InGaAs量子点激光器中的自持续q开关

D. Matthews, H. Summers, P. Smowton, M. Hopkinson
{"title":"InGaAs量子点激光器中的自持续q开关","authors":"D. Matthews, H. Summers, P. Smowton, M. Hopkinson","doi":"10.1109/ISLC.2002.1041125","DOIUrl":null,"url":null,"abstract":"We investigate the performance of wide-band InGaAs quantum dot lasers operated in a passively Q-switched mode via the use of saturable absorber sections. The pulse characteristics are strongly influenced by the degree of dot coupling due to carrier transfer via the wetting layer reservoir. If this inter-dot interaction is removed Q-switching can no longer be achieved.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Self-sustained Q-switching in InGaAs quantum dot lasers\",\"authors\":\"D. Matthews, H. Summers, P. Smowton, M. Hopkinson\",\"doi\":\"10.1109/ISLC.2002.1041125\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigate the performance of wide-band InGaAs quantum dot lasers operated in a passively Q-switched mode via the use of saturable absorber sections. The pulse characteristics are strongly influenced by the degree of dot coupling due to carrier transfer via the wetting layer reservoir. If this inter-dot interaction is removed Q-switching can no longer be achieved.\",\"PeriodicalId\":179103,\"journal\":{\"name\":\"IEEE 18th International Semiconductor Laser Conference\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 18th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2002.1041125\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 18th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2002.1041125","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

我们研究了宽带InGaAs量子点激光器在被动调q模式下的性能。由于载流子通过润湿层储层传输而产生的点耦合程度对脉冲特性有很大影响。如果这种点间的相互作用被去除,q开关就不能再实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Self-sustained Q-switching in InGaAs quantum dot lasers
We investigate the performance of wide-band InGaAs quantum dot lasers operated in a passively Q-switched mode via the use of saturable absorber sections. The pulse characteristics are strongly influenced by the degree of dot coupling due to carrier transfer via the wetting layer reservoir. If this inter-dot interaction is removed Q-switching can no longer be achieved.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信