{"title":"Area-I/O RDL routing for chip-package codesign considering regional assignment","authors":"Kun-Sheng Lin, H. Hsu, R. Lee, Hung-Ming Chen","doi":"10.1109/EDAPS.2010.5683021","DOIUrl":"https://doi.org/10.1109/EDAPS.2010.5683021","url":null,"abstract":"Flip-Chip package provides high density I/Os and better performance in package size, signal/power integrety, and wirelength. Routing on its Re-Distribution Layer (RDL) is one of the most difficult stage in Flip-Chip packaging due to the increasing number of I/Os in modern VLSI designs. Area I/O can shorten the signal path and further increases the I/O density, but the design complexity is also higher. The Area I/O RDL routing problem is introduced in this paper, considering wirelength minimization and chip-package codesign. The proposed algorithm effectively solves the problem. 100% routability is guaranteed, from block ports to I/O pads and from I/O pads to bump pads. The authors propose the concept of regional assignment to evaluate the skew between bumps and balls. It leads the nets to route within neighbor sectors rather than the opposite sector. The experimental results, on 7 industrial designs, show that the router greatly minimizes bump-ball skew compared with [12], with reasonable extra wirelength.","PeriodicalId":185326,"journal":{"name":"2010 IEEE Electrical Design of Advanced Package & Systems Symposium","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134010355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Noise improvement of 3–5GHz CMOS UWB LNA","authors":"Chia-Chien Li, Yi-Chen Chen, Jeng-Rern Yang","doi":"10.1109/EDAPS.2010.5683009","DOIUrl":"https://doi.org/10.1109/EDAPS.2010.5683009","url":null,"abstract":"A single inductor matching network that carried low noise is designed to achieve the input wideband matching. This way has lower complexity that reduces chip area and holds the good reflection coefficient. Besides, the current reuse technique was used to achieve low power consumption. The design is simulated by Taiwan Semiconductor Manufacturing Company (TSMC) 0.18µm RF CMOS process. Through a 1V/5.56mA supply, The measurement results show that the LNA achieved the maximum gain of 14.5dB with gain flatness ± 0.35dB; input return loss lower than −10dB; and a minimum noise figure 2.9dB in 3∼5 GHz.","PeriodicalId":185326,"journal":{"name":"2010 IEEE Electrical Design of Advanced Package & Systems Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130431164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A simple & cost-effective novel methodology for predicting SSN system performance for different PCB trace lengths","authors":"C. Ang, Wei Wei Lo, M. Wong","doi":"10.1109/EDAPS.2010.5683031","DOIUrl":"https://doi.org/10.1109/EDAPS.2010.5683031","url":null,"abstract":"High data rates, high clock speeds, and low power consumption are synonymous with advanced electronic devices. Consequently, simultaneous switching noise (SSN) is emerging as a critical side-effect of toggling signals within an electronic device because SSN affects signal integrity. Even minute changes in signal voltage in the order of a few millivolts can adversely affect the functioning of a circuit. A PCB typically forms the communication backbone between electronic components including field programmable gate array (FPGA) devices. Signal quality and SSN effects vary with PCB trace lengths. Traditionally, complex board models are used to simulate the SSN characteristics of electronic devices for different PCBs, which can be time consuming and expensive. This paper presents a cost-effective novel methodology for de-embedding the PCB trace effect to accurately characterize an FPGA device's intrinsic SSN characteristics. The methodology uses simple and fast measurement and simulation techniques to de-embed the PCB trace effect for different PCB trace lengths. The predicted SSN data for different PCB trace lengths and intrinsic SSN data obtained using this methodology will be useful to FPGA system designers.","PeriodicalId":185326,"journal":{"name":"2010 IEEE Electrical Design of Advanced Package & Systems Symposium","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134315347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A dual-band filter using stepped-impedance resonator (SIR) embedded into substrate integrated waveguide (SIW)","authors":"Linsheng Wu, J. Mao, W. Yin, Yong-xin Guo","doi":"10.1109/EDAPS.2010.5683025","DOIUrl":"https://doi.org/10.1109/EDAPS.2010.5683025","url":null,"abstract":"A new hybrid-integrated dual-band filter is proposed for WLAN application, where the lower passband is implemented by a pair of stepped-impedance resonators (SIRs) and the higher passband is provided by two substrate integrated waveguide (SIW) cavities. In our design, the SIRs are embedded into the SIWs to reduce the size. The relationship between the parasitic resonances of SIW structure and the locations of its transmission zeros is studied. Its good performances have been demonstrated by the simulated and measured S-parameters.","PeriodicalId":185326,"journal":{"name":"2010 IEEE Electrical Design of Advanced Package & Systems Symposium","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116846908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Origins of electromagnetic immunity holes of microcontrollers","authors":"Tao Su, T. Steinecke, M. Unger","doi":"10.1109/EDAPS.2010.5683027","DOIUrl":"https://doi.org/10.1109/EDAPS.2010.5683027","url":null,"abstract":"This paper describes the origins of one kind of the degradation of the electromagnetic immunity of microcontrollers. That immunityy degradation is strongly frequency dependent. They appear like holes in immunity-frequency curve. Mechanism based on resonance in two types of current loops is introduced to explain the formation of those immunity holes. Measurement results are given to support the introduced theory.","PeriodicalId":185326,"journal":{"name":"2010 IEEE Electrical Design of Advanced Package & Systems Symposium","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132490107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wensheng Zhao, Xiao-Peng Wang, Xiao-Long Xu, W. Yin
{"title":"Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs","authors":"Wensheng Zhao, Xiao-Peng Wang, Xiao-Long Xu, W. Yin","doi":"10.1109/EDAPS.2010.5683012","DOIUrl":"https://doi.org/10.1109/EDAPS.2010.5683012","url":null,"abstract":"An equivalent lumped-element circuit model of coaxial TSV is proposed in this paper, in which both frequency- and temperature-dependent elements are extracted using the partial-element equivalent-circuit (PEEC) method. One important aspect of coaxial TSV modelling is its capacitance extraction, in which MOS effects are taken into account. The circuit model is also reduced to a transmission line one, with its transmission characteristics predicted theoretically for the silicon material but with different resistivities.","PeriodicalId":185326,"journal":{"name":"2010 IEEE Electrical Design of Advanced Package & Systems Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114485955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Pak, Joohee Kim, Jonghyun Cho, Junho Lee, Hyungdong Lee, Kunwoo Park, Joungho Kim
{"title":"On-chip PDN design effects on 3D stacked on-chip PDN impedance based on TSV interconnection","authors":"J. Pak, Joohee Kim, Jonghyun Cho, Junho Lee, Hyungdong Lee, Kunwoo Park, Joungho Kim","doi":"10.1109/EDAPS.2010.5682994","DOIUrl":"https://doi.org/10.1109/EDAPS.2010.5682994","url":null,"abstract":"This paper presents the analyses of 3D (3 Dimensional) stacked on-chip PDN (Power Distribution Network) impedances, which are composed with on-chip PDNs and TSV (Through Silicon Via) interconnections, and show the various features depending on on-chip PDN designs and 3D stacked chip configurations. Multi-stacked on-chip PDNs with very large capacitances interacting with even very small inductive TSV interconnections induces high PDN impedance peaks in GHz range, where single chip-PDN shows low PDN impedance. As multi-stacked on-chip PDN has larger capacitance, the high PDN impedance peaks appear at lower frequency range due to the relation of on-chip PDN capacitance and TSV inductance. Therefore, analysis and evaluation of on-chip PDN are very important to design 3D stacked chip. First, PDN impedance of single meshed type on-chip PDN is evaluated by the proposed on-chip PDN model and the measurement. Second, by using the evaluated on-chip PDN impedances and simple inductor model of TSV, the PDN impedances of 3D stacked on-chip PDNs is analyzed in consideration with the various on-chip PDN designs and stacked on-chip PDN numbers.","PeriodicalId":185326,"journal":{"name":"2010 IEEE Electrical Design of Advanced Package & Systems Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128630258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Wideband transitions for wafer level MEMS packages","authors":"Y. Lim, A. Yu, Bangtao Chen","doi":"10.1109/EDAPS.2010.5683016","DOIUrl":"https://doi.org/10.1109/EDAPS.2010.5683016","url":null,"abstract":"This paper presents the design and modelling results for 0-level MEMS packaging structure. The effect of varying the sealing height, sealing width and cavity height on the transmission line loss is considered over broadband and some guidelines provided. Transition optimizations to improve for the impedance mismatch pertaining to both BCB seal and frit seal is also considered. The optimized transition is applicable for broadband applications up to 20 GHz.","PeriodicalId":185326,"journal":{"name":"2010 IEEE Electrical Design of Advanced Package & Systems Symposium","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128634055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hajin Sung, Eakhwan Song, M. Kim, Yujeong Shim, Sunkyu Kong, J. Kwon, Joungho Kim
{"title":"Design of toroidal current probe embedded in multi-layer printed circuit boards for electrostatic discharge(ESD) detection","authors":"Hajin Sung, Eakhwan Song, M. Kim, Yujeong Shim, Sunkyu Kong, J. Kwon, Joungho Kim","doi":"10.1109/EDAPS.2010.5682996","DOIUrl":"https://doi.org/10.1109/EDAPS.2010.5682996","url":null,"abstract":"In this paper, we propose a novel toroidal current probe embedded in multi-layer printed circuit boards (PCBs) for electrostatic discharge (ESD) detection. The proposed current probe consists of an inner via-array, bridge lines, and an outer via-array, which surround an ESD current path and form a toroid to detect an ESD current. A transfer impedance between a port injected an ESD current and the proposed current probe is used for analysis of an ESD current coupling. Through experimental measurements, we verified the proposed current probe by comparison with a conventional current probe.","PeriodicalId":185326,"journal":{"name":"2010 IEEE Electrical Design of Advanced Package & Systems Symposium","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133955263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hu Ji-gang, J. Long, Jiang Wan-bing, Yang Shi-zhao
{"title":"Design and simulation of a compact novel LTCC antenna for integrated Bluetooth applications","authors":"Hu Ji-gang, J. Long, Jiang Wan-bing, Yang Shi-zhao","doi":"10.1109/EDAPS.2010.5682995","DOIUrl":"https://doi.org/10.1109/EDAPS.2010.5682995","url":null,"abstract":"A compact novel antenna for Bluetooth or wireless LAN applications by low-temperature co-fired ceramic (LTCC) tochnology is presented in this paper. The novel antenna is composed of stacked meander, helix structures, and multi-layer parasitic patches are employed to miniaturize the antenna. The simulated results show that the proposed antenna, having compact size of 3.2×1.6×1.2mm3, has a bandwidth of 60MHZ (VSWR<3:1) and a maximum gain of 0.5dBi, realizes omnidirectional radiation patterns across the whole operating frequency band.","PeriodicalId":185326,"journal":{"name":"2010 IEEE Electrical Design of Advanced Package & Systems Symposium","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117220145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}