波长跨度超过100 nm的多波长GaInAs/GaAs垂直腔面发射激光器阵列

IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI:10.1109/ISLC.2002.1041093

M. Arai, T. Kondo, A. Matsutani, T. Miyamoto, F. Koyama

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引用次数: 0

摘要

我们展示了一个多波长的GaInAs/GaAs VCSEL阵列，在1.0-1.2 /spl mu/m的新波长窗口中发射，显示出超过100 nm的记录波长跨度。此外，我们还提出了一种基于高应变GaInAs/GaAs量子阱的多波长VCSEL阵列单模光纤数据传输实验。

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Multiple-wavelength GaInAs/GaAs vertical cavity surface emitting laser array with wavelength span of over 100 nm

we demonstrate a multiple wavelength GaInAs/GaAs VCSEL array emitting in a new wavelength window of 1.0-1.2 /spl mu/m, exhibiting a record wavelength span of over 100 nm. Also, we present a single-mode fiber data transmission experiment using the multiple wavelength VCSEL array with highly strained GaInAs/GaAs quantum wells.

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IEEE 18th International Semiconductor Laser Conference

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