OMVPE grown 1.3 /spl mu/m GaInNAs quantum well lasers

IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI:10.1109/ISLC.2002.1041105

T. Katsuyama, T. Yamada, Y. Iguchi, S. Takagishi, M. Murata, J. Hashimoto, A. Ishida

引用次数: 0

Abstract

OMVPE grown GaInNAs quantum well lasers with low threshold current (density) of 14.5mA (330A/cm/sup 2/) at 1.24 /spl mu/m, and high power operation (>60mW) at 1.30 /spl mu/m have been achieved.

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OMVPE生长出1.3 /spl μ m GaInNAs量子阱激光器

已经实现了低阈值电流(密度)为14.5mA (330A/cm/sup /)、1.30 /spl mu/m的高功率工作(bbb60 mw)的OMVPE生长GaInNAs量子阱激光器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE 18th International Semiconductor Laser Conference

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