室温下表面活化键合制备的Si/GaAs界面的平面透射电镜研究

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-16 DOI:10.23919/LTB-3D.2017.7947400

Y. Ohno, H. Yoshida, S. Takeda, L. Jianbo, N. Shigekawa

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引用次数: 3

摘要

采用平面透射电镜对室温下表面活化键合制备的Si/GaAs界面进行了研究。假设界面电阻是由Si和GaAs衬底在键合过程中引入的表面缺陷引起的。

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Plane-view transmission electron microscopy of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature

Si/GaAs interfaces fabricated by surface-activated bonding at room temperature were examined by plane-view transmission electron microscopy. It was hypothesized that the interface resistance would be originated from surface defects on the Si and GaAs substrates introduced during the bonding process.

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来源期刊

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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