{"title":"高功率GaInAs/(Al)GaAs量子点激光器，具有优化的波导设计，适用于高亮度应用","authors":"S. Deubert, F. Klopf, J. Reithmaier, A. Forchel","doi":"10.1109/ISLC.2002.1041159","DOIUrl":null,"url":null,"abstract":"Quantum dot lasers with high cw output power, very low temperature shift of emission wavelength and vertical far field angles below 35/spl deg/ could be realized.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"42 21","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High-power GaInAs/(Al)GaAs quantum dot lasers with optimized waveguide design for high brightness applications\",\"authors\":\"S. Deubert, F. Klopf, J. Reithmaier, A. Forchel\",\"doi\":\"10.1109/ISLC.2002.1041159\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Quantum dot lasers with high cw output power, very low temperature shift of emission wavelength and vertical far field angles below 35/spl deg/ could be realized.\",\"PeriodicalId\":179103,\"journal\":{\"name\":\"IEEE 18th International Semiconductor Laser Conference\",\"volume\":\"42 21\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 18th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2002.1041159\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 18th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2002.1041159","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-power GaInAs/(Al)GaAs quantum dot lasers with optimized waveguide design for high brightness applications
Quantum dot lasers with high cw output power, very low temperature shift of emission wavelength and vertical far field angles below 35/spl deg/ could be realized.
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