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2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)最新文献

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Approaches for wafer level packaging and heterogeneous system integration for CMOS and MEMS sensors CMOS和MEMS传感器的晶圆级封装和异构系统集成方法
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947409
S. Dempwolf, L. Hofmann, Christopher Bowers, D. Guenther, R. Knechtel, S. Schulz, R. Gerbach
{"title":"Approaches for wafer level packaging and heterogeneous system integration for CMOS and MEMS sensors","authors":"S. Dempwolf, L. Hofmann, Christopher Bowers, D. Guenther, R. Knechtel, S. Schulz, R. Gerbach","doi":"10.23919/LTB-3D.2017.7947409","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947409","url":null,"abstract":"This paper describes approaches for 3D integration of CMOS and MEMS sensors. It implies methods for wafer level packaging, Through-Silicon-Vias (TSV) and novel methods for heterogeneous system integration like micro-transfer-printing. These technologies are described on sensor devices.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114440783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A low-temperature solid-state bonding method using Ag-modified Cu microcones and Ag buffer 银修饰铜微锥与银缓冲液的低温固相键合方法
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947432
Menglong Sun, Fengtian Hu, Longlong Ju, A. Hu, Ming Li, Huiqin Ling, T. Hang
{"title":"A low-temperature solid-state bonding method using Ag-modified Cu microcones and Ag buffer","authors":"Menglong Sun, Fengtian Hu, Longlong Ju, A. Hu, Ming Li, Huiqin Ling, T. Hang","doi":"10.23919/LTB-3D.2017.7947432","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947432","url":null,"abstract":"A novel low-temperature solid-state bonding method that Cu microcones coated with Ag and Ag buffer has been proposed. Thin Ag layer was used to prevent the oxidation of Cu microcones and Ag layer of several micrometers was used as a buffer layer between Cu microcones and Cu bumps. No brittle IMCs formed in the interfaces.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"426 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126986859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integration of 200 mm Si-CMOS and III-V materials through wafer bonding 通过晶圆键合集成200mm Si-CMOS和III-V材料
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947426
K. Lee, Shuyu Bao, K. Lee, E. Fitzgerald, C. S. Tan
{"title":"Integration of 200 mm Si-CMOS and III-V materials through wafer bonding","authors":"K. Lee, Shuyu Bao, K. Lee, E. Fitzgerald, C. S. Tan","doi":"10.23919/LTB-3D.2017.7947426","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947426","url":null,"abstract":"A method to integrate III-V compound semiconductors (GaN HEMT, InGaN LED, InGaAs HEMT or InGaP LED) with Si-CMOS on a common Si substrate is demonstrated. The Si-CMOS layer is temporarily held on a Si handle wafer. Another III-V/Si substrate is then bonded to the Si-CMOS containing handle wafer. Finally, the handle wafer is released to realize the Si-CMOS on III-V/Si substrate. Through this method, a new generation of system with more functionality, better energy efficiency, and smaller form factor can be realized.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127652133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Grating design for packaged wavelength selective infrared emitter using surface plasmon polariton 采用表面等离子激元的封装波长选择性红外发射器的光栅设计
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947479
S. Yahagi, H. Ishihara, M. Ishii, S. Kumagai, M. Sasaki
{"title":"Grating design for packaged wavelength selective infrared emitter using surface plasmon polariton","authors":"S. Yahagi, H. Ishihara, M. Ishii, S. Kumagai, M. Sasaki","doi":"10.23919/LTB-3D.2017.7947479","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947479","url":null,"abstract":"Plasmonic thermal emitter is promising for improving the efficiency of the gas sensor generating the infrared matched with the gas absorption band. The combination with the microheater in the vacuum packaged setup will further reduce the thermal loss. Here, considering CO2 gas sensing, the grating design robust against the dimension error is examined.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125570789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low temperature direct bonding comparison 低温直接键合比较
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947416
F. Fournel, V. Larrey, C. Morales, C. Bridoux, H. Moriceau, F. Rieutord
{"title":"Low temperature direct bonding comparison","authors":"F. Fournel, V. Larrey, C. Morales, C. Bridoux, H. Moriceau, F. Rieutord","doi":"10.23919/LTB-3D.2017.7947416","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947416","url":null,"abstract":"Low temperature direct bonding technologies are now widely used for many applications. Mechanisms of some of these technics will be presented. The different way to obtain low temperature direct bonding will then be compared with their respective advantages and drawbacks.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129301347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomic structure of Ti-doped alumina grain boundaries fabricated in air and reducing atmosphere 在空气和还原气氛中制备ti掺杂氧化铝晶界的原子结构
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947475
S. Ishihara, E. Tochigi, N. Shibata, Y. Ikuhara
{"title":"Atomic structure of Ti-doped alumina grain boundaries fabricated in air and reducing atmosphere","authors":"S. Ishihara, E. Tochigi, N. Shibata, Y. Ikuhara","doi":"10.23919/LTB-3D.2017.7947475","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947475","url":null,"abstract":"Two a-alumina bicrystals doped with titanium were fabricated in different atmospheres: air and Ar-H2 mixed gas. The grain boundaries (GBs) of the bicrystals were investigated by transmission electron microscopy (TEM) and scanning TEM (STEM). Their atomic structures are reported in detail.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129868864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Graphene-mediated wafer bonding to prepare monolayer-cored double heterostructures for high-performance nanooptoelectronics 石墨烯介导晶片键合制备高性能纳米光电子用单层芯双异质结构
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947474
T. Naito, K. Tanabe
{"title":"Graphene-mediated wafer bonding to prepare monolayer-cored double heterostructures for high-performance nanooptoelectronics","authors":"T. Naito, K. Tanabe","doi":"10.23919/LTB-3D.2017.7947474","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947474","url":null,"abstract":"We have fabricated for the first time a monolayer-cored double heterostructure, towards the realization of high-efficiency nanooptoelectronic devices. We prepared a Si/graphene/Si stack by means of graphene-mediated wafer bonding and verified the interfacial mechanical stability and interlayer electrical connection, demonstrating a new application of wafer bonding.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126815209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis of the influence of interface charges on the electrical characteristics of GaAs/GaN junctions 界面电荷对GaAs/GaN结电特性的影响分析
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947473
S. Yamajo, J. Liang, N. Shigekawa
{"title":"Analysis of the influence of interface charges on the electrical characteristics of GaAs/GaN junctions","authors":"S. Yamajo, J. Liang, N. Shigekawa","doi":"10.23919/LTB-3D.2017.7947473","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947473","url":null,"abstract":"Electrical properties of p<sup>+</sup>-GaAs/n-GaN and n<sup>+</sup>-GaAs/n-GaN, heterojunctions fabricated by using surface-activated bonding (SAB) are investigated. The measured C-V characteristics of p<sup>+</sup>-GaAs/n-GaN and n<sup>+</sup>-GaAs/n-GaN junctions are in quantitative agreement with modeled ones obtained for the interface states density and the conduction-band discontinuity of 1.5×10<sup>14</sup> cm<sup>−2</sup> eV<sup>−1</sup> and 0.63 eV, respectively.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114709650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ab-initio local-energy analysis of Fe/TiC interfaces Fe/TiC界面的Ab-initio局域能分析
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947398
M. Kohyama, Vikas Sharma, Shingo Tanaka, Y. Shiihara
{"title":"Ab-initio local-energy analysis of Fe/TiC interfaces","authors":"M. Kohyama, Vikas Sharma, Shingo Tanaka, Y. Shiihara","doi":"10.23919/LTB-3D.2017.7947398","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947398","url":null,"abstract":"Local-energy scheme based on energy density within the PAW-GGA method has been applied to Fe(001)/TiC(001) coherent interfaces. Via Bader integration of the energy density, local energies of atomic regions are decided without the gauge dependent problem. By comparing the surface and interface supercells, we can clarify the contribution of each surface atom to the interface adhesion. The interface with Fe atoms located on C atoms shows quite different features from those of the interface with Fe atoms located on Ti atoms.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132386189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hydrogen radical treatment for indium surface oxide removal and re-oxidation behaviour 氢自由基处理对铟表面氧化去除及再氧化行为的影响
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947461
K. Furuyama, K. Yamanaka, E. Higurashi, T. Suga
{"title":"Hydrogen radical treatment for indium surface oxide removal and re-oxidation behaviour","authors":"K. Furuyama, K. Yamanaka, E. Higurashi, T. Suga","doi":"10.23919/LTB-3D.2017.7947461","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947461","url":null,"abstract":"This study investigates the effect of hydrogen radical treatment on indium surface oxide removal, and the observation of re-oxidation post treatment. It was found that hydrogen radical treatment successfully removes indium surface oxide at temperatures as low as 170 °C, and prevents re-oxidation compared to active surfaces obtained by bombardment.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128085972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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