IEEE 18th International Semiconductor Laser Conference最新文献

{"title":"Gain, loss and /spl alpha/-factor in 2.5-/spl mu/m In(Al)GaAsSb/GaSb Type-I QW lasers with 1W CW output power","authors":"G. Belenky, J.G. Kim, L. Shterengas, R. Martinelli, D. Garbuzov","doi":"10.1109/ISLC.2002.1041142","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041142","url":null,"abstract":"1W CW operation of 2.5-/spl mu/m type-I DQW In(Al)GaAsSb/GaSb lasers is demonstrated. Results of the direct measurements of the gain, loss and /spl alpha/-factor are presented and discussed.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130780915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Use of post-growth control of the quantum-well band edge for optimized widely-tunable laser-x devices","authors":"E. Skogen, J. Barton, M. Mašanović, J. Getty, S. Denbaars, L. Coldren","doi":"10.1109/ISLC.2002.1041114","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041114","url":null,"abstract":"Quantum-well intermixing was used to fabricate widely-tunable multi-section MQW lasers with integrated electro-absorption device. We present the DC extinction characteristics of the intermixed material over several wavelengths.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131320484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High performance 1300-nm dilute-nitride quantum well lasers by MOCVD","authors":"N. Tansu, L. Mawst","doi":"10.1109/ISLC.2002.1041104","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041104","url":null,"abstract":"InGaAsN QW active lasers have shown promise as the material of choice for the active region of 1300-nm GaAs-based VCSELs. One of the challenges of growing InGaAsN QW lasers by MOCVD is due to the difficulties in incorporating N into the InGaAs QW, while maintaining a high optical quality film. The low purity of the N-precursor used in MOCVD (U-Dimethylhydrazine) is suspected as a possible reason for the low optical quality of MOCVD-grown InGaAsN QWs. In our approach, U-Dimethylhydrazine and AsH/sub 3/ are utilized in the growth of our InGaAsN QW.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122934142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent progress on quantum cascade lasers","authors":"C. Sirtori","doi":"10.1109/ISLC.2002.1041090","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041090","url":null,"abstract":"Quantum cascade lasers provide coherent radiation in a very wide spectral range, from 4 to 70 /spl mu/m. Performances and applications will be presented and discussed. In these structures, the transition energies, as well as the dipole matrix element and the scattering time can be tailored and optimised by a judicious combination of ultra-thin layers of semiconductor compounds. This approach is the basis for modifying in a unique way the optical and the transport properties of semiconductors, opening avenues for the conception and realisation of artificial materials and useful devices.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116893896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Micro-electro-mechanical tunable vertical cavity surface emitting lasers using metal flexures and a top dielectric stack distributed Bragg reflector","authors":"M. Harvey, J. A. Lott, T. Nelson, A. Stintz, K. Malloy","doi":"10.1109/ISLC.2002.1041094","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041094","url":null,"abstract":"Summary form only given. In this study we design, fabricate, and characterize tunable \"membrane\" VCSELs using novel micro-electro-mechanical systems (MEMS) piston micromirror designs that include metal or hybrid metal/dielectric top flexures. The device structures start as conventional 980 nm resonant cavity light-emitting diodes (RCLEDs) with selectively oxidized AlGaO current apertures. We use a photosensitive spin-on polymer (polymethylglutarimide - PMGI) material as the sacrificial material between the RCLED and the upper flexure. Up to seven photolithographic mask steps are used to define/create mesas.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128945214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unidirectionality of semiconductor ring lasers: theory and experiment","authors":"S. Cho, Rajeev J Ram","doi":"10.1109/ISLC.2002.1041122","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041122","url":null,"abstract":"Integrated semiconductor ring lasers are designed to achieve unidirectional operation with S-crossover waveguides or retro-reflectors. Greater than 20dB unidirectionality is demonstrated both theoretically and experimentally.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"40 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129105471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spectral linewidth re-broadening and photon density distribution in 1550nm high power CW-DFB lasers","authors":"K. Takaki, T. Kise, K. Maruyama, N. Yamanaka, M. Funabashi, A. Kasukawa","doi":"10.1109/ISLC.2002.1041100","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041100","url":null,"abstract":"First investigation on spectral linewidth re-broadening due to photon density distribution has yielded optimized high-power (225mW) CW-DFB MQW lasers with very narrow linewidth (0.7MHz at 100mW).","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125872759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Very low threshold current density of 13 /spl mu/m-range GaInNAsSb/GaNAs 5QWs lasers","authors":"C. Setiagung, H. Shimizu, K. Kumada, A. Kasukawa","doi":"10.1109/ISLC.2002.1041107","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041107","url":null,"abstract":"1.3 /spl mu/m-range GaInNAs-based strain-compensated 5QWs lasers were successfully grown for the first time. The lasers oscillated under pulsed operation at 1.282 /spl mu/m at room temperature with the very low threshold current density per well of 160 A/cm/sup 2/ at 900 /spl mu/m-long cavity.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125256193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analog modulation dypamic range enhancement using injection-locked 1.55 /spl mu/m VCSELs","authors":"C. Chang, L. Chrostowski, C. Chang-Hasnain","doi":"10.1109/ISLC.2002.1041145","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041145","url":null,"abstract":"Injection locking is shown lo improve the analog perfomdnce of 1.55pm VCSELs. The 3” harmonic spur-Sree dyndmic range improvement is studied for difl‘erent injection conditions. Introduction Injection locking oi semiconductor lasers has recently been actively investigated [ I .2]. Although there have been many theoretical predictions of performance improvements, the experimental verifications are limited. In this paper, we demonstrate that the injection-locking technique can be used to enhance the analog modulation performance of 1 5 5 pm VCSELs. A 21 dBIHz’’ improvement in spur free dynamic range (SFDR) for 3‘‘ harmonic distortion (from 75 to 96 dR/Hz”) was achie.ed. This is the highest 3‘’ harmonic SFDK for 1 5 5 um VCSELs reported. We also achieved a factor of 2 enhancement off , with a very flat modulation response below f,. Background In analog systems, an important figure-of-merit is the spur free dynamic range (SFDR), defined as dynamic range at the point when the system noise floor equals the distortion noise. ‘The distortion physicall) originates from the nonlinear characteristics of the laser. including nonlinearity of the light-current (LI) curve, the camer-photon interaction or from spatial hole-hurning ‘The highest reported 1MD3 SFDR for a 1.3 um DFB laser is 100 dB/Hz” tor frequencies below I GHz [3], while the highest 1 .55 um VCSEL SFDR for 3Id harmonics is only R I dB/llz” at I GHz [4]. Injection locking has been used tu improve SFDR of a 1.5 pm DFB Inser. A 5 dUIHz” improvement in SFDR was reported leading to a 100 dB/HzZ3 SFDR at 2.0 GHz [SI. Experimental Results Experiments were performed using W O diffrrcnt tunable VCSEL devices, whose device details can be found in [6]. The experimental setup is shown in Figure I . Figure la shows typical optical spectra of the free-running and injection-locked VCSEL, showing the VCSEL spectrum shifting to lock to the DFR wavelength. To achieve the locking conditions, the VCSEL Has electrostatically tuned while the DFB temperature was adjusted to vary the Wavelength detuning. The DFB power was adjusted by varying the DC bias. The locking phenomenon typically occurs between 0 and -0.3 nin detuning, while the analog improvement is typically observed in a smaller range (-0.05 nm detuning). Figure 2b shows the frequency response of the 1555.3 nm VCSEL as melrsured by a network analyzer, with a -30 dBm input signal. The free-running VCSEL 3dB bandwidth is 2.7 GHz and increases to 5.0 GHz for the injection locking case. This is nearly a 2x improvement in relaxation oscillation peak by injection locking. Also. the RF gain at the fundamental frequency of I .O GHz increases by -3 dB. Figure 3 shows Sindamental and third harmonic power vs. RF input power for the I 53R.4 nm VCSEL under free-running and injection-locking conditions. The slave VCSEL was modulated by a single-tone camer at I Cillz. The incident DFB power was -4 dBm and the DFB detuning was +0.24 nm. The VCSEL was operated at a bias curren","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133382285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"InAs-quantum-dots-based light emitting diodes with GaNAs strain-compensating layers","authors":"M. Kurimoto, S. Ganapathy, X.Q. Zhang, K. Uesugi, H. Kumano, I. Suemune","doi":"10.1109/ISLC.2002.1041161","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041161","url":null,"abstract":"GaNAs strain compensating layers have been used to obtain 1.5 /spl mu/m luminescence from InAs quantum dots, and this fundamental scheme was demonstrated with light emitting diodes operating at room temperature.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"33 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113970448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}