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2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)最新文献

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Enhancement of light transmittance for wafers bonded with thin Al films using atomic diffusion bonding and subsequent laser irradiation 利用原子扩散键合和后续激光照射增强铝薄膜晶圆的透光性
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947402
M. Ichikawa, N. Eboshi, T. Kemmochi, M. Sano, T. Mukai, M. Uomoto, T. Shimatsu
{"title":"Enhancement of light transmittance for wafers bonded with thin Al films using atomic diffusion bonding and subsequent laser irradiation","authors":"M. Ichikawa, N. Eboshi, T. Kemmochi, M. Sano, T. Mukai, M. Uomoto, T. Shimatsu","doi":"10.23919/LTB-3D.2017.7947402","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947402","url":null,"abstract":"Enhancement of light transmittance was examined for sapphire or synthetic quartz glass wafers bonded with thin Al films using atomic diffusion bonding (ADB). The results indicate that the thin Al film at the bonded interface diffuses into the wafer by subsequent laser irradiation, which enhances the light transmittance through the bonded interface.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"130 9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129171927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bond strength of 3D-stacked monocrystalline silicon X-ray mirrors 3d堆叠单晶硅x射线镜的结合强度
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947410
D. Girou, B. Landgraf, Ramses Guenther, M. Collon, M. Beijersbergen
{"title":"Bond strength of 3D-stacked monocrystalline silicon X-ray mirrors","authors":"D. Girou, B. Landgraf, Ramses Guenther, M. Collon, M. Beijersbergen","doi":"10.23919/LTB-3D.2017.7947410","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947410","url":null,"abstract":"This paper investigates the bond strength of flat directly-bonded structured monocrystalline silicon X-ray mirrors. We report on the sample manufacturing method and tensile strength testing measurements used to study the influence of annealing.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116284834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fracture behavior of the Σ13 grain boundary of α-alumina α-氧化铝Σ13晶界断裂行为
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947459
E. Tochigi, A. Ishihara, S. Kondo, N. Shibata, Y. Ikuhara
{"title":"Fracture behavior of the Σ13 grain boundary of α-alumina","authors":"E. Tochigi, A. Ishihara, S. Kondo, N. Shibata, Y. Ikuhara","doi":"10.23919/LTB-3D.2017.7947459","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947459","url":null,"abstract":"Fracture behavior of a grain boundary of alumina was observed by nanoindentation in a transmission electron microscope (TEM). Furthermore, the fracture surfaces were observed at the atomic level by scanning TEM. We discuss the fracture behavior of the grain boundary in terms of its atomic structure.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124528715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tackling low temperature bonding in fine pitch applications 解决低温粘接在小间距应用
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947437
H. Oppermann, K. Lang
{"title":"Tackling low temperature bonding in fine pitch applications","authors":"H. Oppermann, K. Lang","doi":"10.23919/LTB-3D.2017.7947437","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947437","url":null,"abstract":"Fine pitch flip chip applications and small sealing ring structures are demanding for metal interconnects. Thermocompression bonding requires higher temperature. Examples are shown how to reduce bonding temperatures in different applications.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123829122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-temperature solder bonding and thin film encapsulation for wafer level packaged MEMS aiming at harsh environment 针对恶劣环境的晶圆级封装MEMS的低温焊接和薄膜封装
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947408
Chengkuo Lee
{"title":"Low-temperature solder bonding and thin film encapsulation for wafer level packaged MEMS aiming at harsh environment","authors":"Chengkuo Lee","doi":"10.23919/LTB-3D.2017.7947408","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947408","url":null,"abstract":"Low temperature eutectic solder as an intermediate layer materials for wafer bonding based MEMS packaging, and thin film encapsulation for wafer level vacuum packaging are reviewed. Wafer level vacuum packaging technologies for MEMS micromirrors, micro-relays and NEMS switches are investigated.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117237431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Next generation computing systems with heterogeneous packaging integration 具有异构封装集成的下一代计算系统
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947441
J. Knickerbocker
{"title":"Next generation computing systems with heterogeneous packaging integration","authors":"J. Knickerbocker","doi":"10.23919/LTB-3D.2017.7947441","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947441","url":null,"abstract":"IBM Research and Micro-System Technology and Solutions Team are enabling next generation computing systems with heterogeneous packaging integration that support both large size / high performance systems and also support miniaturized / low power mobile wireless systems / sensors.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"2009 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125599354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wafer bonding defects inspection by IR microphotoelasticity in reflection mode 反射模式下红外微光弹性晶圆键合缺陷检测
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947415
A. Bosseboeuf, J. Rizzi, P. Coste, C. Bessouet
{"title":"Wafer bonding defects inspection by IR microphotoelasticity in reflection mode","authors":"A. Bosseboeuf, J. Rizzi, P. Coste, C. Bessouet","doi":"10.23919/LTB-3D.2017.7947415","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947415","url":null,"abstract":"It is demonstrated that high quality stress-induced birefringence maps in silicon with a high lateral resolution can be obtained by microphotoelasticity in reflection mode at wavelength of 1.31 μm. This technique was applied to inspection of Si-Si wafer bonding defects with variable magnifications. It is shown that defects with an apparent size as small as 20μm in diameter can be observed with a 2μm lateral resolution.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"223 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124438720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Room temperature bonding of InGaAs wafers using thin Ge films 使用Ge薄膜的InGaAs晶圆室温键合
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947446
M. Uomoto, Y. Yamada, T. Hoshi, M. Nada, T. Shimatsu
{"title":"Room temperature bonding of InGaAs wafers using thin Ge films","authors":"M. Uomoto, Y. Yamada, T. Hoshi, M. Nada, T. Shimatsu","doi":"10.23919/LTB-3D.2017.7947446","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947446","url":null,"abstract":"Room temperature bonding of InGaAs wafers using thin Ge films was studied. Wafers were bonded even with 0.5 nm thick Ge film on each side. Bonded wafers showed strong bonding force after annealing at 340 oC, with no vacancy at the bonded interface in TEM images.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133999511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interface properties of surface activated bonded CNT bumps and Au substrate 表面活化碳纳米管凸点与Au衬底的界面特性
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947450
M. Fujino, T. Suga
{"title":"Interface properties of surface activated bonded CNT bumps and Au substrate","authors":"M. Fujino, T. Suga","doi":"10.23919/LTB-3D.2017.7947450","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947450","url":null,"abstract":"CNT bumps were bonded to Au substrate by surface activated bonding with/without Au sputtering, and the interconnect resistance was compared. As result, the Au sputtered CNT bumps can reduce the interconnect resistance because of enlarging contact area of CNT/Au, and also their conjugation.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126346596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advanced packaging for wide band gap power semiconductors 宽带隙功率半导体的先进封装
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947427
G. Feix
{"title":"Advanced packaging for wide band gap power semiconductors","authors":"G. Feix","doi":"10.23919/LTB-3D.2017.7947427","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947427","url":null,"abstract":"This paper explains the constraints for the use of very fast switching, wide band gap power semiconductors like silicon carbide (SiC) and gallium nitride (GaN) given in standard wire bonded power modules. Furthermore, a way to make full use of them by using an advanced packaging method is given here.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125732860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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