界面电荷对GaAs/GaN结电特性的影响分析

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI:10.23919/LTB-3D.2017.7947473

S. Yamajo, J. Liang, N. Shigekawa

{"title":"界面电荷对GaAs/GaN结电特性的影响分析","authors":"S. Yamajo, J. Liang, N. Shigekawa","doi":"10.23919/LTB-3D.2017.7947473","DOIUrl":null,"url":null,"abstract":"Electrical properties of p+-GaAs/n-GaN and n+-GaAs/n-GaN, heterojunctions fabricated by using surface-activated bonding (SAB) are investigated. The measured C-V characteristics of p+-GaAs/n-GaN and n+-GaAs/n-GaN junctions are in quantitative agreement with modeled ones obtained for the interface states density and the conduction-band discontinuity of 1.5×1014 cm−2 eV−1 and 0.63 eV, respectively.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Analysis of the influence of interface charges on the electrical characteristics of GaAs/GaN junctions\",\"authors\":\"S. Yamajo, J. Liang, N. Shigekawa\",\"doi\":\"10.23919/LTB-3D.2017.7947473\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electrical properties of p+-GaAs/n-GaN and n+-GaAs/n-GaN, heterojunctions fabricated by using surface-activated bonding (SAB) are investigated. The measured C-V characteristics of p+-GaAs/n-GaN and n+-GaAs/n-GaN junctions are in quantitative agreement with modeled ones obtained for the interface states density and the conduction-band discontinuity of 1.5×1014 cm−2 eV−1 and 0.63 eV, respectively.\",\"PeriodicalId\":183993,\"journal\":{\"name\":\"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/LTB-3D.2017.7947473\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/LTB-3D.2017.7947473","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

研究了表面活化键合制备的p+-GaAs/n- gan和n+-GaAs/n- gan异质结的电学性能。测得的p+-GaAs/n- gan和n+-GaAs/n- gan结的C-V特性与模拟得到的界面态密度和导带不连续度分别为1.5×1014 cm−2 eV−1和0.63 eV的C-V特性定量一致。

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Analysis of the influence of interface charges on the electrical characteristics of GaAs/GaN junctions

Electrical properties of p⁺-GaAs/n-GaN and n⁺-GaAs/n-GaN, heterojunctions fabricated by using surface-activated bonding (SAB) are investigated. The measured C-V characteristics of p⁺-GaAs/n-GaN and n⁺-GaAs/n-GaN junctions are in quantitative agreement with modeled ones obtained for the interface states density and the conduction-band discontinuity of 1.5×10¹⁴ cm⁻² eV⁻¹ and 0.63 eV, respectively.

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来源期刊

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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