引入Au中间层的Cu-Cu直接键合

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-06-13 DOI:10.23919/LTB-3D.2017.7947466

H. Noma, T. Kamibayashi, H. Kuwae, N. Suzuki, T. Nonaka, S. Shoji, J. Mizuno

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引用次数: 0

摘要

研究了在直接浸金(DIG)的帮助下，Cu-Cu直接键合在多模扇形圆片级封装中的应用。Cu-Cu直接键合是高频应用的关键技术。为了解决传统方法的挑战，采用了DIG。结果表明，在剪切试验中出现了粘聚破坏。

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Cu-Cu direct bonding by introducing Au intermediate layer

Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.

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来源期刊

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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