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IEEE 18th International Semiconductor Laser Conference最新文献

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InP-based vertical-cavity surface-emitting lasers with high output power and large modulation bandwidth 基于inp的高输出功率和大调制带宽的垂直腔面发射激光器
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041157
R. Shau, G. Bohm, F. Kohler, M. Amann
{"title":"InP-based vertical-cavity surface-emitting lasers with high output power and large modulation bandwidth","authors":"R. Shau, G. Bohm, F. Kohler, M. Amann","doi":"10.1109/ISLC.2002.1041157","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041157","url":null,"abstract":"This paper presents VCSELs in the InGaAlAs-InP system that have been realized from 1.31 /spl mu/m to 1.8 /spl mu/m enabling the buried tunnel junction technology with particular emphasis on output power, operation temperature and modulation speed at 1.55 /spl mu/m, aiming for 10 Gbit/s transmission.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"66 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133180766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Reliable uncooled 10-Gbit/s operation of GaInNAs-SQW laser GaInNAs-SQW激光器可靠的10gbit /s非冷却操作
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041119
A. Aoki, M. Kondow, T. Kitatani, S. Nakatsuka, M. Kudo, S. Tsuji
{"title":"Reliable uncooled 10-Gbit/s operation of GaInNAs-SQW laser","authors":"A. Aoki, M. Kondow, T. Kitatani, S. Nakatsuka, M. Kudo, S. Tsuji","doi":"10.1109/ISLC.2002.1041119","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041119","url":null,"abstract":"A 1.27-/spl mu/m GaInNAs-SQW edge-emitting laser diode (LD) demonstrated 80/spl deg/C 10-Gbit/s direct-modulation. Stable aging at 85/spl deg/C shows the potential of this material LDs for cost-effective long-wavelength light sources.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124228484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A novel model of semiconductor laser operation under strong optical feedback 强光反馈下半导体激光器工作的新模型
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041138
S. Abdulrhmann, M. Ahmed, T. Okamoto, M. Yamada
{"title":"A novel model of semiconductor laser operation under strong optical feedback","authors":"S. Abdulrhmann, M. Ahmed, T. Okamoto, M. Yamada","doi":"10.1109/ISLC.2002.1041138","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041138","url":null,"abstract":"Possibilities of pulsing and chaotic operations of semiconductor lasers under strong optical feedback were theoretically predicted by a new and unified model and experimentally confirmed.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"195 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117095450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Design of a widely tunable modulated grating Y-branch laser using the additive Vernier effect for improved super-mode selection 利用加性游标效应设计宽可调谐调制光栅y支激光器，以改善超模选择
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041137
J. Wesstrom, S. Hammerfeldt, J. Buus, R. Siljan, R. Laroy, H. de Vries
{"title":"Design of a widely tunable modulated grating Y-branch laser using the additive Vernier effect for improved super-mode selection","authors":"J. Wesstrom, S. Hammerfeldt, J. Buus, R. Siljan, R. Laroy, H. de Vries","doi":"10.1109/ISLC.2002.1041137","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041137","url":null,"abstract":"We present the design of a modulated grating Y-branch semiconductor laser containing a splitter and two multi-peak reflectors. High selectivity is achieved using the additive Vernier effect.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130143319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 50
Optimisation of 635 nm tensile strained GaInP laser diodes 635 nm拉伸应变GaInP激光二极管的优化设计
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041150
P. Smowton, G. Lewis, W. Chow, G. Jones, S. Bland
{"title":"Optimisation of 635 nm tensile strained GaInP laser diodes","authors":"P. Smowton, G. Lewis, W. Chow, G. Jones, S. Bland","doi":"10.1109/ISLC.2002.1041150","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041150","url":null,"abstract":"Summary form only given. We have measured the affect of strain on each of the recombination mechanisms that make up the total threshold current within 635nm laser diodes with a range of strain-well width combinations. Nonradiative recombination within the quantum well is a significant proportion of the total threshold current and determines the optimum strain-well width combination.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126859711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Sensitivity and scattering in an integrated heterodyned laser biochemical sensor 集成外差激光生化传感器的灵敏度和散射
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041103
D. A. Cohen, E. Skogen, J. Nolde, L. Coldren
{"title":"Sensitivity and scattering in an integrated heterodyned laser biochemical sensor","authors":"D. A. Cohen, E. Skogen, J. Nolde, L. Coldren","doi":"10.1109/ISLC.2002.1041103","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041103","url":null,"abstract":"We demonstrate a novel biochemical sensor based on monolithically integrated heterodyned sampled-grating DBR lasers. An untraditional waveguide design will allow detection of single 100 nm diameter macromolecules.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121545502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 4 km transmission at 10-Gb/s operation with wide temperature range in 1.3-/spl mu/m InGaAlAs MQW FP lasers 在1.3-/spl mu/m InGaAlAs MQW FP激光器中，以10 gb /s的宽温度范围工作，传输4公里
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041117
K. Nakahara, E. Nomoto, T. Tsuchiya, Y. Katou, R. Kaneko, A. Taike
{"title":"A 4 km transmission at 10-Gb/s operation with wide temperature range in 1.3-/spl mu/m InGaAlAs MQW FP lasers","authors":"K. Nakahara, E. Nomoto, T. Tsuchiya, Y. Katou, R. Kaneko, A. Taike","doi":"10.1109/ISLC.2002.1041117","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041117","url":null,"abstract":"We experimentally and theoretically demonstrated that transmission was over 4 km by using InGaAlAs Fabry Perot MQW lasers over a wide temperature range. We also present a new approach for estimating coefficient k of mode partition noise which we confirmed by transmission over 2 km in dark fibers with zero dispersion over the 1.29 to 1.33-/spl mu/m wavelength range.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116060449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Realization of all-optical flip-flop using bistable laser diode with nonlinear directional coupler 采用非线性定向耦合器的双稳激光二极管实现全光触发器
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041147
M. Takenaka, Y. Nakano
{"title":"Realization of all-optical flip-flop using bistable laser diode with nonlinear directional coupler","authors":"M. Takenaka, Y. Nakano","doi":"10.1109/ISLC.2002.1041147","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041147","url":null,"abstract":"A novel all-optical flip-flop device has been realized based upon a directionally-coupled bistable laser diode. Latchable optical set/reset switching by external control light injection (0 dBm or less) has been demonstrated.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131572623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Monolithic integration of continuous-relief diffractive structures with vertical-cavity surface-emitting lasers 连续浮雕衍射结构与垂直腔面发射激光器的整体集成
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041123
M. Karlsson, F. Nikolajeff, H. Martinsson, A. Larsson
{"title":"Monolithic integration of continuous-relief diffractive structures with vertical-cavity surface-emitting lasers","authors":"M. Karlsson, F. Nikolajeff, H. Martinsson, A. Larsson","doi":"10.1109/ISLC.2002.1041123","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041123","url":null,"abstract":"In this work, we have studied the transfer of diffractive optical elements, originally made in resist, into GaAs for monolithic integration with vertical-cavity surface-emitting laser.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132594540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
15GHz small-signal modulation performance of an integrated 1.3/spl mu/m DFB laser electro-absorption modulator with an identical MQW-double stack active layer 具有相同mqw双堆叠有源层的集成1.3/spl mu/m DFB激光电吸收调制器的15GHz小信号调制性能
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041118
B. Stegmueller, C. Hanke
{"title":"15GHz small-signal modulation performance of an integrated 1.3/spl mu/m DFB laser electro-absorption modulator with an identical MQW-double stack active layer","authors":"B. Stegmueller, C. Hanke","doi":"10.1109/ISLC.2002.1041118","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041118","url":null,"abstract":"A 15GHz small signal modulation bandwidth has been measured for the first time for a monolithically integrated 1.31/spl mu/m electro-absorption modulator DFB laser diode using an identical active multiple quantum well (MQW)-layer structure composed of two different QW types.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114488087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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