High performance long-wavelength QD diode lasers on GaAs substrates

IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI:10.1109/ISLC.2002.1041162

N. Maleev, A. Kovsh, A. E. Zhukov, S. Mikhrin, A. P. Vasil’ev, Y. Shernyakov, D. Livshits, M. Maximov, V. Ustinov, Z. Alferov, N. Ledentsov, D. Bimberg

引用次数: 1

Abstract

Long-wavelength GaAs-based quantum dot laser diodes with external differential efficiency of 84...88% combined with low internal loss and characteristic temperature of 150 K are realized.

查看原文本刊更多论文

基于砷化镓衬底的高性能长波量子点二极管激光器

外差效率为84的长波长gaas量子点激光二极管。88%，低内损耗，特性温度150k。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE 18th International Semiconductor Laser Conference

自引率

0.00%

发文量