2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)最新文献

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Temperature dependence of fatigue crack propagation rate of pressureless sintered Ag nanoparticles 无压烧结银纳米颗粒疲劳裂纹扩展速率的温度依赖性
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-06-13 DOI: 10.23919/LTB-3D.2017.7947482
Ryo Kimura, Y. Kariya, N. Mizumura, K. Sasaki
{"title":"Temperature dependence of fatigue crack propagation rate of pressureless sintered Ag nanoparticles","authors":"Ryo Kimura, Y. Kariya, N. Mizumura, K. Sasaki","doi":"10.23919/LTB-3D.2017.7947482","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947482","url":null,"abstract":"The effects of temperatures on the rate of pressure-less sintered fatigue crack propagation were investigated in this study. For each test temperature, the Dowling-Begley's fatigue crack propagation law held true. Temperature effects on the behavior of fatigue crack propagation appeared mainly in the power exponent of the Dowling-Begley law.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129680806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A study on low temperature SAM modified POM direct bonding affected by VUV/O3 irradiation VUV/O3辐照对低温SAM改性POM直接键合的影响研究
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-06-13 DOI: 10.23919/LTB-3D.2017.7947465
Weixin Fu, Bo Ma, H. Kuwae, S. Shoji, J. Mizuno
{"title":"A study on low temperature SAM modified POM direct bonding affected by VUV/O3 irradiation","authors":"Weixin Fu, Bo Ma, H. Kuwae, S. Shoji, J. Mizuno","doi":"10.23919/LTB-3D.2017.7947465","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947465","url":null,"abstract":"A direct bonding of polyoxymethelene (POM) was feasible at 100 °C by using self-assembled monolayers (SAM) as surface modification method. (3-Aminopropyl)triethoxysilane (APTES) and (3-Glycidyloxypropyl)trimethoxysilane (GOPTS) were applied in our work. Surface modification carried out with different VUV/O3 irradiation conditions showed different bonding strength. In addition, the bonding condition with highest strength had an average strength of 0.37 MPa. This technology was expected to be used in packaging for micro/nano electromechanical systems (MEMS/NMES), such as bio-/medical devices.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126890605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si 硅上LNOI对LiNbO3和SiO2/Si表面活化键合的影响
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-06-13 DOI: 10.23919/LTB-3D.2017.7947443
R. Takigawa, E. Higurashi, T. Asano
{"title":"Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si","authors":"R. Takigawa, E. Higurashi, T. Asano","doi":"10.23919/LTB-3D.2017.7947443","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947443","url":null,"abstract":"Wafer-level bonding of LiNbO<inf>3</inf> (LN) and Si with thermally grown SiO<inf>2</inf> layer is demonstrated using surface-activated bonding method for the realization of LiNbO<inf>3</inf>-on-Insulator (LNOI) on Si.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125389866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Sn-Bi added Ag-based transient liquid phase sintering for low temperature bonding Sn-Bi加入银基瞬态液相烧结进行低温键合
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-06-13 DOI: 10.23919/LTB-3D.2017.7947430
M. K. Faiz, Takehiro Yamamoto, M. Yoshida
{"title":"Sn-Bi added Ag-based transient liquid phase sintering for low temperature bonding","authors":"M. K. Faiz, Takehiro Yamamoto, M. Yoshida","doi":"10.23919/LTB-3D.2017.7947430","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947430","url":null,"abstract":"A low temperature and low pressure fluxless bonding of plateless Cu-Cu substrates has been achieved by transient liquid phase sintering of Ag and Sn-Bi eutectic powder mixture in a formic acid reducing environment. The effects of Sn-Bi addition amount and sintering temperature to the shear strength and microstructure were investigated. Remelting temperature of the sintered paste was also examined. Shear strength of 30 weight percentage added Sn-Bi that was sintered at 250°C was over than 20 MPa. The microstructure varied with the Sn-Bi addition amount, however, mainly consisted of Ag solid solution and/or Ag-Sn intermetallic compounds (IMCs), Bi-rich phase and Cu-Sn IMCs. No remelting event at Sn-Bi eutectic temperature was observed and the remelting temperature shifted to approximately 262°C, implying the possibility for higher operation temperature although the processing was performed at lower temperature.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128727941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Ar+H2 atmospheric-pressure plasma treatment for Au-Au bonding and influence of air exposure on surface contamination Ar+H2常压等离子体处理Au-Au键合及空气暴露对表面污染的影响
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-06-13 DOI: 10.23919/LTB-3D.2017.7947460
Michitaka Yamamoto, E. Higurashi, T. Suga, R. Sawada, T. Itoh
{"title":"Ar+H2 atmospheric-pressure plasma treatment for Au-Au bonding and influence of air exposure on surface contamination","authors":"Michitaka Yamamoto, E. Higurashi, T. Suga, R. Sawada, T. Itoh","doi":"10.23919/LTB-3D.2017.7947460","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947460","url":null,"abstract":"Au-Au room-temperature bonding in ambient air was demonstrated by applying argon and hydrogen gas mixture (Ar+H2) atmospheric-pressure (AP) plasma treatment to surface activated bonding. Although conventional Ar low-pressure plasma treatment improved bonding strength only within air exposure for 1 hour, Ar+H2 AP plasma treatment improved the bonding strength even after air exposure for 10 hours.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127696997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Cu-Cu direct bonding by introducing Au intermediate layer 引入Au中间层的Cu-Cu直接键合
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-06-13 DOI: 10.23919/LTB-3D.2017.7947466
H. Noma, T. Kamibayashi, H. Kuwae, N. Suzuki, T. Nonaka, S. Shoji, J. Mizuno
{"title":"Cu-Cu direct bonding by introducing Au intermediate layer","authors":"H. Noma, T. Kamibayashi, H. Kuwae, N. Suzuki, T. Nonaka, S. Shoji, J. Mizuno","doi":"10.23919/LTB-3D.2017.7947466","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947466","url":null,"abstract":"Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133175473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication processes of magneto-optic waveguides with Si guiding layer for optical nonreciprocal devices 光学非互易器件用硅导层磁光波导的制备工艺
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-06-13 DOI: 10.23919/LTB-3D.2017.7947478
Salinee Choowitsakunlert, K. Takagiwa, Takuya Kobashigawa, Nariaki Hosoya, R. Silapunt, H. Yokoi
{"title":"Fabrication processes of magneto-optic waveguides with Si guiding layer for optical nonreciprocal devices","authors":"Salinee Choowitsakunlert, K. Takagiwa, Takuya Kobashigawa, Nariaki Hosoya, R. Silapunt, H. Yokoi","doi":"10.23919/LTB-3D.2017.7947478","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947478","url":null,"abstract":"An optical isolator employing a nonreciprocal guided-radiation mode conversion has been investigated. This device consists of a rib-type magneto-optic waveguide with a Si guiding layer. Relationship of waveguide parameters for isolator operation was clarified for various gaps. Fabrication processes of the magneto-optic waveguides are discussed by comparing waveguide parameters for isolator operation.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"3 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132365312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication and evaluation of molding and bonding tools for Au micromirror formation 金微镜成型成型和粘接工具的制造与评价
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-06-13 DOI: 10.23919/LTB-3D.2017.7947480
R. Nishimura, Seiya Matsuoka, E. Higurashi, T. Suga, R. Sawada
{"title":"Fabrication and evaluation of molding and bonding tools for Au micromirror formation","authors":"R. Nishimura, Seiya Matsuoka, E. Higurashi, T. Suga, R. Sawada","doi":"10.23919/LTB-3D.2017.7947480","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947480","url":null,"abstract":"In order to fabricate Au micromirrors using a method of simultaneous molding and low-temperature Au-Au bonding, a fabrication method of molding and bonding tools using diamond blade dicing is investigated. Diamond blade dicing of synthetic quartz glass substrates produced smooth sidewall surfaces with root-mean-square roughness of 8 nm in the sample translation direction and that of 56 nm in the perpendicular to the translation direction. Using these fabricated tools, Au micromirrors were successfully formed at 150 °C.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134110512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Plane-view transmission electron microscopy of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature 室温下表面活化键合制备的Si/GaAs界面的平面透射电镜研究
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-16 DOI: 10.23919/LTB-3D.2017.7947400
Y. Ohno, H. Yoshida, S. Takeda, L. Jianbo, N. Shigekawa
{"title":"Plane-view transmission electron microscopy of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature","authors":"Y. Ohno, H. Yoshida, S. Takeda, L. Jianbo, N. Shigekawa","doi":"10.23919/LTB-3D.2017.7947400","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947400","url":null,"abstract":"Si/GaAs interfaces fabricated by surface-activated bonding at room temperature were examined by plane-view transmission electron microscopy. It was hypothesized that the interface resistance would be originated from surface defects on the Si and GaAs substrates introduced during the bonding process.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134222857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Room temperature bonding and debonding of PI film and glass substrate based on SAB method 基于SAB法的PI膜与玻璃基板的室温粘接与脱粘
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-16 DOI: 10.23919/LTB-3D.2017.7947434
K. Takeuchi, M. Fujino, Y. Matsumoto, T. Suga
{"title":"Room temperature bonding and debonding of PI film and glass substrate based on SAB method","authors":"K. Takeuchi, M. Fujino, Y. Matsumoto, T. Suga","doi":"10.23919/LTB-3D.2017.7947434","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947434","url":null,"abstract":"In the previews study, we have proposed the room temperature bonding method for polyimide (PI) films and glass wafers that enables debonding even after high temperature process at 400 °C. However, the mechanism that the bond strength was affected by heating was not clear. In this work, we investigated the relationship between the heat treatment and the bond strength of PI films and glass wafers. From the XPS analysis, it was cleared that the fracture path of the PI film shifted to the interface between the PI and the Si intermediate layer from the inner PI film. We indicated the debonding process of the PI and the glass substrates bonded with Si and Fe layers.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114349439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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