Analysis of the influence of interface charges on the electrical characteristics of GaAs/GaN junctions

Abstract

Electrical properties of p⁺-GaAs/n-GaN and n⁺-GaAs/n-GaN, heterojunctions fabricated by using surface-activated bonding (SAB) are investigated. The measured C-V characteristics of p⁺-GaAs/n-GaN and n⁺-GaAs/n-GaN junctions are in quantitative agreement with modeled ones obtained for the interface states density and the conduction-band discontinuity of 1.5×10¹⁴ cm⁻² eV⁻¹ and 0.63 eV, respectively.