带InP/气隙dbr的1.3-1.55 /spl mu/m vcsel高温连续波运行

IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI:10.1109/ISLC.2002.1041158

Chao-Kun Lin, D. Bour, Jintian Zhu, W. Perez, Michael H. Leary, A. Tandon, S. Corzine, M. Tan

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引用次数: 16

摘要

利用顶部和底部InP/气隙dbr，展示了具有创纪录低阈值电流密度的电泵浦1.3-1.55 /spl mu/m MQW vcsel的高温连续工作。

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High temperature continuous-wave operation of 1.3-1.55 /spl mu/m VCSELs with InP/air-gap DBRs

High temperature CW operation of electrically pumped 1.3-1.55 /spl mu/m MQW VCSELs using top and bottom InP/air-gap DBRs with record low threshold current density is demonstrated.

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IEEE 18th International Semiconductor Laser Conference

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