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Correlated photon emissions in electrically coupled semiconductor lasers 电耦合半导体激光器中的相关光子发射
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041144
F. Rana, P. Mayer, Rajeev J Ram
{"title":"Correlated photon emissions in electrically coupled semiconductor lasers","authors":"F. Rana, P. Mayer, Rajeev J Ram","doi":"10.1109/ISLC.2002.1041144","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041144","url":null,"abstract":"Photon emission in semiconductor lasers that are connected electrically in series or in parallel are shown both experimentally and theoretically to be highly correlated as a result of macroscopic Coulomb effects.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133663868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Direct measurement of facet temperature up to the melting point and COD in high power 980nm semiconductor diode lasers 高功率980nm半导体二极管激光器表面温度及熔点和COD的直接测量
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041166
Stephen J. Sweeney, Leslie Jamieson Lyons, Alfred R Adams, Daren Alfred Lock
{"title":"Direct measurement of facet temperature up to the melting point and COD in high power 980nm semiconductor diode lasers","authors":"Stephen J. Sweeney, Leslie Jamieson Lyons, Alfred R Adams, Daren Alfred Lock","doi":"10.1109/ISLC.2002.1041166","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041166","url":null,"abstract":"We measure the high-energy emission from high power lasers and extract the facet temperature. Severe heating is observed up to the onset of catastrophic optical damage (COD).","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"482 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115413074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Experimental and theoretical analysis of the recombination processes in GaInNs 1.3 /spl mu/m lasers 1.3 /spl mu/m GaInNs激光器复合过程的实验与理论分析
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041108
S. Tomić, R. Fehse, S. Choulis, E. O’Reilly, A. Adams, S. Sweeney, A. Andreev, T. Hosea, H. Riechert
{"title":"Experimental and theoretical analysis of the recombination processes in GaInNs 1.3 /spl mu/m lasers","authors":"S. Tomić, R. Fehse, S. Choulis, E. O’Reilly, A. Adams, S. Sweeney, A. Andreev, T. Hosea, H. Riechert","doi":"10.1109/ISLC.2002.1041108","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041108","url":null,"abstract":"By measuring the spontaneous emission from normally operating /spl sim/1.3 /spl mu/m GaInNAs/GaAs-based lasers we have quantitatively determined the variation of each of the current paths present in the devices as a function of temperature from 130 K to 370 K.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114654492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Room temperature continuous wave operation of quantum cascade lasers 量子级联激光器的室温连续波操作
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041141
D. Hofstetter, M. Beck, T. Aellen, M. Faist, U. Oesterle, M. Ilegems, E. Gini, H. Melchior
{"title":"Room temperature continuous wave operation of quantum cascade lasers","authors":"D. Hofstetter, M. Beck, T. Aellen, M. Faist, U. Oesterle, M. Ilegems, E. Gini, H. Melchior","doi":"10.1109/ISLC.2002.1041141","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041141","url":null,"abstract":"Fabrication of the laser structures relied on molecular beam epitaxy for the growth of the waveguide core (lower waveguide layer, active region and upper waveguide layer). Metalorganic vapor phase epitaxy was used for the growth of the InP top cladding layer and for the re-growth of the buried heterostructure. As shown schematically between the two waveguide layers comprised 35 repetitions of alternating un-doped 4 QW active regions.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131732405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Multiple-wavelength GaInAs/GaAs vertical cavity surface emitting laser array with wavelength span of over 100 nm 波长跨度超过100 nm的多波长GaInAs/GaAs垂直腔面发射激光器阵列
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041093
M. Arai, T. Kondo, A. Matsutani, T. Miyamoto, F. Koyama
{"title":"Multiple-wavelength GaInAs/GaAs vertical cavity surface emitting laser array with wavelength span of over 100 nm","authors":"M. Arai, T. Kondo, A. Matsutani, T. Miyamoto, F. Koyama","doi":"10.1109/ISLC.2002.1041093","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041093","url":null,"abstract":"we demonstrate a multiple wavelength GaInAs/GaAs VCSEL array emitting in a new wavelength window of 1.0-1.2 /spl mu/m, exhibiting a record wavelength span of over 100 nm. Also, we present a single-mode fiber data transmission experiment using the multiple wavelength VCSEL array with highly strained GaInAs/GaAs quantum wells.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132084402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical investigation of recombination processes in GaInNAs, InGaAsP and AlGalnAs quantum-well lasers using hydrostatic pressure 静水压力下GaInNAs、InGaAsP和AlGalnAs量子阱激光器复合过程的光学研究
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041129
S. R. Jin, S. Sweeney, G. Knowles, A. Adams, T. Higashi, H. Riechert, P. Thijs
{"title":"Optical investigation of recombination processes in GaInNAs, InGaAsP and AlGalnAs quantum-well lasers using hydrostatic pressure","authors":"S. R. Jin, S. Sweeney, G. Knowles, A. Adams, T. Higashi, H. Riechert, P. Thijs","doi":"10.1109/ISLC.2002.1041129","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041129","url":null,"abstract":"The lasing-energy dependence of carrier-recombination in InGaAsP, AlGaInAs and GaInNAs 1.3 /spl mu/m lasers is compared. For the first time we measure spontaneous emission at high pressure.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125024697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design and modeling of polarization-stable surface-etched VCSELs 偏振稳定表面蚀刻vcsel的设计与建模
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041096
H. Unold, P. Debernardi, R. Michalzik, F.K. Khan, K. Ebeling
{"title":"Design and modeling of polarization-stable surface-etched VCSELs","authors":"H. Unold, P. Debernardi, R. Michalzik, F.K. Khan, K. Ebeling","doi":"10.1109/ISLC.2002.1041096","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041096","url":null,"abstract":"We have successfully fabricated and modeled elliptically surface-etched oxide confined VCSELs for high single-mode polarization-stable operation. From our results, the two possible polarization directions seem to be determined by anisotropies in the oxidation process but can be selected by the orientation of the etched ellipse. Investigations with different mirror reflectivities and more finely varied ellipse shapes will lead to design rules for optimum performance.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115126046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Highly coherent optical frequency sweeper using injection locking in a tunable laser 在可调谐激光中使用注入锁定的高相干光学扫频器
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041111
M. Ishikawa, F. Kano, Y. Yoshikuni
{"title":"Highly coherent optical frequency sweeper using injection locking in a tunable laser","authors":"M. Ishikawa, F. Kano, Y. Yoshikuni","doi":"10.1109/ISLC.2002.1041111","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041111","url":null,"abstract":"The spectral linewidth of repeatedly injection-locked light was investigated. During 110 stages of injection locking and frequency shifting in the sweeper, no significant linewidth degradation was observed and coherency was maintained among frequency-shifted lights.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132941304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
First CW operation of 1.3 /spl mu/m-range GaInNAsSb VCSELs and VCSEL array 1.3 /spl mu/m范围GaInNAsSb VCSEL和VCSEL阵列的首次连续波运算
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-09-29 DOI: 10.1109/ISLC.2002.1041154
H. Shimizu, C. Setiagung, M. Ariga, K. Kumada, T. Hama, N. Ueda, N. Iwai, A. Kasukawa
{"title":"First CW operation of 1.3 /spl mu/m-range GaInNAsSb VCSELs and VCSEL array","authors":"H. Shimizu, C. Setiagung, M. Ariga, K. Kumada, T. Hama, N. Ueda, N. Iwai, A. Kasukawa","doi":"10.1109/ISLC.2002.1041154","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041154","url":null,"abstract":"First CW operation of 1.3 /spl mu/m-range VCSELs and VCSEL array using GaInNAsSb quantum wells on GaAs substrates are reported. The threshold voltage is as low as 1.2 V, which is the lowest value ever reported for 1.3 /spl mu/m-range GaInNAs-based VCSELs, and the threshold current. of 10ch-array are as uniform as 1.85 /spl plusmn/ 0.15 mA at 25/spl deg/C.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115148457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Polarization control of 1.3 /spl mu/m-wavelength vertical cavity surface emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding 方向不匹配晶圆键合制备1.3 /spl μ m波长垂直腔面发射激光器的偏振控制
IEEE 18th International Semiconductor Laser Conference Pub Date : 1900-01-01 DOI: 10.1109/ISLC.2002.1041097
Y. Okuno, J. Geske, Y. Chiu, S. Denbaars, J. Bowers
{"title":"Polarization control of 1.3 /spl mu/m-wavelength vertical cavity surface emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding","authors":"Y. Okuno, J. Geske, Y. Chiu, S. Denbaars, J. Bowers","doi":"10.1109/ISLC.2002.1041097","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041097","url":null,"abstract":"A technique to control the polarization of long-wavelength InGaAsP MQW VCSELs is presented. The active region, grown on [311] InP, is wafer-bonded to [100] GaAs-based mirrors.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123712519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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