用次数: 2

Abstract

The electronic structures and magnetic properties of CoMnTaSi and CoMnTaGe Heusler alloys with LiMgPbSb-type structure investigated firstly by using the first-principles calculations. We have applied the full-potential linearized augmented plane waves plus local orbitals (FP-L/APW+LO) method. Exchange-correlation effects are treated using the generalized gradient approximations GGA and GGA+U. The GGA calculation shows the CoMnTaSi and CoMnTaGe compounds at its equilibrium lattice constant are HM ferromagnet with an indirect band gap Γ → X of 0.34 and 0.39 eV and a HM gap of 0.34 and 0.13 eV in the spin-down channel. The CoMnTaZ (Z = Si, Ge) compounds have an integer total magnetic moment of 1.00 μB, satisfying the Slater–Pauling rule mtot = (Nv − 24). The similar results are also obtained by GGA+U calculation. Therefore, these new materials are good candidates for potential applications in spintronic.
comtaz (Z = Si, Ge)季系Heusler化合物的电子结构和磁性能的从头算研究
采用第一性原理计算方法研究了具有limgpbsb型结构的CoMnTaSi和contage Heusler合金的电子结构和磁性能。我们应用了全势线性化增广平面波加局部轨道(FP-L/APW+LO)方法。利用广义梯度近似GGA和GGA+U处理交换相关效应。GGA计算表明,CoMnTaSi和CoMnTaGe化合物在其平衡晶格常数下为HM铁磁体,其间接带隙Γ→X分别为0.34和0.39 eV,自旋下通道的HM隙分别为0.34和0.13 eV。comtaz (Z = Si, Ge)化合物的总磁矩为1.00 μB,满足sllater - pauling规则mtot = (Nv−24)。GGA+U计算也得到了类似的结果。因此,这些新材料在自旋电子领域具有潜在的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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