Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Abstract

An equivalent lumped-element circuit model of coaxial TSV is proposed in this paper, in which both frequency- and temperature-dependent elements are extracted using the partial-element equivalent-circuit (PEEC) method. One important aspect of coaxial TSV modelling is its capacitance extraction, in which MOS effects are taken into account. The circuit model is also reduced to a transmission line one, with its transmission characteristics predicted theoretically for the silicon material but with different resistivities.