基于砷化镓衬底的高性能长波量子点二极管激光器

IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI:10.1109/ISLC.2002.1041162

N. Maleev, A. Kovsh, A. E. Zhukov, S. Mikhrin, A. P. Vasil’ev, Y. Shernyakov, D. Livshits, M. Maximov, V. Ustinov, Z. Alferov, N. Ledentsov, D. Bimberg

{"title":"基于砷化镓衬底的高性能长波量子点二极管激光器","authors":"N. Maleev, A. Kovsh, A. E. Zhukov, S. Mikhrin, A. P. Vasil’ev, Y. Shernyakov, D. Livshits, M. Maximov, V. Ustinov, Z. Alferov, N. Ledentsov, D. Bimberg","doi":"10.1109/ISLC.2002.1041162","DOIUrl":null,"url":null,"abstract":"Long-wavelength GaAs-based quantum dot laser diodes with external differential efficiency of 84...88% combined with low internal loss and characteristic temperature of 150 K are realized.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High performance long-wavelength QD diode lasers on GaAs substrates\",\"authors\":\"N. Maleev, A. Kovsh, A. E. Zhukov, S. Mikhrin, A. P. Vasil’ev, Y. Shernyakov, D. Livshits, M. Maximov, V. Ustinov, Z. Alferov, N. Ledentsov, D. Bimberg\",\"doi\":\"10.1109/ISLC.2002.1041162\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Long-wavelength GaAs-based quantum dot laser diodes with external differential efficiency of 84...88% combined with low internal loss and characteristic temperature of 150 K are realized.\",\"PeriodicalId\":179103,\"journal\":{\"name\":\"IEEE 18th International Semiconductor Laser Conference\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 18th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2002.1041162\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 18th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2002.1041162","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

外差效率为84的长波长gaas量子点激光二极管。88%，低内损耗，特性温度150k。

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High performance long-wavelength QD diode lasers on GaAs substrates

Long-wavelength GaAs-based quantum dot laser diodes with external differential efficiency of 84...88% combined with low internal loss and characteristic temperature of 150 K are realized.

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IEEE 18th International Semiconductor Laser Conference

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