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2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)最新文献

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Low temperature Cu-Cu direct bonding by (111) oriented nano-twin Cu (111)取向纳米双Cu的低温Cu-Cu直接键合
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-16 DOI: 10.23919/LTB-3D.2017.7947428
J. Juang, Yi-Cheng Chu, Chia-ling Lu, Chih Chen, K. Tu
{"title":"Low temperature Cu-Cu direct bonding by (111) oriented nano-twin Cu","authors":"J. Juang, Yi-Cheng Chu, Chia-ling Lu, Chih Chen, K. Tu","doi":"10.23919/LTB-3D.2017.7947428","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947428","url":null,"abstract":"In this study, a low temperature solid state diffusion bonding process with (111) highly oriented nano-twined Cu (nt-Cu) was proposed. A less void bonding interface was observed reveals a good bonding quality for the bonded samples. In addition, a large quasi-single grain was identified in the bondedfilm. Based on these results, it is believed that high strength and durable bonding structure can be accomplished by bonding two highly (111)-oriented nt-Cu films.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"166 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122149817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on low-cycle fatigue testing and therrmal fatigue life prediction of electroplated copper thin film for through hole via 通孔通孔电镀铜薄膜低周疲劳试验及热疲劳寿命预测研究
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-16 DOI: 10.23919/LTB-3D.2017.7947481
Kazuki Watanabe, Naoyuki Yajima, Y. Kariya, Yoshiyuki Hiroshima, Shunichi Kikuchi, Akiko Matsui, Hiroshi Shimizu
{"title":"Study on low-cycle fatigue testing and therrmal fatigue life prediction of electroplated copper thin film for through hole via","authors":"Kazuki Watanabe, Naoyuki Yajima, Y. Kariya, Yoshiyuki Hiroshima, Shunichi Kikuchi, Akiko Matsui, Hiroshi Shimizu","doi":"10.23919/LTB-3D.2017.7947481","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947481","url":null,"abstract":"A new fatigue test method was proposed for low-cycle fatigue lives of electroplated copper for the through hole via (THV) in a printed wiring board. And the fatigue life of THV predicted from the Manson-Coffin's law of thermal fatigue test was good agreement with the thermal fatigue life obtained from the experimental result of thermal fatigue test of THV.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134446939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Introduction to the innovative interface bonding technology 介绍创新的界面粘接技术
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-16 DOI: 10.23919/LTB-3D.2017.7947397
T. Suga
{"title":"Introduction to the innovative interface bonding technology","authors":"T. Suga","doi":"10.23919/LTB-3D.2017.7947397","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947397","url":null,"abstract":"A short history and the future perspective of the surface activated bonding (SAB) as an innovative bonding technology will be summarized with a future outlook.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"245 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122529862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Wafer-to-wafer bonding for hermetic and vacuum packaging of smart sensors 用于智能传感器的密封和真空封装的晶圆间键合
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-16 DOI: 10.23919/LTB-3D.2017.7947406
D. Temple, A. Hilton
{"title":"Wafer-to-wafer bonding for hermetic and vacuum packaging of smart sensors","authors":"D. Temple, A. Hilton","doi":"10.23919/LTB-3D.2017.7947406","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947406","url":null,"abstract":"In this presentation, we will review recent advances in the development of low temperature wafer-to-wafer bonding for the fabrication of hermetic and/or vacuum enclosures for sensors that are monolithically integrated with supporting electronic circuitry. The presence of CMOS circuitry with its limited thermal budget and the requirement of low pressures inside the microchamber impose strict requirements on the bonding process. We will describe metal-based approaches that leverage mature deposition and patterning techniques developed for integrated circuits (ICs) and micro-electro-mechanical systems (MEMS). The ability to produce finely patterned metal seals significantly reduces the real estate required for bonding and therefore lowers the size, weight, and cost of the device. In addition, massively parallel wafer-level processing drastically reduces the cost of the device. Metal-based approaches can be executed at low temperatures compatible with CMOS circuits and can be integrated with various substrate materials and topographies, making them ideal for smart sensors such as microbolometer FPAs.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126833022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impacts of bonding-layer resistance of Si bottom cells on interface resistance in InGaP/GaAs/Si hybrid triple-junction cells InGaP/GaAs/Si杂化三结电池中Si底电池键合层电阻对界面电阻的影响
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947448
N. Shigekawa, Jianbo Liang
{"title":"Impacts of bonding-layer resistance of Si bottom cells on interface resistance in InGaP/GaAs/Si hybrid triple-junction cells","authors":"N. Shigekawa, Jianbo Liang","doi":"10.23919/LTB-3D.2017.7947448","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947448","url":null,"abstract":"We fabricate InGaP/GaAs/Si hybrid triple-junction (3J) cells with different sheet resistances of bonding layers in Si bottom cells. We estimate resistances across the p-GaAs/n-Si bonding interfaces of the respective 3J cells by measuring the potentials of the bonding layers. We find that the interface resistances are higher in 3J cells with the bonding layers of Si bottom cells with higher sheet resistances.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"223 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114986655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Bonding temperature dependence of GalnAsP/InP wafer grown on directly bonded InP/Si substrate 直接键合InP/Si衬底生长GalnAsP/InP晶圆的键合温度依赖性
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947471
Masaki Aikawa, T. Nishiyama, Y. Kamada, Xu Han, G. Periyanayagam, Kazuki Uchida, Hirokazu Sugiyama, N. Hayasaka, K. Shimomura
{"title":"Bonding temperature dependence of GalnAsP/InP wafer grown on directly bonded InP/Si substrate","authors":"Masaki Aikawa, T. Nishiyama, Y. Kamada, Xu Han, G. Periyanayagam, Kazuki Uchida, Hirokazu Sugiyama, N. Hayasaka, K. Shimomura","doi":"10.23919/LTB-3D.2017.7947471","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947471","url":null,"abstract":"Bonding temperature dependence on the surface conditions and optical characteristics of MOVPE grown GalnAsP/InP laser structure using directly bonded InP/Si substrate were studied. We have changed the temperature for bonding InP and Si substrate between 350 and 450 °C. The void density and photoluminescence intensity were examined.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"239 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122817109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low-temperature direct bonding of silicon to quartz glass wafer via sequential wet chemical surface activation 通过连续的湿化学表面活化，硅与石英玻璃晶圆的低温直接键合
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947417
Chenxi Wang, Jikai Xu, X. Zeng, Yanhong Tian, Chunqing Wang, T. Suga
{"title":"Low-temperature direct bonding of silicon to quartz glass wafer via sequential wet chemical surface activation","authors":"Chenxi Wang, Jikai Xu, X. Zeng, Yanhong Tian, Chunqing Wang, T. Suga","doi":"10.23919/LTB-3D.2017.7947417","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947417","url":null,"abstract":"We demonstrate a bonding method for combining silicon and quartz glass wafers using a sequential wet chemical surface activation (i.e., SPM→RCAl cleaning). After a multistep post annealing at 200°C, strong bonding with no voids or microcracks was obtained. Based on the detailed surface and bonding interface characterizations, a bonding model was developed to gain insight the low-temperature bonding mechanism. This cost-effective bonding process has great potentials for silicon- and glass-based heterogeneous integrations without requiring vacuum system.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128249310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Double taper-type mode convertor for direct bonded III-V/SOI hybrid photonic devices 用于直接键合III-V/SOI混合光子器件的双锥型模式转换器
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947470
S. Inoue, Y. Hayashi, Jun-ichi Suzuki, K. Itoh, Kumi Nagasaka, N. Nishiyama, S. Arai
{"title":"Double taper-type mode convertor for direct bonded III-V/SOI hybrid photonic devices","authors":"S. Inoue, Y. Hayashi, Jun-ichi Suzuki, K. Itoh, Kumi Nagasaka, N. Nishiyama, S. Arai","doi":"10.23919/LTB-3D.2017.7947470","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947470","url":null,"abstract":"The double taper-type mode convertor for direct bonded GaInAsP/SOI hybrid photonic devices was proposed and the characteristics of the fabricated structure using plasma activated bonding were measured. The calculated and measured results showed the coupling efficiencies of 90% and 75%, respectively.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126817419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of plasma treatment for removing aliphatic contaminants by infrared spectroscopy on MgO(100) and quartz substrates 等离子体红外光谱法去除MgO(100)和石英基体上脂肪族污染物的影响
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947454
Y. Nagao
{"title":"Effect of plasma treatment for removing aliphatic contaminants by infrared spectroscopy on MgO(100) and quartz substrates","authors":"Y. Nagao","doi":"10.23919/LTB-3D.2017.7947454","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947454","url":null,"abstract":"To establish the non-contact and low cost evaluation of the surface contaminants, an infrared p-polarized multiple-angle incidence resolution spectrometry (p-MAIRS) technique was performed on four kinds of MgO and quartz substrates with different cleanness. The results show that plasma treatment is effective to remove aliphatic contaminants.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"201 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121285950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Direct bond optimisation via controlled in situ water vapour injection 直接结合优化通过控制在现场水蒸气注入
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947456
V. Masteika, T. Rogers, R. Santilli
{"title":"Direct bond optimisation via controlled in situ water vapour injection","authors":"V. Masteika, T. Rogers, R. Santilli","doi":"10.23919/LTB-3D.2017.7947456","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947456","url":null,"abstract":"Hydrophilic bonding is a routine process for micro structure manufacture. However it can be difficult to achieve repeatable high strength bonding whilst minimising interface voids. We present results that illustrate key relationships between activation and bonding parameters and demonstrate controllable bond strength and annealing void area.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132163518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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