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IEEE 18th International Semiconductor Laser Conference最新文献

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InGaAs angled-grating distributed Bragg reflector lasers integrated with grating outcoupler for collimation InGaAs角光栅分布式Bragg反射器激光器，集成光栅外耦合器用于准直
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041102
M. Uemukai, Y. Kunoh, N. Shimada, T. Suhara
{"title":"InGaAs angled-grating distributed Bragg reflector lasers integrated with grating outcoupler for collimation","authors":"M. Uemukai, Y. Kunoh, N. Shimada, T. Suhara","doi":"10.1109/ISLC.2002.1041102","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041102","url":null,"abstract":"We propose and demonstrate an InGaAs-AlGaAs SQW angled grating distributed Bragg reflector (DBR) waveguide laser integrated with a grating outcoupler (GO) for collimation, which can be fabricated without regrowth and emits a collimated output beam.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115116026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High temperature continuous-wave operation of 1.3-1.55 /spl mu/m VCSELs with InP/air-gap DBRs 带InP/气隙dbr的1.3-1.55 /spl mu/m vcsel高温连续波运行
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041158
Chao-Kun Lin, D. Bour, Jintian Zhu, W. Perez, Michael H. Leary, A. Tandon, S. Corzine, M. Tan
{"title":"High temperature continuous-wave operation of 1.3-1.55 /spl mu/m VCSELs with InP/air-gap DBRs","authors":"Chao-Kun Lin, D. Bour, Jintian Zhu, W. Perez, Michael H. Leary, A. Tandon, S. Corzine, M. Tan","doi":"10.1109/ISLC.2002.1041158","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041158","url":null,"abstract":"High temperature CW operation of electrically pumped 1.3-1.55 /spl mu/m MQW VCSELs using top and bottom InP/air-gap DBRs with record low threshold current density is demonstrated.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124407043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
OMVPE grown 1.3 /spl mu/m GaInNAs quantum well lasers OMVPE生长出1.3 /spl μ m GaInNAs量子阱激光器
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041105
T. Katsuyama, T. Yamada, Y. Iguchi, S. Takagishi, M. Murata, J. Hashimoto, A. Ishida
{"title":"OMVPE grown 1.3 /spl mu/m GaInNAs quantum well lasers","authors":"T. Katsuyama, T. Yamada, Y. Iguchi, S. Takagishi, M. Murata, J. Hashimoto, A. Ishida","doi":"10.1109/ISLC.2002.1041105","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041105","url":null,"abstract":"OMVPE grown GaInNAs quantum well lasers with low threshold current (density) of 14.5mA (330A/cm/sup 2/) at 1.24 /spl mu/m, and high power operation (>60mW) at 1.30 /spl mu/m have been achieved.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122188600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dual-wavelength vertical-cavity surface-emitting laser arrays fabricated by nonplanar wafer bonding 非平面晶圆键合制备双波长垂直腔面发射激光阵列
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041156
J. Geske, Y. Okuno, J. Bowers
{"title":"Dual-wavelength vertical-cavity surface-emitting laser arrays fabricated by nonplanar wafer bonding","authors":"J. Geske, Y. Okuno, J. Bowers","doi":"10.1109/ISLC.2002.1041156","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041156","url":null,"abstract":"A dual-wavelength 1550 nm and 1530 nm VCSEL array is fabricated using two separate and distinct active regions integrated on a common mirror by nonplanar wafer bonding.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129821841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High performance long-wavelength QD diode lasers on GaAs substrates 基于砷化镓衬底的高性能长波量子点二极管激光器
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041162
N. Maleev, A. Kovsh, A. E. Zhukov, S. Mikhrin, A. P. Vasil’ev, Y. Shernyakov, D. Livshits, M. Maximov, V. Ustinov, Z. Alferov, N. Ledentsov, D. Bimberg
{"title":"High performance long-wavelength QD diode lasers on GaAs substrates","authors":"N. Maleev, A. Kovsh, A. E. Zhukov, S. Mikhrin, A. P. Vasil’ev, Y. Shernyakov, D. Livshits, M. Maximov, V. Ustinov, Z. Alferov, N. Ledentsov, D. Bimberg","doi":"10.1109/ISLC.2002.1041162","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041162","url":null,"abstract":"Long-wavelength GaAs-based quantum dot laser diodes with external differential efficiency of 84...88% combined with low internal loss and characteristic temperature of 150 K are realized.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127767975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
3W operation of 643 nm wavelength laser diode arrays with index guided structure 643 nm波长激光二极管阵列折射率导向结构的3W工作
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041152
D. Imanishi, Y. Hamaguchi, H. Yamanaka, T. Nagatake, T. Kitamura, Y. Moriya, Y. Ito, Y. Sato, S. Ito, S. Hirata
{"title":"3W operation of 643 nm wavelength laser diode arrays with index guided structure","authors":"D. Imanishi, Y. Hamaguchi, H. Yamanaka, T. Nagatake, T. Kitamura, Y. Moriya, Y. Ito, Y. Sato, S. Ito, S. Hirata","doi":"10.1109/ISLC.2002.1041152","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041152","url":null,"abstract":"A red high power laser array is developed with uniform near field pattern for a projection display system for the first time. The estimated lifetime is more than 3000 hours at the optical output power of 3 W.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128141176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Reliability proving of 980 nm pump lasers for metro applications 用于城域应用的980纳米泵浦激光器的可靠性验证
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041169
S. Arlt, Hans-Ulrich Pfeiffer, I. Jung, A. Jakubowicz, M. Schwarz, N. Matuschek, T. Pliška, B. Schmidt, S. Mohrdiek, C. Harder
{"title":"Reliability proving of 980 nm pump lasers for metro applications","authors":"S. Arlt, Hans-Ulrich Pfeiffer, I. Jung, A. Jakubowicz, M. Schwarz, N. Matuschek, T. Pliška, B. Schmidt, S. Mohrdiek, C. Harder","doi":"10.1109/ISLC.2002.1041169","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041169","url":null,"abstract":"Reliability testing of pump lasers is based on accelerated life tests with different stress conditions. These tests are well established and their underlying principle is the scaling of the device lifetime with different stress conditions. The stress conditions have to be chosen in such a way that the aging of the laser chip is accelerated but no additional aging effects compared to operating conditions are induced. If the scaling factor is known the device lifetime at operating conditions can be calculated.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130423730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High-power GaInAs/(Al)GaAs quantum dot lasers with optimized waveguide design for high brightness applications 高功率GaInAs/(Al)GaAs量子点激光器，具有优化的波导设计，适用于高亮度应用
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041159
S. Deubert, F. Klopf, J. Reithmaier, A. Forchel
{"title":"High-power GaInAs/(Al)GaAs quantum dot lasers with optimized waveguide design for high brightness applications","authors":"S. Deubert, F. Klopf, J. Reithmaier, A. Forchel","doi":"10.1109/ISLC.2002.1041159","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041159","url":null,"abstract":"Quantum dot lasers with high cw output power, very low temperature shift of emission wavelength and vertical far field angles below 35/spl deg/ could be realized.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"42 21","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131574729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of saturable absorption on the performance of a 40 GHz optical clock recovered from a monolithic semiconductor laser 饱和吸收对单片半导体激光器40ghz光时钟性能的影响
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041120
Hong Chun Bao, Y. Wen, H. Liu
{"title":"Effect of saturable absorption on the performance of a 40 GHz optical clock recovered from a monolithic semiconductor laser","authors":"Hong Chun Bao, Y. Wen, H. Liu","doi":"10.1109/ISLC.2002.1041120","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041120","url":null,"abstract":"The effect of a saturable absorber (SA) on the performance of 40 GHz optical clock signal recovered from a monolithic semiconductor laser is investigated, in terms of timing jitter, locking range, and extinction ratio. Experiments show that using a SA improves the extinction ratio but reduces the locking range and increases sensitivity to the data mark ratio.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133011327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pulse generation at 100 GHz using Fabry-Perot lasers 使用法布里-珀罗激光器产生100千兆赫脉冲
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041121
K. Sato
{"title":"Pulse generation at 100 GHz using Fabry-Perot lasers","authors":"K. Sato","doi":"10.1109/ISLC.2002.1041121","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041121","url":null,"abstract":"Summary form only given. Passive mode locking of InGaAsP strained MQW Fabry-Perot lasers for 100-GHz pulse generation is reported. Mode-locking instability appearing as frequency jumps was observed.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133456769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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