Noise improvement of 3–5GHz CMOS UWB LNA

Abstract

A single inductor matching network that carried low noise is designed to achieve the input wideband matching. This way has lower complexity that reduces chip area and holds the good reflection coefficient. Besides, the current reuse technique was used to achieve low power consumption. The design is simulated by Taiwan Semiconductor Manufacturing Company (TSMC) 0.18µm RF CMOS process. Through a 1V/5.56mA supply, The measurement results show that the LNA achieved the maximum gain of 14.5dB with gain flatness ± 0.35dB; input return loss lower than −10dB; and a minimum noise figure 2.9dB in 3∼5 GHz.