通过晶圆键合集成200mm Si-CMOS和III-V材料

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI:10.23919/LTB-3D.2017.7947426

K. Lee, Shuyu Bao, K. Lee, E. Fitzgerald, C. S. Tan

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引用次数: 3

摘要

介绍了在普通Si衬底上集成III-V化合物半导体(GaN HEMT、InGaN LED、InGaAs HEMT或InGaP LED)和Si- cmos的方法。硅- cmos层暂时固定在硅柄晶圆上。然后将另一个III-V/Si衬底粘合到含有Si- cmos的手柄晶圆上。最后，释放手柄晶片，在III-V/Si衬底上实现Si- cmos。通过这种方法，可以实现功能更强、能效更高、外形更小的新一代系统。

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Integration of 200 mm Si-CMOS and III-V materials through wafer bonding

A method to integrate III-V compound semiconductors (GaN HEMT, InGaN LED, InGaAs HEMT or InGaP LED) with Si-CMOS on a common Si substrate is demonstrated. The Si-CMOS layer is temporarily held on a Si handle wafer. Another III-V/Si substrate is then bonded to the Si-CMOS containing handle wafer. Finally, the handle wafer is released to realize the Si-CMOS on III-V/Si substrate. Through this method, a new generation of system with more functionality, better energy efficiency, and smaller form factor can be realized.

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2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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