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IEEE 18th International Semiconductor Laser Conference最新文献

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InGaN MQW laser diode with integrated intracavity electroabsorption modulator 集成腔内电吸收调制器的MQW激光二极管
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041149
M. Kneissl, T. Paoli, P. Kiesel, D. W. Treat, M. Teepe, N. Miyashita, N. Johnson
{"title":"InGaN MQW laser diode with integrated intracavity electroabsorption modulator","authors":"M. Kneissl, T. Paoli, P. Kiesel, D. W. Treat, M. Teepe, N. Miyashita, N. Johnson","doi":"10.1109/ISLC.2002.1041149","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041149","url":null,"abstract":"Summary form only given. We demonstrate a two-section InGaN multiple-quantum-well (MQW) laser diode comprised of an amplifier section and a monolithically integrated electroabsorption (EA) modulator. Modulator and gain sections are electrically separated by a narrow dry etched trench, but are optically coupled and share the same InGaN MQW active region. The basic concept of the device is to utilize the strong built-in piezoelectric fields in the InGaN MQW active region to achieve the necessary wavelength offset between the emission wavelength of the amplifier section and the absorption edge of the EA modulator.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121105179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Narrow stripe distributed reflector lasers with first-order vertical grating 一阶垂直光栅窄条纹分布反射器激光器
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041098
Hyo-Chang Kim, H. Kanjo, S. Tamura, S. Arai
{"title":"Narrow stripe distributed reflector lasers with first-order vertical grating","authors":"Hyo-Chang Kim, H. Kanjo, S. Tamura, S. Arai","doi":"10.1109/ISLC.2002.1041098","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041098","url":null,"abstract":"Summary form only given. We realized 1.3 /spl mu/m-wide mesa stripe GaInAsP/InP distributed reflector semiconductor lasers consisting of first-order vertical grating DFB and first-order deeply etched DBR, and obtained a threshold current of 3.6mA for the active region length of 21/spl mu/m.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125033858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High-power, widely-tunable sampled grating DBR laser integrated with a semiconductor optical amplifier 集成半导体光放大器的大功率、宽调谐采样光栅DBR激光器
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041110
T. Liijeberg, R. Tohmon, E. Hall, P. Abraham, M. Focht, G. Fish, M. Larson, L. Coldren
{"title":"High-power, widely-tunable sampled grating DBR laser integrated with a semiconductor optical amplifier","authors":"T. Liijeberg, R. Tohmon, E. Hall, P. Abraham, M. Focht, G. Fish, M. Larson, L. Coldren","doi":"10.1109/ISLC.2002.1041110","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041110","url":null,"abstract":"We have demonstrated a high-power widely tunable SG-DBR semiconductor laser monolithically integrated with a SOA. Chip power in excess of 55 mW and SMSR > 40 dB across a 40 nm tuning range have been achieved. Over 13 dBm fiber-coupled power was demonstrated across 85 50-GHz ITU L-band channels.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116831556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
The physics of heat transport in semiconductor lasers 半导体激光器中的热输运物理学
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041140
K. Pipe, Rajeev J Ram, A. Shakouri
{"title":"The physics of heat transport in semiconductor lasers","authors":"K. Pipe, Rajeev J Ram, A. Shakouri","doi":"10.1109/ISLC.2002.1041140","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041140","url":null,"abstract":"A first study of thermoelectric and convective effects in lasers is given in addition to Joule and recombination heating. Optimized devices and thermal measurements verifying the theory are presented.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121594289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Absence of filamentation in quantum-dot lasers. Theory and experiment 量子点激光器中没有灯丝。理论与实验
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041160
W. Chow, H. Schneider, E. J. Pearce, P. Smowton
{"title":"Absence of filamentation in quantum-dot lasers. Theory and experiment","authors":"W. Chow, H. Schneider, E. J. Pearce, P. Smowton","doi":"10.1109/ISLC.2002.1041160","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041160","url":null,"abstract":"We theoretically and experimentally investigate the lateral mode behavior of quantum-dot lasers, and demonstrate the absence of filamentation up to 10/spl times/ threshold. The negative linewidth enhancement factor necessary for filamentation in highly-excited quantum dot lasers originates from the Coulomb coupling between quantum-dot and quantum-well states.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129043419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High brightness tapered lasers at 732 nm and 975 nm: experiments and numerical analysis 732 nm和975 nm高亮度锥形激光器:实验和数值分析
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041132
L. Borruel, S. Sujecki, S. Auzanneau, B. Sumpf, P. Moreno, J. Wykes, M. Krakowski, G. Erbert, D. Rodríguez, P. Sewell, M. Calligaro, H. Wenzel, T. Benson, E. Larkins, I. Esquivias
{"title":"High brightness tapered lasers at 732 nm and 975 nm: experiments and numerical analysis","authors":"L. Borruel, S. Sujecki, S. Auzanneau, B. Sumpf, P. Moreno, J. Wykes, M. Krakowski, G. Erbert, D. Rodríguez, P. Sewell, M. Calligaro, H. Wenzel, T. Benson, E. Larkins, I. Esquivias","doi":"10.1109/ISLC.2002.1041132","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041132","url":null,"abstract":"The 732 nm laser structure consists of a tensile strained GaAsP QW with AlGaAs confinement and cladding regions. The 975 nm structure comprises a strained InGaAs QW embedded in an Al-free optical cavity Both designs employ a large optical cavity to reduce the fast axis divergence and to decrease the tendency to filamentation, with similar values for the vertical confinement factor.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"407 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132649625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Design and realization of high-power distributed-feedback lasers emitting at 860 nm 860nm高功率分布式反馈激光器的设计与实现
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041170
H. Wenzel, M. Braun, J. Fricke, A. Klehr, A. Knauer, P. Ressel, G. Erbert, G. Trankle
{"title":"Design and realization of high-power distributed-feedback lasers emitting at 860 nm","authors":"H. Wenzel, M. Braun, J. Fricke, A. Klehr, A. Knauer, P. Ressel, G. Erbert, G. Trankle","doi":"10.1109/ISLC.2002.1041170","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041170","url":null,"abstract":"Summary form only given. AlGaAs/InGaAsP ridge-waveguide distributed-feedback lasers emitting at 860 nm a continuous-wave output power of more than 400 mW at 25/spl deg/C are reported.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121149688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Beam quality and linewidth enhancement factor of ridge-waveguide tapered diode lasers 脊波导锥形二极管激光器的光束质量和线宽增强系数
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041128
M. Kelemen, J. Weber, J. Rogg, F. Rinner, M. Mikulla, G. Weimann
{"title":"Beam quality and linewidth enhancement factor of ridge-waveguide tapered diode lasers","authors":"M. Kelemen, J. Weber, J. Rogg, F. Rinner, M. Mikulla, G. Weimann","doi":"10.1109/ISLC.2002.1041128","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041128","url":null,"abstract":"Summary form only given. In order to optimize the brightness of these diode lasers, the dependence of the linewidth enhancement factor and of the beam quality on the device structure parameters was investigated. The active In/sub 0.12/Ga/sub 0.88/As quantum well with a thickness of 7 nm is embedded in Al/sub 0.2/Ga/sub 0.8/As waveguides and Al/sub 0.4/Ga/sub 0.6/As cladding layers.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116603014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Design of DWDM laser arrays based on sampled grating DFB lasers 基于采样光栅DFB激光器的DWDM激光器阵列设计
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041124
San-Liang Lee, Ing-Fa Jang
{"title":"Design of DWDM laser arrays based on sampled grating DFB lasers","authors":"San-Liang Lee, Ing-Fa Jang","doi":"10.1109/ISLC.2002.1041124","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041124","url":null,"abstract":"This paper presents a study on sampled grating DFB semiconductor laser array design for application as dense WDM transmitters.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114608307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Stimulated emission at 1.54 /spl mu/m in GaAs:Er,O and issues of the laser action GaAs:Er,O中1.54 /spl mu/m的受激辐射及激光作用问题
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041139
P. Eliseev, S.V. Gastev, Y. Fijiwara, A. Koizumi, Y. Takeda
{"title":"Stimulated emission at 1.54 /spl mu/m in GaAs:Er,O and issues of the laser action","authors":"P. Eliseev, S.V. Gastev, Y. Fijiwara, A. Koizumi, Y. Takeda","doi":"10.1109/ISLC.2002.1041139","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041139","url":null,"abstract":"We see that the laser application of Er-doped GaAs is not easy. If the laser is possible it will be a low-threshold laser because the pumping rate to saturate the Er population is rather low. However along with a temperature rise, the luminescence is quenched substantially. The increase of the linewidth will give the reduction of the room-temperature peak gain more than 75 times as compared with 4.2 K. Therefore the gain achievable in single crystal Er-doped GaAs seems to be not sufficient for the room-temperature laser action.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128703278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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