{"title":"用于晶圆级MEMS封装的宽带转换","authors":"Y. Lim, A. Yu, Bangtao Chen","doi":"10.1109/EDAPS.2010.5683016","DOIUrl":null,"url":null,"abstract":"This paper presents the design and modelling results for 0-level MEMS packaging structure. The effect of varying the sealing height, sealing width and cavity height on the transmission line loss is considered over broadband and some guidelines provided. Transition optimizations to improve for the impedance mismatch pertaining to both BCB seal and frit seal is also considered. The optimized transition is applicable for broadband applications up to 20 GHz.","PeriodicalId":185326,"journal":{"name":"2010 IEEE Electrical Design of Advanced Package & Systems Symposium","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Wideband transitions for wafer level MEMS packages\",\"authors\":\"Y. Lim, A. Yu, Bangtao Chen\",\"doi\":\"10.1109/EDAPS.2010.5683016\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design and modelling results for 0-level MEMS packaging structure. The effect of varying the sealing height, sealing width and cavity height on the transmission line loss is considered over broadband and some guidelines provided. Transition optimizations to improve for the impedance mismatch pertaining to both BCB seal and frit seal is also considered. The optimized transition is applicable for broadband applications up to 20 GHz.\",\"PeriodicalId\":185326,\"journal\":{\"name\":\"2010 IEEE Electrical Design of Advanced Package & Systems Symposium\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Electrical Design of Advanced Package & Systems Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDAPS.2010.5683016\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Electrical Design of Advanced Package & Systems Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDAPS.2010.5683016","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wideband transitions for wafer level MEMS packages
This paper presents the design and modelling results for 0-level MEMS packaging structure. The effect of varying the sealing height, sealing width and cavity height on the transmission line loss is considered over broadband and some guidelines provided. Transition optimizations to improve for the impedance mismatch pertaining to both BCB seal and frit seal is also considered. The optimized transition is applicable for broadband applications up to 20 GHz.
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