{"title":"InGaAs量子点激光器中的自持续q开关","authors":"D. Matthews, H. Summers, P. Smowton, M. Hopkinson","doi":"10.1109/ISLC.2002.1041125","DOIUrl":null,"url":null,"abstract":"We investigate the performance of wide-band InGaAs quantum dot lasers operated in a passively Q-switched mode via the use of saturable absorber sections. The pulse characteristics are strongly influenced by the degree of dot coupling due to carrier transfer via the wetting layer reservoir. If this inter-dot interaction is removed Q-switching can no longer be achieved.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Self-sustained Q-switching in InGaAs quantum dot lasers\",\"authors\":\"D. Matthews, H. Summers, P. Smowton, M. Hopkinson\",\"doi\":\"10.1109/ISLC.2002.1041125\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigate the performance of wide-band InGaAs quantum dot lasers operated in a passively Q-switched mode via the use of saturable absorber sections. The pulse characteristics are strongly influenced by the degree of dot coupling due to carrier transfer via the wetting layer reservoir. If this inter-dot interaction is removed Q-switching can no longer be achieved.\",\"PeriodicalId\":179103,\"journal\":{\"name\":\"IEEE 18th International Semiconductor Laser Conference\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 18th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2002.1041125\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 18th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2002.1041125","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Self-sustained Q-switching in InGaAs quantum dot lasers
We investigate the performance of wide-band InGaAs quantum dot lasers operated in a passively Q-switched mode via the use of saturable absorber sections. The pulse characteristics are strongly influenced by the degree of dot coupling due to carrier transfer via the wetting layer reservoir. If this inter-dot interaction is removed Q-switching can no longer be achieved.