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IEEE 18th International Semiconductor Laser Conference最新文献

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Novel InP-based Mach-Zehnder modulator for 40 Gb/s integrated lightwave source 40gb /s集成光源的新型inp Mach-Zehnder调制器
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041116
S. Akiyama, S. Hirose, T. Watanabe, M. Ueda, S. Sekiguchi, N. Morii, T. Yamamoto, A. Kuramata, H. Soda
{"title":"Novel InP-based Mach-Zehnder modulator for 40 Gb/s integrated lightwave source","authors":"S. Akiyama, S. Hirose, T. Watanabe, M. Ueda, S. Sekiguchi, N. Morii, T. Yamamoto, A. Kuramata, H. Soda","doi":"10.1109/ISLC.2002.1041116","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041116","url":null,"abstract":"A novel InP-based Mach-Zehnder modulator, which provides impedance matching to 50 ohm, is proposed for 40 Gb/s integrated lightwave source. Its 40 Gb/s operation is successfully demonstrated.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123014074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
A comparison of the thermal stability of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 /spl mu/m operation InGaAsP、AlGaInAs和GaInNAs量子阱激光器在1.3 /spl mu/m下的热稳定性比较
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041109
S. Sweeney, S. R. Jin, R. Fehse, A. Adams, T. Higashi, H. Riechert, P.J.A. Tbijs
{"title":"A comparison of the thermal stability of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 /spl mu/m operation","authors":"S. Sweeney, S. R. Jin, R. Fehse, A. Adams, T. Higashi, H. Riechert, P.J.A. Tbijs","doi":"10.1109/ISLC.2002.1041109","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041109","url":null,"abstract":"We present the measured temperature dependence of InGaAsP, AlGaInAs, and GaInNAs-based QW lasers and discuss J/sub th/ and T/sub o/ in terms of the dominant recombination paths.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124607091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Simulation and design of pump laser diodes for un-cooled applications 非制冷泵浦激光二极管的仿真与设计
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041165
B. Schmidt, T. Pliška, N. Matuschek, R. Badii, S. Mohrdiek, T. Kellner, S. Pawlik, J. Muller, B. Sverdlov, A. Witzig, M. Pfeiffer
{"title":"Simulation and design of pump laser diodes for un-cooled applications","authors":"B. Schmidt, T. Pliška, N. Matuschek, R. Badii, S. Mohrdiek, T. Kellner, S. Pawlik, J. Muller, B. Sverdlov, A. Witzig, M. Pfeiffer","doi":"10.1109/ISLC.2002.1041165","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041165","url":null,"abstract":"To enable stable pump module operation at increased temperatures we have optimized our latest pump laser generation using multi-dimensional simulation tools. Poisson's equation, carrier continuity equations, and heat transport are solved self-consistently with the optical modes and the quantum-well carrier dynamics.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124641664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication of Michelson interferometer-type wavelength converter integrated with multi-mode interference coupler (MIWC-MMIC) 集成多模干涉耦合器的迈克尔逊干涉仪型波长转换器(MIWC-MMIC)的研制
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041146
K. Yoshioka, K. Uchida, A. Matsumoto, K. Utaka
{"title":"Fabrication of Michelson interferometer-type wavelength converter integrated with multi-mode interference coupler (MIWC-MMIC)","authors":"K. Yoshioka, K. Uchida, A. Matsumoto, K. Utaka","doi":"10.1109/ISLC.2002.1041146","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041146","url":null,"abstract":"We developed a Michelson interferometer-type wavelength converter utilizing cross-gain modulation of SOAs integrated with a multi-mode interference coupler (MMIC), for the first time. This device is interesting in terms of compactness, which seems essential for multi-channel photonic systems. Fabrication and fundamental wavelength convertor operation are exhibited.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127982757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Over 27 nm tuning range by mode locking of external cavity laser including a linearly chirped fiber Bragg grating 采用线性啁啾光纤布拉格光栅的外腔激光器锁模调谐范围超过27nm
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041115
A. Bergonzo, J. David, J. Landreau, E. Gohin, R. Brenot, O. Durand, G. Duan, J. Jacquet
{"title":"Over 27 nm tuning range by mode locking of external cavity laser including a linearly chirped fiber Bragg grating","authors":"A. Bergonzo, J. David, J. Landreau, E. Gohin, R. Brenot, O. Durand, G. Duan, J. Jacquet","doi":"10.1109/ISLC.2002.1041115","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041115","url":null,"abstract":"27 nm electrical wavelength tuning of external cavity laser with linearly chirped fiber Bragg grating (LCFBG) has been demonstrated. Wavelength tuning has been achieved by changing the modulation frequency around 2.1 GHz.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133793829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Single-lobe, orthonormal-beam surface emission from 2nd-order DFB/DBR lasers with half-wave grating phase shift 半波光栅相移二阶DFB/DBR激光器的单瓣、正交光束表面发射
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041168
G. Witjaksono, S. Li, D. Botez
{"title":"Single-lobe, orthonormal-beam surface emission from 2nd-order DFB/DBR lasers with half-wave grating phase shift","authors":"G. Witjaksono, S. Li, D. Botez","doi":"10.1109/ISLC.2002.1041168","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041168","url":null,"abstract":"The use of a 180/spl deg/ (central) grating phase shift has allowed single-mode surface emission in a single-lobe, orthonormal beam pattern from 2nd-order DFB/DBR InGaAs/AlGaAs DQW lasers.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128201081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis and optimization of high-power GaN lasers 高功率GaN激光器的分析与优化
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041131
J. Piprek, S. Nakamura
{"title":"Analysis and optimization of high-power GaN lasers","authors":"J. Piprek, S. Nakamura","doi":"10.1109/ISLC.2002.1041131","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041131","url":null,"abstract":"Summary form only given. 400 nm Fabry-Perot laser diodes are investigated that exhibit the highest output power measured thus far (420 mW). The active region includes two InGaN quantum wells, an AlGaN electron stopper layer, GaN waveguide layers, and superlattice cladding layers. Advanced laser simulation is used to analyze internal physical processes, to reveal performance limitations, and to explore optimization options. The laser model self-consistently combines 6x6 k.p band structure and gain calculations with two-dimensional simulations of wave guiding, carrier transport, and heat flux.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131668781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recent progress in high-power blue-violet lasers 高功率蓝紫色激光器的最新进展
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041091
S. Uchida, M. Takeya, S. Ikeda, T. Mizuno, T. Fujimoto, O. Matsumoto, S. Goto, T. Tojyo, M. Ikeda
{"title":"Recent progress in high-power blue-violet lasers","authors":"S. Uchida, M. Takeya, S. Ikeda, T. Mizuno, T. Fujimoto, O. Matsumoto, S. Goto, T. Tojyo, M. Ikeda","doi":"10.1109/ISLC.2002.1041091","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041091","url":null,"abstract":"GaN-based 400-nm high-power lasers have been developed as a light source for optical disk recording, laser printer, and displays. The lasers in systems for optical disks with capacities greater than 50 GB are required to operate at high output power exceeding 100 mW in order to write information to a dual-layer disk. To satisfy this performance requirement, we examined the absorption loss in Mg-doped GaN super-lattice layers, and successfully reduced the internal loss by isolating these layers from the active layer.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134436514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 68
Reliable high temperature (70C) high brightness Al-free 980 nm broad area lasers with nonabsorbing mirrors 可靠的高温(70℃)高亮度无铝980 nm广域激光器，无吸收镜
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041126
M. Kanskar, S. Meassick, T. Earles
{"title":"Reliable high temperature (70C) high brightness Al-free 980 nm broad area lasers with nonabsorbing mirrors","authors":"M. Kanskar, S. Meassick, T. Earles","doi":"10.1109/ISLC.2002.1041126","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041126","url":null,"abstract":"We report on the successful demonstration of nonabsorbing mirrors in Al-free broad area lasers with reliable operation at 2W and a 70C heatsink temperature. We have used a quantum-well intermixing technique to create nonabsorbing mirrors (NAM) in Al-free broad area lasers. We have life-tested these devices at 2W and a 70C heat sink temperature with virtually no degradation over 2000 hours.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122613461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Long wavelength GaInNAs(Sb) lasers grown by MBE MBE生长的长波GaInNAs(Sb)激光器
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041106
W. Ha, V. Gambin, S. Bank, M. Wistey, H. Yuen, S. Kim, J. Harris
{"title":"Long wavelength GaInNAs(Sb) lasers grown by MBE","authors":"W. Ha, V. Gambin, S. Bank, M. Wistey, H. Yuen, S. Kim, J. Harris","doi":"10.1109/ISLC.2002.1041106","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041106","url":null,"abstract":"Summary form only given. We present new structures utilizing GaNAs barriers and a new quantum well material, GaInNAsSb, to achieve post-annealed, long wavelength optical emission. The structures with N in the barriers reduce the blue-shift of luminescence by suppressing N out-diffusion from the QWs and decreasing carrier confinement between the barriers and QWs. We utilize Sb, both incorporated into the crystal and used as a surfactant, to enable higher indium incorporation. GaNAs or GaNAsSb barriers also reduce the overall strain of the active region because the high indium mole fraction QWs are compressively strained and the GaNAs(Sb) barriers are tensely strained. With GaNAs barriers, we were able to grow a 9 QW GaInNAs sample. This type of multiple QW structure is particularly applicable to high power lasers that require large volumes of gain medium.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117271001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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