Wensheng Zhao, Xiao-Peng Wang, Xiao-Long Xu, W. Yin
{"title":"Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs","authors":"Wensheng Zhao, Xiao-Peng Wang, Xiao-Long Xu, W. Yin","doi":"10.1109/EDAPS.2010.5683012","DOIUrl":null,"url":null,"abstract":"An equivalent lumped-element circuit model of coaxial TSV is proposed in this paper, in which both frequency- and temperature-dependent elements are extracted using the partial-element equivalent-circuit (PEEC) method. One important aspect of coaxial TSV modelling is its capacitance extraction, in which MOS effects are taken into account. The circuit model is also reduced to a transmission line one, with its transmission characteristics predicted theoretically for the silicon material but with different resistivities.","PeriodicalId":185326,"journal":{"name":"2010 IEEE Electrical Design of Advanced Package & Systems Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Electrical Design of Advanced Package & Systems Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDAPS.2010.5683012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
An equivalent lumped-element circuit model of coaxial TSV is proposed in this paper, in which both frequency- and temperature-dependent elements are extracted using the partial-element equivalent-circuit (PEEC) method. One important aspect of coaxial TSV modelling is its capacitance extraction, in which MOS effects are taken into account. The circuit model is also reduced to a transmission line one, with its transmission characteristics predicted theoretically for the silicon material but with different resistivities.