A. Aoki, M. Kondow, T. Kitatani, S. Nakatsuka, M. Kudo, S. Tsuji
{"title":"GaInNAs-SQW激光器可靠的10gbit /s非冷却操作","authors":"A. Aoki, M. Kondow, T. Kitatani, S. Nakatsuka, M. Kudo, S. Tsuji","doi":"10.1109/ISLC.2002.1041119","DOIUrl":null,"url":null,"abstract":"A 1.27-/spl mu/m GaInNAs-SQW edge-emitting laser diode (LD) demonstrated 80/spl deg/C 10-Gbit/s direct-modulation. Stable aging at 85/spl deg/C shows the potential of this material LDs for cost-effective long-wavelength light sources.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"116 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Reliable uncooled 10-Gbit/s operation of GaInNAs-SQW laser\",\"authors\":\"A. Aoki, M. Kondow, T. Kitatani, S. Nakatsuka, M. Kudo, S. Tsuji\",\"doi\":\"10.1109/ISLC.2002.1041119\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1.27-/spl mu/m GaInNAs-SQW edge-emitting laser diode (LD) demonstrated 80/spl deg/C 10-Gbit/s direct-modulation. Stable aging at 85/spl deg/C shows the potential of this material LDs for cost-effective long-wavelength light sources.\",\"PeriodicalId\":179103,\"journal\":{\"name\":\"IEEE 18th International Semiconductor Laser Conference\",\"volume\":\"116 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 18th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2002.1041119\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 18th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2002.1041119","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reliable uncooled 10-Gbit/s operation of GaInNAs-SQW laser
A 1.27-/spl mu/m GaInNAs-SQW edge-emitting laser diode (LD) demonstrated 80/spl deg/C 10-Gbit/s direct-modulation. Stable aging at 85/spl deg/C shows the potential of this material LDs for cost-effective long-wavelength light sources.
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