反射模式下红外微光弹性晶圆键合缺陷检测

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI:10.23919/LTB-3D.2017.7947415

A. Bosseboeuf, J. Rizzi, P. Coste, C. Bessouet

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引用次数: 2

摘要

结果表明，在波长为1.31 μm的反射模式下，利用微光弹性可以获得高质量的应力诱导双折射图，且具有较高的横向分辨率。将该技术应用于可变放大倍数的硅硅晶圆键合缺陷检测。结果表明，在2μm的横向分辨率下，可以观察到直径小至20μm的缺陷。

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Wafer bonding defects inspection by IR microphotoelasticity in reflection mode

It is demonstrated that high quality stress-induced birefringence maps in silicon with a high lateral resolution can be obtained by microphotoelasticity in reflection mode at wavelength of 1.31 μm. This technique was applied to inspection of Si-Si wafer bonding defects with variable magnifications. It is shown that defects with an apparent size as small as 20μm in diameter can be observed with a 2μm lateral resolution.

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来源期刊

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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