直接键合InP/Si衬底生长GalnAsP/InP晶圆的键合温度依赖性

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI:10.23919/LTB-3D.2017.7947471

Masaki Aikawa, T. Nishiyama, Y. Kamada, Xu Han, G. Periyanayagam, Kazuki Uchida, Hirokazu Sugiyama, N. Hayasaka, K. Shimomura

{"title":"直接键合InP/Si衬底生长GalnAsP/InP晶圆的键合温度依赖性","authors":"Masaki Aikawa, T. Nishiyama, Y. Kamada, Xu Han, G. Periyanayagam, Kazuki Uchida, Hirokazu Sugiyama, N. Hayasaka, K. Shimomura","doi":"10.23919/LTB-3D.2017.7947471","DOIUrl":null,"url":null,"abstract":"Bonding temperature dependence on the surface conditions and optical characteristics of MOVPE grown GalnAsP/InP laser structure using directly bonded InP/Si substrate were studied. We have changed the temperature for bonding InP and Si substrate between 350 and 450 °C. The void density and photoluminescence intensity were examined.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"239 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Bonding temperature dependence of GalnAsP/InP wafer grown on directly bonded InP/Si substrate\",\"authors\":\"Masaki Aikawa, T. Nishiyama, Y. Kamada, Xu Han, G. Periyanayagam, Kazuki Uchida, Hirokazu Sugiyama, N. Hayasaka, K. Shimomura\",\"doi\":\"10.23919/LTB-3D.2017.7947471\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Bonding temperature dependence on the surface conditions and optical characteristics of MOVPE grown GalnAsP/InP laser structure using directly bonded InP/Si substrate were studied. We have changed the temperature for bonding InP and Si substrate between 350 and 450 °C. The void density and photoluminescence intensity were examined.\",\"PeriodicalId\":183993,\"journal\":{\"name\":\"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"volume\":\"239 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/LTB-3D.2017.7947471\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/LTB-3D.2017.7947471","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

研究了直接键合InP/Si衬底的MOVPE生长GalnAsP/InP激光结构的表面条件和光学特性对键合温度的依赖性。我们将InP和Si衬底的键合温度在350到450°C之间改变。检测了材料的空隙密度和光致发光强度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Bonding temperature dependence of GalnAsP/InP wafer grown on directly bonded InP/Si substrate

Bonding temperature dependence on the surface conditions and optical characteristics of MOVPE grown GalnAsP/InP laser structure using directly bonded InP/Si substrate were studied. We have changed the temperature for bonding InP and Si substrate between 350 and 450 °C. The void density and photoluminescence intensity were examined.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

自引率

0.00%

发文量