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Surface-emitting semiconductor lasers with multi-functional grating couplers 具有多功能光栅耦合器的表面发射半导体激光器
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041127
P. Modh, J. Backlund, J. Bengtsson, A. Larsson
{"title":"Surface-emitting semiconductor lasers with multi-functional grating couplers","authors":"P. Modh, J. Backlund, J. Bengtsson, A. Larsson","doi":"10.1109/ISLC.2002.1041127","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041127","url":null,"abstract":"We report considerable improvements in the beam quality of an unstable-resonator laser integrated with two different outcouplers designed using this new principle. In the first example, the coupler is designed for harmless feedback characteristics while producing four focused spots in free space, and in the second example, the coupler provides the feedback needed for the desired mode of operation of the laser (eliminating one of the feedback gratings) while simultaneously producing a focused spot in free space.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"256 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115276903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Yellow-green lasing emission from ZnCdSe/BeZnTe II-VI laser diodes on InP substrates InP衬底上ZnCdSe/BeZnTe II-VI激光二极管的黄绿色激光发射
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041148
S. Che, I. Nomura, A. Kikuchi, K. Kishino
{"title":"Yellow-green lasing emission from ZnCdSe/BeZnTe II-VI laser diodes on InP substrates","authors":"S. Che, I. Nomura, A. Kikuchi, K. Kishino","doi":"10.1109/ISLC.2002.1041148","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041148","url":null,"abstract":"In this study, ZnCdSe-based II-VI LDs were fabricated on S-doped [100] oriented InP substrates with InGaAs buffer layers by molecular beam epitaxy, demonstrating the first successful lasing operation. The lasing wavelength was around 560 nm. Lattice matched ZnCdSe single quantum wells with 10 nm in thickness were employed as active region.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115324974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of growth conditions on the optical gain of 1.3 /spl mu/m (GaIn)(NAs)/GaAs lasers 生长条件对1.3 /spl mu/m (gain)(NAs)/GaAs激光器光学增益的影响
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041130
N. Gerhardt, M. Hofmann, K. Handtke, W. Stolz, S. W. Koch, J. Hader, J. Moloney, A. Egorov, H. Riechert
{"title":"Influence of growth conditions on the optical gain of 1.3 /spl mu/m (GaIn)(NAs)/GaAs lasers","authors":"N. Gerhardt, M. Hofmann, K. Handtke, W. Stolz, S. W. Koch, J. Hader, J. Moloney, A. Egorov, H. Riechert","doi":"10.1109/ISLC.2002.1041130","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041130","url":null,"abstract":"We investigate the optical gain of GaInNAs/GaAs laser structures and demonstrate that the gain critically depends on the growth conditions. This observation rises the possibility to tailor the optical properties of GaInNAs/GaAs lasers by the growth conditions or even by subsequent annealing procedures without changing the nominal material composition.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123705937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-sustained Q-switching in InGaAs quantum dot lasers InGaAs量子点激光器中的自持续q开关
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041125
D. Matthews, H. Summers, P. Smowton, M. Hopkinson
{"title":"Self-sustained Q-switching in InGaAs quantum dot lasers","authors":"D. Matthews, H. Summers, P. Smowton, M. Hopkinson","doi":"10.1109/ISLC.2002.1041125","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041125","url":null,"abstract":"We investigate the performance of wide-band InGaAs quantum dot lasers operated in a passively Q-switched mode via the use of saturable absorber sections. The pulse characteristics are strongly influenced by the degree of dot coupling due to carrier transfer via the wetting layer reservoir. If this inter-dot interaction is removed Q-switching can no longer be achieved.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122069830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The temperature and pressure dependence of 1.3 /spl mu/m GaInNAs vertical-cavity surface-emitting lasers (VCSELs) 1.3 /spl mu/m GaInNAs垂直腔面发射激光器(VCSELs)的温度和压力依赖性
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041155
G. Knowles, R. Fehsel, S. Tomić, S. Sweeney, T. Sale, A. Adams, E. O’Reilly, G. Steinle, H. Riechert
{"title":"The temperature and pressure dependence of 1.3 /spl mu/m GaInNAs vertical-cavity surface-emitting lasers (VCSELs)","authors":"G. Knowles, R. Fehsel, S. Tomić, S. Sweeney, T. Sale, A. Adams, E. O’Reilly, G. Steinle, H. Riechert","doi":"10.1109/ISLC.2002.1041155","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041155","url":null,"abstract":"We have modelled the temperature and pressure dependence of the threshold current of GaInNAs-based VCSELs and compared the results with measured data.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130533036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bottom emitting 1.3 /spl mu/m BH-FP laser with integrated 45/spl deg/ reflector and monitor photodiode 底部发射1.3 /spl mu/m BH-FP激光器，集成45/spl度反射器和监控光电二极管
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041143
K. Janiak, P. Albrecht, S. Fidorra, H. Heidrich, W. Rehbein, H. Roehle, H. Althaus
{"title":"Bottom emitting 1.3 /spl mu/m BH-FP laser with integrated 45/spl deg/ reflector and monitor photodiode","authors":"K. Janiak, P. Albrecht, S. Fidorra, H. Heidrich, W. Rehbein, H. Roehle, H. Althaus","doi":"10.1109/ISLC.2002.1041143","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041143","url":null,"abstract":"We realized for the first time by a complete monolithic integration a bottom emitting laser OEIC including laser, monitor photodiode, and prism for SMT-packaging. This approach with the fabrication of the laser and reflection mirrors in full wafer technology exploits additionally the cost efficient advantages of on wafer facet preparation and on-wafer characterization.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"44 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120902851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
MOVPE-grown 1.3 /spl mu/m emitting VCSEL with GaInNAs active region movpe生长1.3 /spl mu/m，发射具有GaInNAs活性区的VCSEL
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041153
A. Ramakrishnan, G. Steinle, D. Supper, J. Pfeiffer, C. Degen, W. Stolz
{"title":"MOVPE-grown 1.3 /spl mu/m emitting VCSEL with GaInNAs active region","authors":"A. Ramakrishnan, G. Steinle, D. Supper, J. Pfeiffer, C. Degen, W. Stolz","doi":"10.1109/ISLC.2002.1041153","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041153","url":null,"abstract":"An MOVPE-grown VCSEL on GaAs substrate with a GaInNAs active region emitting at 1.3 /spl mu/m with record laser-characteristics and data-transmission rate of 10 Gbit/s has been realized.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131148733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Novel optical feedback scheme for the improvement of the wavelength switching behaviour of tunable lasers 一种改善可调谐激光器波长开关性能的新型光反馈方案
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041133
B. Moeyersoon, G. Morthier, R. Baets
{"title":"Novel optical feedback scheme for the improvement of the wavelength switching behaviour of tunable lasers","authors":"B. Moeyersoon, G. Morthier, R. Baets","doi":"10.1109/ISLC.2002.1041133","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041133","url":null,"abstract":"We show numerically that thermally induced wavelength drift of a tunable DBR laser diode can be suppressed using a simple optical feedback loop containing a comb filter.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114617476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High-temperature operation and thermal analysis of InGaAlP-based oxide-confined red VCSELs ingaalp基氧化物约束红色vcsel的高温运行和热分析
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041134
K. Takaoka, M. Ezaki, M. Nishigaki, G. Hatakoshi
{"title":"High-temperature operation and thermal analysis of InGaAlP-based oxide-confined red VCSELs","authors":"K. Takaoka, M. Ezaki, M. Nishigaki, G. Hatakoshi","doi":"10.1109/ISLC.2002.1041134","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041134","url":null,"abstract":"We successfully fabricated high-performance oxide-confined red VCSELs. A low threshold current of 0.5 mA and an extremely high maximum CW lasing temperature of 75C were achieved with a room-temperature lasing wavelength of 666 nm. This low-threshold and high-temperature operation was realized, because the oxide-confined structure is advantageous for making smaller devices, compared to the proton-implanted structure.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130333334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Tailorable chirp using integrated Mach-Zehnder modulators with tunable sampled grating distributed Bragg reflector lasers 可定制的啁啾使用集成马赫-曾德尔调制器与可调谐采样光栅分布布拉格反射激光器
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041112
J. Barton, E. Skogen, M. Mašanović, S. Denbaars, L. Coldren
{"title":"Tailorable chirp using integrated Mach-Zehnder modulators with tunable sampled grating distributed Bragg reflector lasers","authors":"J. Barton, E. Skogen, M. Mašanović, S. Denbaars, L. Coldren","doi":"10.1109/ISLC.2002.1041112","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041112","url":null,"abstract":"The first Mach-Zehnder modulator integrated with a sampled-grating distributed-Bragg-reflector laser is demonstrated exhibiting DC extinction of greater than 18 dB with 2 V.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132508403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
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