M. Ichikawa, N. Eboshi, T. Kemmochi, M. Sano, T. Mukai, M. Uomoto, T. Shimatsu
{"title":"利用原子扩散键合和后续激光照射增强铝薄膜晶圆的透光性","authors":"M. Ichikawa, N. Eboshi, T. Kemmochi, M. Sano, T. Mukai, M. Uomoto, T. Shimatsu","doi":"10.23919/LTB-3D.2017.7947402","DOIUrl":null,"url":null,"abstract":"Enhancement of light transmittance was examined for sapphire or synthetic quartz glass wafers bonded with thin Al films using atomic diffusion bonding (ADB). The results indicate that the thin Al film at the bonded interface diffuses into the wafer by subsequent laser irradiation, which enhances the light transmittance through the bonded interface.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"130 9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhancement of light transmittance for wafers bonded with thin Al films using atomic diffusion bonding and subsequent laser irradiation\",\"authors\":\"M. Ichikawa, N. Eboshi, T. Kemmochi, M. Sano, T. Mukai, M. Uomoto, T. Shimatsu\",\"doi\":\"10.23919/LTB-3D.2017.7947402\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Enhancement of light transmittance was examined for sapphire or synthetic quartz glass wafers bonded with thin Al films using atomic diffusion bonding (ADB). The results indicate that the thin Al film at the bonded interface diffuses into the wafer by subsequent laser irradiation, which enhances the light transmittance through the bonded interface.\",\"PeriodicalId\":183993,\"journal\":{\"name\":\"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"volume\":\"130 9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/LTB-3D.2017.7947402\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/LTB-3D.2017.7947402","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Enhancement of light transmittance for wafers bonded with thin Al films using atomic diffusion bonding and subsequent laser irradiation
Enhancement of light transmittance was examined for sapphire or synthetic quartz glass wafers bonded with thin Al films using atomic diffusion bonding (ADB). The results indicate that the thin Al film at the bonded interface diffuses into the wafer by subsequent laser irradiation, which enhances the light transmittance through the bonded interface.