15GHz small-signal modulation performance of an integrated 1.3/spl mu/m DFB laser electro-absorption modulator with an identical MQW-double stack active layer

IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI:10.1109/ISLC.2002.1041118

B. Stegmueller, C. Hanke

引用次数: 1

Abstract

A 15GHz small signal modulation bandwidth has been measured for the first time for a monolithically integrated 1.31/spl mu/m electro-absorption modulator DFB laser diode using an identical active multiple quantum well (MQW)-layer structure composed of two different QW types.

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具有相同mqw双堆叠有源层的集成1.3/spl mu/m DFB激光电吸收调制器的15GHz小信号调制性能

采用由两种不同量子阱类型组成的相同有源多量子阱(MQW)层结构，首次测量了单片集成1.31/spl mu/m电吸收调制器DFB激光二极管的15GHz小信号调制带宽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE 18th International Semiconductor Laser Conference

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