宽带隙功率半导体的先进封装

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI:10.23919/LTB-3D.2017.7947427

G. Feix

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引用次数: 0

摘要

本文解释了在标准线键合功率模块中使用碳化硅(SiC)和氮化镓(GaN)等快速开关、宽带隙功率半导体的限制。此外，还提出了一种利用先进的包装方法来充分利用它们的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Advanced packaging for wide band gap power semiconductors

This paper explains the constraints for the use of very fast switching, wide band gap power semiconductors like silicon carbide (SiC) and gallium nitride (GaN) given in standard wire bonded power modules. Furthermore, a way to make full use of them by using an advanced packaging method is given here.

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来源期刊

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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